'Flat band condition' presentation slideshows

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ECSE-6230 Semiconductor Devices and Models I Lecture 12

ECSE-6230 Semiconductor Devices and Models I Lecture 12. Prof. Shayla Sawyer Bldg. CII, Rooms 8225 Rensselaer Polytechnic Institute Troy, NY 12180-3590 Tel. (518)276-2164 Fax. (518)276-2990 e-mail: sawyes@rpi.edu. April 2, 2014. sawyes@rpi.edu www.rpi.edu/~sawyes/courses.html . 1.

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EE130/230M Review Session

EE130/230M Review Session. Small Signal Models for MOSFET/BJT MOS Electrostatics. BJT Small Signal Model. A small change in I B or V BE will result in a small change in I C and V CE. output current =. input voltage =. the cutoff frequency ( w T = 2 p f T ) is defined at.

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Lecture 15

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Lecture 15

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Lecture #29

ANNOUNCEMENTS Reminder: Quiz #4 on Wednesday 4/4 No Office Hour or Coffee Hour on Wednesday Tsu-Jae will hold office hour tomorrow (4/3) 11-12 OUTLINE The MOS Capacitor: Structure Energy band diagram Reading: Chapter 16.1-16.2. Lecture #29. MOS Capacitor Structure.

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