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High-Efficiency ‘Receiverless’ Optical Interconnects

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High-Efficiency ‘Receiverless’ Optical Interconnects. Unique features. Objective. Transmitter: Small footprint integrated laser-modulator; high- k grating; 45-degree facet for vertical; backside microlenses; quantum-well intermixing(QWI) for multiple-bandgaps

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High-Efficiency ‘Receiverless’

Optical Interconnects

Unique features

Objective

  • Transmitter: Small footprint integrated laser-modulator; high-k grating; 45-degree facet for vertical; backside microlenses; quantum-well intermixing(QWI) for multiple-bandgaps
  • Receiver: Digital receiver architecture; high-saturation power PDA photodetector design; crosstalk shielding

Develop novel, high-efficiency, high-power, and high-speed transmitter and receiver modules to minimize additional support electronics in chip-to-chip optical interconnects

Approach

Milestones—Phase I

  • Design & simulate transmitter and reciever modules
  • Refine new technologies such as QWI, 45-degree facets, microlenses, air-bridge contacts, and shielding
  • Fabricate & test device arrays
  • Provide samples to industrial collaborators.
  • Re-spin designs to respond to system’s needs; fabricate & deliver new modules
  • Design and simulate to verify power
  • budget and other aspects 6 mo.
  • Demo high-efficiency, high-power
  • laser-mod and photodetectors 15 mo.
  • Demo module arrays and deliver
  • samples 18 mo.
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Criteria/Concepts

Criteria

  • Support data rates up to 40 Gbs
  • Small footprint and low power dissipation

Concepts

  • Avoid additional driver/receiver electronics
  • Use integrated in-plane laser-modulator at ~ 980 nm to get bandwidth and power required at high efficiency
  • Use high saturation power photodetector to directly drive logic (or same Si receiver as used for electrical interconnects)
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Technical Approach: Transmitter

  • Design & simulate short cavity laser, high-coupling gratings, and shallow-quantum-well modulator sections. Insure power budget is satisfied and thermal issues are understood.
  • Refine QWI to simultaneously optimize gain, grating and EAM sections
  • Fabricate & test device arrays
  • Re-spin designs to respond to system’s needs, fabricate & deliver new modules to industrial collaborators.
  • In Phase II develop 45-degree facets and, microlenses for collimated vertical emission

IPSEL-Mod

Longitudinal cross sections

End-on view

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Technical Approach: Receiver

PDA Bandstructure

  • Design & simulate partially-depleted absorber photodetector for optical interconnect applications. Insure ‘digital receiver’ architecture is valid and that power budget is satisfied.
  • Refine PDA-PD design and secure wafers.
  • Fabricate & test device arrays
  • Re-spin designs to respond to system’s needs, fabricate & deliver new modules to industrial collaborators.
  • In Phase II further develop crosstalk shields, air bridge contacts, and other necessary improvements to meet specifications.

Air-bridge contacts

Initial results

laser simulation
Threshold current and temperature rise vs. Lg

Active length: 75 μm

Rear DBR length: 40 μm

Ridge width: 2 μm

Kappa: 650 cm-1

Grating etch depth: 480Å

LASER Simulation
optical receiver options
Optical Receiver Options

Conventional Receiver Design

“Amplifierless” Receiver Design

Lower noise

Higher speed

PIN Photodiode

High saturation power

High speed

(High linearity)

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