Situ Photoluminescence Measurements Jian Zhu, Wu Bo and Xiaoyuan Hou Physics Department, Fudan University, Shanghai

1. Situ Photoluminescence Measurements Jian Zhu, Wu Bo and Xiaoyuan Hou Physics Department, Fudan University, Shanghai Situ photoluminescence can be used to research some underlying elemental processes of OLED&OSC. Situ photoluminescence is one kind of important measurement techniques for quenching experiment and exciton diffusion length LD measurement. Introduction- in situ PL experimental setup 1. Deposit Alq3 on C60/F4TCNQ (quenching layer) 2. Excite Alq3 via Laser (374 nm) 3. Measure the luminescence intensity using spectroscopy PR705 PR705 Laser Theoretical Method - Diffusion Equation Boundary condition : Compare with experiments : Structure: Alq3/Quenching Layer Structure: Quenching Layer/Alq3 Specimen Structure: Quenching Layer/LiF/Alq3 Structure: Quenching Material doped in Alq3 Theoretical Simulation Conclusion: • The quenching effect between F4TCNQ and Alq3 may be caused by Dexter energy transfer. • F4TCNQ may change property of LiF film to quench the exciton of Alq3. • In 3D quenching, the effect of F4TCNQ doped in Alq3 is similar with C60 doped in Alq3.