'Ee130 230a discussion' presentation slideshows

EE130/230A Discussion 2

EE130/230A Discussion 2. Peng Zheng. Electron and Hole Concentrations. Silicon doped with 10 16 cm -3 phosphorus atoms, at room temperature ( T = 300 K). n = N D = 10 16 cm -3 , p = 10 20 /10 16 = 10 4 cm -3

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EE130/230A Discussion 5

EE130/230A Discussion 5. Peng Zheng. Current Flow in a Schottky Diode. EE130/230A Fall 2013. Current Flow. FORWARD BIAS. Current is determined by majority-carrier flow across the M-S junction: Under forward bias, majority-carrier diffusion from the semiconductor into the metal dominates

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EE130/230A Discussion 14

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EE130/230A Discussion 1

EE130/230A Discussion 1. Peng Zheng. Crystallographic Notation. Miller Indices:. h : inverse x -intercept of plane k : inverse y -intercept of plane l : inverse z -intercept of plane. (Intercept values are in multiples of the lattice constant;

187 views • 5 slides