Overview on New Technologies in Silicon Detectors
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Overview on New Technologies in Silicon Detectors 20th International Workshop on Vertex Detectors June 20 th Rust, Austria. Iván Vila Álvarez Instituto de Física de Cantabria (CSIC-UC ). Scope and Caveat.

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Iván Vila Álvarez Instituto de Física de Cantabria (CSIC-UC )

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Iv n vila lvarez instituto de f sica de cantabria csic uc

Overview on New Technologies in Silicon Detectors20th International Workshop on Vertex DetectorsJune 20th Rust, Austria

Iván Vila Álvarez

  • Instituto de Física de Cantabria (CSIC-UC)


Scope and caveat

Scope and Caveat

  • Focus on technologies proposed for the new generation of HEP pixel/tracker systems.

  • Too broad topic for a comprehensive & detailed report.

  • Even current hot topics, like SiPM, outside the talk’s scope.

  • Detailed reports on dedicated talks (see agenda): sensors material and technologies, FEE-sensor interconnection, low mass supports, cooling, monitoring, local triggering, fast r/o links, industrialization, etc.

  • Thank you to the too long list of people from which I grab all the nice pictures and plots.

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Outline

Outline

  • R&D Targets and trends.

  • New (evolved) sensor concepts: monolithic, semi-monolithic , hybrid and approaches.

  • New hybridization: SoI& 3D-IC

  • Module and detector system engineering.

    • Power distribution systems.

    • Ultra light mechanics

    • Structual& environmental monitoring.

  • Summary

I.Vila, [email protected] - VERTEX2011, RUST June 20th


The colliding future

The colliding Future ?

STAR

  • Bunch of projected EPP experiments driven the mainstream R&D lines.

HL-LHC

  • Low mass, high precision vs. Rad. Resistance High granularity…. not quite app. beyond TRK/VTX.

I.Vila, [email protected] - VERTEX2011, RUST June 20th


R d trends

R&D Trends

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Back to the future evolved hybrids

Back to the future: Evolved hybrids

  • During LHC’s LS1 shutdown a forth extra layer to be installed (IBL) (R ~ 33mm)

  • Ionizing dose > 250 MRads

  • NIEL dose: 5x1015 neqv cm-2

  • Two (Three) competing hybrid technologies

CiS

CNM

FBK

I.Vila, [email protected] - VERTEX2011, RUST June 20th


3d ibl qualification devices fe i4

3D IBL Qualification Devices (FE-I4)

  • Sensor produced at CNM

  • UBM and flip-chip at IZM (Germany)

  • Mounted in Bonn and Genova

20 V

120 V

5 x 1015 nequiv cm-2

I.Vila, [email protected] - VERTEX2011, RUST June 20th


3d ibl qualification devices fe i41

3D IBL QualificationDevices (FE-I4)

  • Good threshold and noise uniformity and CCE

  • Irradiated 3D-FE-I4 devices currently at SPS test beam.

I.Vila, [email protected] - VERTEX2011, RUST June 20th


3d sensors for lhcb s velo upgrade

3D sensorsforLHCb’s VELO upgrade

  • Other advantages: faster, reduced charge sharing to neighboring pixels, slim active edges.

  • Drawbacks: inefficient volume due to column electrodes, much complex processing.

  • 3D bumpbondedto Medipix2 and TimePix ROC.

Single pixel efficiency

120 GeVpions normal incidence

2011 JINST 6 P05002

I.Vila, [email protected] - VERTEX2011, RUST June 20th


3d sensors vs planar

3D sensors vs. Planar

3D

Single pixel scanwithmicrofocus (~5um) monocromatic X raysource.

PLANAR

ratio of multiple hits/ single hit distribution in the single pixel area.

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Semi monolithic sensors depfet

Semi-monolithicsensors: DEPFET

  • Implanted transistor on a fully depleted bulk.

  • Integration of the first amplification stage.

  • Selected solution for Belle II vertex & proposal for ILD vertex.

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Semi monolithic sensors depfet1

Semi-monolithicsensors: DEPFET

  • Fully depleted sensitive volume (large signals)

    • r/o cap. independent of sensor thickness (reduce noise)

  • Internal amplification

    • charge-to-current conversion

    • Large signal, even for thin devices.

    • Further signal amp. and processing outside the active area (no need for bump bonded atop electronics).

  • Charge collection in "off" state.

    • r/o on demand (potentially low power device)

    • only few rows active  low power consumption

    • Frame based pixel matrix R/O, rolling shutter mode

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Ilc depfet prototype

ILC DEPFET prototype

I.Vila, [email protected] - VERTEX2011, RUST June 20th


2010 sps test beam results

2010 SPS Test beamresults

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Monolithic pixels maps for star

Monolithicpixels: MAPS for STAR

  • Fully based on industrial CMOS technology

  • On each pixel a CMOS low noise amplifier.

  • n-well/p-epidiode  incomplete depletion

  • Charge collection by diffusion (small signal)

  • Thinning (50um) standard procedure.

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Maps tackling two main limitations

MAPS: Tackling two main limitations

  • CMOS industry provides a highly resistive epitaxial layer  Increase depletion deep  better SNR and radiation resistivity.

  • MIMOSA 26 (EUDET’s telescope)

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Maps future trends

MAPS future trends.

  • MAPS pixels in Standard CMOS HV technology

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Monolithic hybrid sensors soi

Monolithic “hybrid” sensors: SOI

  • Full CMOS circuitry connected to a highly resistive and fully depleted substrate through silicon vias.

  • CMOS device layer and high resistive substrate isolated by a buried oxide layer (BOX)

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Monolithic hybrid devices 3d ic

MONOLITHIC HYBRID DEVICES: 3D-IC

  • Ingredients: Thin dyes (TIERS) + high density interconnects + vias.

height

Ziptronix

diameter

Typically 2 mm – 30 mm pitch

0.5 mm potential

Height/diameter ~ 10:1

I.Vila, [email protected] - VERTEX2011, RUST June 20th


No pixelated 2d sensors microstrips with resistive electrodes

No pixelated 2D sensors: microstripswith resistive electrodes

S1

S2

Particle

t

t

t2

t1

Ampl1

Ampl2

P4

V

  • Charge division used in wire chambers to determine the coordinate along the sensing wire.

  • Same concept with conventional microstrips with slightly resistive electrodes

  • Better than 30um in long. coocrdinate


2d strip sensors radiactive source 120 sps test bea m

2D strip sensors: radiactive source & 120 SPS Test beam.


Wrapping up

WRAPPING UP

  • More optimized (thinned, low mass reduced power consumption) hybrid pixel still rule the hadronic realm.

  • New generation of precision experiments will use the next sensor technologies: CMOS; DEPFET

  • In medium/ large time scale, SOI and ·3D-IC may become a mainstream industry technology (impact on HEP?)

  • Apologies, many technologies –in some cases perfectly suited for dedicate experiment- left aside: Diamond, FPCCD, CiD, …

I.Vila, [email protected] - VERTEX2011, RUST June 20th


System wise r d powering

SYSTEM-WISE R&D:POWERING

  • Motivations:

    • LHC detectors upgrade: more granularity  more power BUT same cables for power distribution and space constrains.

    • e+e- experiments (ILC, SKEK): ultralightvtx/trackers can not afford bulky cooling systems  pulsed powering

    • Two strategies: serial powering vs. local DC-DC converters.

    • many issues to be addressed

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Low mass mechanics self supporting sensors

LOW MASS MECHANICS:self-supportingsensors

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Mechanics new materials

Mechanics: new materials

  • PLUME Collaboration: SiC Foam

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Fiber optical sensors for structural environmental monitoring

Fiber Optical Sensors for Structural &Environmental Monitoring

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Fiber optical sensors for structural environmental monitoring1

Fiber Optical Sensors for Structural &Environmental Monitoring

  • Application case: relative position monitoring of PXD and SVD Belle-II pixel sub-systems.

  • Extremely radiation rad technology

Fluence 3x1015 pcm-2

Ion. dose 15 MGy !!

zero degradation

Irradiation

I.Vila, [email protected] - VERTEX2011, RUST June 20th


Summary and

SUMMARY and…

  • Semiconductor based detectors are becoming more and more ubiquitous approaching the all-silicon detector concept.

  • Some of the here presented battle fronts aim to still extend their reach further.

  • The high precision and radiation resistance frontiers are approaching each other. Do hybrid and monolithic sensors converge on SOI or 3D-IC devices ?

I.Vila, [email protected] - VERTEX2011, RUST June 20th


A final remark

… a final remark

I. Thou shalt minimize the cost

II. Thou shalt stick to the budget limits.

THANK YOU !

I.Vila, [email protected] - VERTEX2011, RUST June 20th


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