'Atom supercell' presentation slideshows

First Principles Studies on High-k Oxides and Their Interfaces with Silicon and Metal Gate

First Principles Studies on High-k Oxides and Their Interfaces with Silicon and Metal Gate. Feng Yuan Ping ( ??? ) Department of Physics National University of Singapore phyfyp@nus.edu.sg. www.mrs.org.sg. G. S. D. Outline. Introduction Oxygen vacancy in HfO 2 and La 2 Hf 2 O 7

1.12k views • 51 slides

Applications of QMC to Geophysics Ronald Cohen Geophysical Laboratory Carnegie Institution of Washington cohen@gl.ciw.ed

535 views • 25 slides

Motivation

DFT+U calculations of the electronic structure of perfect and defective PuO 2 Eugene Kotomin and Denis Gryaznov Laboratory of Theoretical Physics and Computer Modelling at the Institute of Solid State Physics, University of Latvia Riga, Latvia. Motivation.

356 views • 19 slides