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Explicit V th Based Compact Model of Independent DG MOSFETs with Short Channel Effects

Marina REYBOZ (1) , Thierry POIROUX (1) , Olivier ROZEAU (1) , Patrick MARTIN (1) & Jalal JOMAAH (2) (1) CEA-LETI, 17 rue des Martyrs, 38 054 Grenoble, France (2) IMEP, 3 Parvis Louis Néel, 38016 Grenoble, France.

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Explicit V th Based Compact Model of Independent DG MOSFETs with Short Channel Effects

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  1. Marina REYBOZ(1), Thierry POIROUX(1), Olivier ROZEAU(1), Patrick MARTIN(1) & Jalal JOMAAH(2) (1) CEA-LETI, 17 rue des Martyrs, 38 054 Grenoble, France (2) IMEP, 3 Parvis Louis Néel, 38016 Grenoble, France Explicit Vth Based Compact Model of Independent DG MOSFETswith Short Channel Effects

  2. BASIS OF THE MODEL Strong inversion BASIS Qinv = Qinv1 + Qinv2 Weak inversion i = 1 or 2 i = 1 or 2 We are looking for these equations because we know how to unify them (BSIM3v3) BASIC EQUATIONS PHYSICAL ASSUMPTIONS i = 1 or 2 EXPLANATIONS IN THE POSTER

  3. Short Channel Effects Superposition Theorem + Developpement in infinite series X. Liang et al., “A 2-D Analytical Solution for SCEs in DG MOSFETs” IEEE Transac. On Electron Devices, vol.51, n°8, 2004. PHYSICAL ASSUMPTION & i = 1 or 2 i = 1 or 2 i = 1 or 2

  4. Results L=30nm & Tsi=10nm Work in progress To physically model SCE in saturation: • Velocity saturation • Early voltage

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