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Trapping-related negative feedback as the reason for collected charge restriction

Trapping-related negative feedback as the reason for collected charge restriction in heavily irradiated Si detectors operating with avalanche multiplication. E. Verbitskaya , V. Eremin , A. Zabrodskii Ioffe Physical-Technical Institute of Russian Academy of Sciences

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277 views • 18 slides

PECULIARITIES OF DARK CONDUCTIVITY IN IRRADIATED SILICON

PECULIARITIES OF DARK CONDUCTIVITY IN IRRADIATED SILICON. J. Vaitkus, A. Mekys, V.Rumbauskas , J. Storasta Institute of Applied Research & Department of Semiconductor Physics, Vilnius University. Purpose:.

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168 views • 15 slides

The peculiarities of photoconductivity in the irradiated Si.

The peculiarities of photoconductivity in the irradiated Si. Juozas VAITKUS , A.MEKYS, J. STORASTA, V.RUMBAUSKAS, E.DVINELIS, E.ZASINAS, G.MOCKEVICIUS, N.VAINORIUS, Vilnius University, Institute of Applied Research & Dept. Semiconductor Physics E. FRETWURST Hamburg University.

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293 views • 14 slides

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Trapping-related negative feedback as the reason for collected charge restriction

PECULIARITIES OF DARK CONDUCTIVITY IN IRRADIATED SILICON

The peculiarities of photoconductivity in the irradiated Si.