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Design and Implementation of VLSI Systems (EN1600) Lecture11: Delay Estimation

Design and Implementation of VLSI Systems (EN1600) Lecture11: Delay Estimation. Prof. Sherief Reda Division of Engineering, Brown University Spring 2008. [sources: Weste/Addison Wesley – Rabaey/Pearson]. Circuit characterization: delay and power estimation. Delay estimation

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Design and Implementation of VLSI Systems (EN1600) Lecture11: Delay Estimation

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  1. Design and Implementation of VLSI Systems (EN1600) Lecture11: Delay Estimation Prof. Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Weste/Addison Wesley – Rabaey/Pearson]

  2. Circuit characterization: delay and power estimation • Delay estimation • Logical effort for delay estimation • Power estimation • Interconnects and wire engineering • Scaling theory

  3. tpdr:rising propagation delay From input to rising output crossing VDD/2 tpdf:falling propagation delay From input to falling output crossing VDD/2 tpd:average propagation delay. tpd = (tpdr + tpdf)/2 tcdr:rising contamination (best-case) delay From input to rising output crossing VDD/2 tcdf:falling contamination (best-case) delay From input to falling output crossing VDD/2 tcd:average contamination delay. tpd = (tcdr + tcdf)/2 tr:rise time From output crossing 0.2 VDD to 0.8 VDD tf:fall time From output crossing 0.8 VDD to 0.2 VDD Delay definitions

  4. How to calculate delay? Just run SPICE! • Time consuming • Not very useful for designers in evaluating different options and optimizing different parameters • We need a simple way to estimate delay for “what if” scenarios. • Fidelity vs. accuracy

  5. Transistor resistance In the linear region • Not accurate, but at least shows that the resistance is proportional to L/W and decreases with Vgs • If R/C are for a unit size transistor then a transistor of K unit width has KC capacitance and R/K resistance • The resistance of a PMOS transistor = 2× resistance of NMOS transistor of the same size

  6. Use equivalent circuits for MOS transistors Ideal switch + capacitance and ON resistance Unit nMOS has resistance R, capacitance C Unit pMOS has resistance 2R, capacitance C Capacitance proportional to width Resistance inversely proportional to width Switch-level RC models

  7. Estimate the delay of a fanout-of-1 inverter in response to a step input function Inverter RC delay estimate tpd = 6RC

  8. ON transistors look like resistors Pullup or pulldown network modeled as RC ladder Elmore delay of RC ladder Elmore delay model

  9. Sketch a 3-input NAND with transistor widths chosen to achieve effective rise and fall resistances equal to a unit inverter (R). Example: 3-input NAND gate

  10. Annotate the 3-input NAND gate with gate and diffusion capacitance Example: 3-input NAND gate

  11. Annotate the 3-input NAND gate with gate and diffusion capacitance Example: 3-input NAND gate

  12. Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates. Computing the rise and fall delays

  13. Delay has two components: Parasitic delay (due to gate own diffusion capacitance) 6 or 7 RC Independent of load Effort delay 4h RC Proportional to load capacitance Delay components

  14. Best-case (contamination) delay can be substantially less than propagation delay. Ex: If both inputs fall simultaneously Contamination delay • Order of inputs also impact propagation delay. Which is better AB=10 -> 11 or AB=01 ->11?

  15. we assumed contacted diffusion on every s / d. Good layout minimizes diffusion area Ex: NAND3 layout shares one diffusion contact Reduces output capacitance by 2C Merged uncontacted diffusion might help too Diffusion capacitance

  16. Which layout is better? Layout Comparison

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