'Semiconductor physics' presentation slideshows

Introduction to Microelectronic Circuits EE40 Lecture 1 Josh Hug

Introduction to Microelectronic Circuits EE40 Lecture 1 Josh Hug. 6/21/2010. A Story. Integrated Circuit (Core i7 processor). Courtesy of Intel. Integrated Circuits (Core i7 processor). Almost 1,000,000,000 transistors Features as small as a nanometer.

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The Cavendish Laboratory 2008

The Cavendish Laboratory 2008. Current Research and Future Development. The Department of Physics. The Cavendish Laboratory. The policy of the Department is to maintain a very powerful core of fundamental physics in all its diversity supported by theory.

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The Cavendish Laboratory 2008

The Cavendish Laboratory 2008. Current Research and Future Development. The Department of Physics. The Cavendish Laboratory. Since it was founded in 1874, the Cavendish Laboratory has been at the forefront of discovery in physics.

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Semiconductor Device Modeling and Characterization EE5342, Lecture 20 -Sp 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 20 -Sp 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Equivalent circuit above OSI. Depl depth given by the maximum depl = x d,max = [2 e Si |2 f p |/(qN a )] 1/2

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PHY 5660: Semiconductor Physics and Devices

PHY 5660: Semiconductor Physics and Devices. Total of 39 hours Lectures. References. M. Balkanski and R. F. Wallis, Semiconductor physics and applications , Oxford University Press (Oxford, 2000). QC611.B185 2000

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Vacuum Tube Rectifiers

Vacuum Tube Rectifiers. INTRODUCTION

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Lectures on the Basic Physics of Semiconductors and Photonic Crystals

Lectures on the Basic Physics of Semiconductors and Photonic Crystals. References 1. Introduction to Semiconductor Physics, Holger T. Grahn, World Scientific (2001) 2. Photonic Crystals, John D. Joannopoulos et al, Princeton University Press (1995). 2009. 03. Hanjo Lim

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Research grant applications to VR ? principles, procedures and kSEK

Research grant applications to VR ? principles, procedures and kSEK. Informal information & discussion seminar 2011-02-16 Physics & Astronomy , UU Gunnar Ingelman, chairman grant committee NT-MN Per Nordblad, chairman grant committee NT-NO

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Power FET structure (DMOS and VMOS)

Power FET structure (DMOS and VMOS). Abstract.

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Review of Semiconductor Physics

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Fundamentals of Semiconductor Physics

Fall 2006. Fundamentals of Semiconductor Physics. ? ? Z hejiang I nstitute of M odern P hysics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/. In memory of Prof. Xie Xide (1921-2000). Syllabus. ???????? - 12 ?? a) ???? b) ????? c) ???????? d) ???? ?????? - 3 ??

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???? ???? ???? ?????? ?????? ?? ??????? ?????????

???? ???? ???? ?????? ?????? ?? ??????? ?????????. ??? ?? ??? ????? ???? ???? ?????? ?????? ?????? ?????? ?????? ????? ??? ??????? ???????? ???? ???? ???? ????? ??????? ??????? ???????? ?????? ??????????. ???????? ???????. 20 ?????? 1434 ??. ?????? ???????? ?? ???????? ??????? ?? ???????

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T=300K B=45T

T=300K B=45T. 40. 40. 30. 30. |R xy | (k W ). R xx (k W ). 20. 20. T ?10K. h /2 e 2. 10. 10. 0. 0. -40. -20. 0. 20. 40. 60. V g (V). Dirac holes. Dirac electrons. Graphene: You can never be too thin, or too rich . (Mrs Simpson).

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