'Epitaxial layers' presentation slideshows

Institute of Electronic Materials Technology

Institute of Electronic Materials Technology. Joint Laboratory for Characterisation of Defect Centres in Semi-Insulating Materials. Annealing induced evolution of defect centers in epitaxial silicon irradiated with high proton fluences.

215 views • 21 slides

LPI group Lebedev Physical Institute, Moscow

Instrumentation of the Forward Region of a Linear Collider Detector - Workshop at Prague 16 April 2004. LPI group Lebedev Physical Institute, Moscow. Proposal. Use of GaAs as a sensor for LCAL We considered two types of material as sensitive elements of GaAs detector :

284 views • 12 slides

LPI group Lebedev Physical Institute, Moscow

Instrumentation of the Forward Region of a Linear Collider Detector - Workshop at Prague 16 April 2004. LPI group Lebedev Physical Institute, Moscow. Proposal. Use of GaAs as a sensor for LCAL We considered two types of material as sensitive elements of GaAs detector :

123 views • 12 slides

126 views • 12 slides

Crystal Growth Techniques LPE (Liquid Phase Epitaxy)

Crystal Growth Techniques LPE (Liquid Phase Epitaxy) MOCVD (Metal-Organic Chemical Vapor Deposition) OMVPE (Organometallic Vapor Phase Epitaxy) MBE (Molecular Beam Epitaxy). LPE (Liquid Phase Epitaxy). MOCVD (Metal-Organic Chemical Vapor Deposition)

706 views • 5 slides

Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls

Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls. P.K Lin. 1. Outline. Introduction Experiments Results and Discussion Conclusion References. 2. Introduction.

156 views • 4 slides