'Gan' presentation slideshows

Generative Adversarial Networks (GANs)

Generative Adversarial Networks (GANs). From Ian Goodfellow et al. A short tutorial by :- Binglin, Shashank & Bhargav. Adapted for Purdue MA 598, Spring 2019 from http://slazebni.cs.illinois.edu/spring17/lec11_gan.pptx. Outline. Part 1: Review of GANs Part 2: Some challenges with GANs

1.89k views • 47 slides

Simons kick-off Semiconductors PIs: Jim Speck Claude Weisbuch Svitlana Mayboroda

Simons kick-off Semiconductors PIs: Jim Speck Claude Weisbuch Svitlana Mayboroda Marcel Filoche. background papers on impact of InGaN alloy disorder. New theory to calculate effects of disorder Landscape Localization theory of disordered potentials

564 views • 43 slides

851 views • 32 slides

Increasing the Power of Solid-State RF Amplifiers

Increasing the Power of Solid-State RF Amplifiers. Dr. Gabriele Formicone Director of Technology and Innovation. www.integratech.com. Solid State PAs (SSPAs) are overtaking TWTA and Klystron Amplifiers in Mega Watt applications. TWTA. SSPA. Power (Watts). Frequency (GHz). Agenda.

566 views • 26 slides

Yale University, New Haven, CT USA Brookhaven National Laboratory, Upton, NY USA

Yale University, New Haven, CT USA Brookhaven National Laboratory, Upton, NY USA Rutherford Appleton Laboratory, Chilton, Didcot, UK National Semiconductor Corp, Richardson, TX, USA New York University, New York, NY, USA. IEEE Nuclear Science Symposium, Orlando, FL USA 25-31 October, 2009.

362 views • 23 slides

????? ??? GaN ? ???? ? ??? ????

30 ? ???? , ?????. ????? ??? GaN ? ???? ? ??? ????. ??? , ??? ????????? ????????. Spintronics. Control of Spin and Charge of Electrons Simultaneously. Magnetic Tunneling Junction. Spin Field Effect Transistor. Spin dependent tunneling Magnetic RAM. Semiconductor based device

652 views • 21 slides

The GAN Proposal ICFA working Groups Activities on the Far Remote Collaboration-Operation Issues

Collaboratory Issues in the Context of the Linear Collider Efforts F. Willeke, DESY EuroTeV Open Meeting at CERN, September 13, 2004. The GAN Proposal ICFA working Groups Activities on the Far Remote Collaboration-Operation Issues ILC Activities. Prologue. General Consensus:

273 views • 17 slides

Recent Progress in Non-Cesiated III-Nitride Photocathodes

Recent Progress in Non-Cesiated III-Nitride Photocathodes. Douglas Bell, Shouleh Nikzad Jet Propulsion Laboratory Amir Dabiran SVT Associates, Inc. Shadi Shahedipour, Neeraj Tripathi SUNY-Albany. 1 st Workshop on Photocathodes: 300nm-500nm 20 July 2009. Introduction.

313 views • 17 slides

GaN LED with Ion Implanted Cold Zone

GaN LED with Ion Implanted Cold Zone. ?? : ?????? ?? : ??? ???? : ???. Device Fabrication. ICP-RIE. grown by MOCVD. Ni. Ni. P-GaN 0.16um. MQW 5 periods of InGaN/GaN. N-GaN 2um. Undope GaN. Sapphire. Schematic Sketch of the Fabricated. Status: Ion Energy : 180 keV

327 views • 12 slides

F.Bertram et al. Material Science and Engineering B93 (2002) 19-23

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence. F.Bertram et al. Material Science and Engineering B93 (2002) 19-23. Itoh Lab. Takahiro Doki. Contents. ? Introduction -InGaN -Cathodoluminescence ? Motivation

209 views • 11 slides

C-band (5.5 cm), Doppler radar jointly owned by Texas A&M and University of Oklahoma

178 views • 8 slides

Identitas Mahasiswa

NUR AINI HANDAYANI, 4250403022 ANALISIS XRD FILM TIPIS AlxGa1-xN DI ATAS SILIKON (111) YANG DITUMBUHKAN DENGAN METODE DC MAGNETRON SPUTTERING. Identitas Mahasiswa.

213 views • 7 slides

Experiments

138 views • 3 slides

GaN

Atom Probe Tomography of Lattice Matched AlInN/GaN Based HEMT Structures Patrick Kung, University of Alabama Tuscaloosa, DMR 0907558.

269 views • 2 slides

J. Miao, UCLA, DMR-0520894

3D GaN-Ga 2 O 3 Core Shell Structures Revealed by X-ray Diffraction Microscopy Jianwei Miao, UCLA, DMR 0520894.

166 views • 2 slides

Growth and Optical Properties of Nonpolar m -plane GaN on Patterned Si and Sapphire Substrates

210 views • 2 slides

Growth and Optical Properties of Nonpolar m -plane GaN on Patterned Si and Sapphire Substrates

132 views • 2 slides

High Temperature Gallium Nitride-Based Sensors and Electronics ATMI, Inc. Danbury, CT

195 views • 1 slides

6. GaN-on-Si Photonic Device

Way to minimize dislocation density. GaN LEDs. GaN Power Electronic Devices. GaN&SiC. Next Generation: GaN-on-Si and Ge-on-Si. GaN HEMTs in RF telecommunications. GaN-on-Si Technology. 5. Ge-on-Si Substrate and Application. ? Substrate. Si(100), (111). High Efficiency: Green Technology

548 views • 1 slides