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Introduction to CMOS VLSI Design Lecture 4: DC & Transient ResponsePowerPoint Presentation

Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response

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Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response

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Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response

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Introduction toCMOS VLSIDesignLecture 4: DC & Transient Response

Credits: David Harris

Harvey Mudd College

(Material taken/adapted from Harris’ lecture notes)

- DC Response
- Logic Levels and Noise Margins
- Transient Response
- Delay Estimation

4: DC and Transient Response

1)If the width of a transistor increases, the current will

increasedecreasenot change

2)If the length of a transistor increases, the current will

increasedecreasenot change

3)If the supply voltage of a chip increases, the maximum transistor current will

increasedecreasenot change

4)If the width of a transistor increases, its gate capacitance will

increasedecreasenot change

5)If the length of a transistor increases, its gate capacitance will

increasedecreasenot change

6)If the supply voltage of a chip increases, the gate capacitance of each transistor will

increasedecreasenot change

4: DC and Transient Response

1)If the width of a transistor increases, the current will

increasedecreasenot change

2)If the length of a transistor increases, the current will

increasedecreasenot change

3)If the supply voltage of a chip increases, the maximum transistor current will

increasedecreasenot change

4)If the width of a transistor increases, its gate capacitance will

increasedecreasenot change

5)If the length of a transistor increases, its gate capacitance will

increasedecreasenot change

6)If the supply voltage of a chip increases, the gate capacitance of each transistor will

increasedecreasenot change

4: DC and Transient Response

- DC Response: Vout vs. Vin for a gate
- Ex: Inverter
- When Vin = 0 -> Vout = VDD
- When Vin = VDD -> Vout = 0
- In between, Vout depends on
transistor size and current

- By KCL, must settle such that
Idsn = |Idsp|

- We could solve equations
- But graphical solution gives more insight

4: DC and Transient Response

- Current depends on region of transistor behavior
- For what Vin and Vout are nMOS and pMOS in
- Cutoff?
- Linear?
- Saturation?

4: DC and Transient Response

4: DC and Transient Response

4: DC and Transient Response

Vgsn = Vin

Vdsn = Vout

4: DC and Transient Response

Vgsn = Vin

Vdsn = Vout

4: DC and Transient Response

4: DC and Transient Response

4: DC and Transient Response

Vgsp = Vin - VDD

Vdsp = Vout - VDD

Vtp < 0

4: DC and Transient Response

Vgsp = Vin - VDD

Vdsp = Vout - VDD

Vtp < 0

4: DC and Transient Response

- Make pMOS is wider than nMOS such that bn = bp

4: DC and Transient Response

4: DC and Transient Response

- For a given Vin:
- Plot Idsn, Idsp vs. Vout
- Vout must be where |currents| are equal in

4: DC and Transient Response

- Vin = 0

4: DC and Transient Response

- Vin = 0.2VDD

4: DC and Transient Response

- Vin = 0.4VDD

4: DC and Transient Response

- Vin = 0.6VDD

4: DC and Transient Response

- Vin = 0.8VDD

4: DC and Transient Response

- Vin = VDD

4: DC and Transient Response

4: DC and Transient Response

- Transcribe points onto Vin vs. Vout plot

4: DC and Transient Response

- Revisit transistor operating regions

4: DC and Transient Response

- Revisit transistor operating regions

4: DC and Transient Response

- If bp / bn 1, switching point will move from VDD/2
- Called skewed gate
- Other gates: collapse into equivalent inverter

4: DC and Transient Response

- How much noise can a gate input see before it does not recognize the input?

4: DC and Transient Response

- To maximize noise margins, select logic levels at

4: DC and Transient Response

- To maximize noise margins, select logic levels at
- unity gain point of DC transfer characteristic

4: DC and Transient Response

- DC analysis tells us Vout if Vin is constant
- Transient analysis tells us Vout(t) if Vin(t) changes
- Requires solving differential equations

- Input is usually considered to be a step or ramp
- From 0 to VDD or vice versa

4: DC and Transient Response

- Ex: find step response of inverter driving load cap

4: DC and Transient Response

- Ex: find step response of inverter driving load cap

4: DC and Transient Response

- Ex: find step response of inverter driving load cap

4: DC and Transient Response

- Ex: find step response of inverter driving load cap

4: DC and Transient Response

- Ex: find step response of inverter driving load cap

4: DC and Transient Response

- Ex: find step response of inverter driving load cap

4: DC and Transient Response

- tpdr:
- tpdf:
- tpd:
- tr:
- tf: fall time

4: DC and Transient Response

- tpdr: rising propagation delay
- From input to rising output crossing VDD/2 (upper bound)

- tpdf: falling propagation delay
- From input to falling output crossing VDD/2 (upper bound)

- tpd: average propagation delay
- tpd = (tpdr + tpdf)/2

- tr: rise time
- From output crossing 0.2 VDD to 0.8 VDD

- tf: fall time
- From output crossing 0.8 VDD to 0.2 VDD

4: DC and Transient Response

- tcdr: rising contamination delay
- From input beginning to change to output beginning to rise (lower bound)

- tcdf: falling contamination delay
- From input beginning to change to output beginning to fall (lower bound)

- tcd: average contamination delay
- tpd = (tcdr + tcdf)/2

4: DC and Transient Response

- Solving differential equations by hand is too hard
- SPICE simulator solves the equations numerically
- Uses more accurate I-V models too!

- But simulations do take time to complete for large circuits

4: DC and Transient Response

- We would like to be able to easily estimate delay
- Not as accurate as simulation
- But easier to ask “What if?”

- The step response usually looks like a 1st order RC response with a decaying exponential.
- Use RC delay models to estimate delay
- C = total capacitance on output node
- Use effective resistance R
- So that tpd = RC

- Characterize transistors by finding their effective R
- Depends on average current as gate switches

4: DC and Transient Response

- Use equivalent circuits for MOS transistors
- Ideal switch + capacitance and ON resistance
- Unit nMOS has resistance R, capacitance C
- Unit pMOS has resistance 2R, capacitance C

- Capacitance proportional to width
- Resistance inversely proportional to width

4: DC and Transient Response

- Sketch a 3-input NAND with transistor widths chosen to achieve effective rise and fall resistances equal to a unit inverter (R).

4: DC and Transient Response

- Sketch a 3-input NAND with transistor widths chosen to achieve effective rise and fall resistances equal to a unit inverter (R).

4: DC and Transient Response

- Sketch a 3-input NAND with transistor widths chosen to achieve effective rise and fall resistances equal to a unit inverter (R).

4: DC and Transient Response

- Annotate the 3-input NAND gate with gate and diffusion capacitance.

4: DC and Transient Response

- Annotate the 3-input NAND gate with gate and diffusion capacitance.

4: DC and Transient Response

- Annotate the 3-input NAND gate with gate and diffusion capacitance.

4: DC and Transient Response

- ON transistors look like resistors
- Pullup or pulldown network modeled as RC ladder
- Elmore delay of RC ladder

4: DC and Transient Response

- Estimate worst-case rising and falling delay of 2-input NAND driving h identical gates.

4: DC and Transient Response

- Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

4: DC and Transient Response

- Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

4: DC and Transient Response

- Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

4: DC and Transient Response

- Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

4: DC and Transient Response

- Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

4: DC and Transient Response

- Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

4: DC and Transient Response

- Delay has two parts
- Parasitic delay
- 6 or 7 RC
- Independent of load

- Effort delay
- 4h RC
- Proportional to load capacitance

- Parasitic delay

4: DC and Transient Response

- Best-case (contamination) delay can be substantially less than propagation delay.
- Ex: If both inputs fall simultaneously

4: DC and Transient Response

- we assumed contacted diffusion on every s / d.
- Good layout minimizes diffusion area
- Ex: NAND3 layout shares one diffusion contact
- Reduces output capacitance by 2C
- Merged uncontacted diffusion might help too

4: DC and Transient Response

- Which layout is better?

4: DC and Transient Response