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Semiconductor Nanostructure Acoustodynamics. Jens Ebbecke. Linz 25/06/09. outline. fibres and hybrids. acoustoelectrics. acoustooptics. surface acoustic waves. one kind of solutions: surface acoustic waves first investigated in 1885 by Lord Rayleigh for earth quakes. nanostructure.

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Semiconductor Nanostructure Acoustodynamics

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Semiconductor nanostructure acoustodynamics

Semiconductor Nanostructure

Acoustodynamics

Jens Ebbecke

Linz 25/06/09


Semiconductor nanostructure acoustodynamics

outline

fibres and hybrids

acoustoelectrics

acoustooptics


Semiconductor nanostructure acoustodynamics

surface acoustic waves

one kind of solutions: surface acoustic wavesfirst investigated in 1885 by Lord Rayleigh for earth quakes

nanostructure

GaAs

f = cSAW / p


Semiconductor nanostructure acoustodynamics

Surface Acoustic Waves andSemiconductor Nanostructures:

the electronic part


Semiconductor nanostructure acoustodynamics

Gate Voltage

RF Drive of

Frequency f

3mm

100 nm

Current = e·f

Acoustoelectric Current Device(SET-SAW)


Semiconductor nanostructure acoustodynamics

5

f

= 3.58 GHz

P

= 16 dBm

4

T

= 1.7 K

3

Current / nA

2

1

I = e f

.

0

-2.2

-2.1

-2.0

-1.9

Gate Voltage / V

Current Plateaus


Semiconductor nanostructure acoustodynamics

RF Amplitude

Vgate

2D data

I=ef

I=2ef

Vgate

I=3ef

RF Amplitude


Semiconductor nanostructure acoustodynamics

Interaction of SAW and Impurity dot

PRB 68, 245310, (2003)

Vgate

RF Amplitude

-30 dBm

0 dBm


Semiconductor nanostructure acoustodynamics

Semiconductor quantum dots

EF

ΔE

charging energy of a conductor: EC = e2/C  Coulomb blockade

zero-dimensional electronic system:

energy quantisation :

 total energy:

EC = e2/C >> kBT

RT >> h/2e2

ΔE =EN+1 - EN = Δ + EC


Semiconductor nanostructure acoustodynamics

.

.

f

3

e

=

I

.

.

Curr. / nA

e

f

=

2

I

.

.

f

e

1

I

=

I = 1·e·f

×

×

I = 1

e

f

RF Amplitude

quantized current through a static quantum dot

APL 84, 4319 (2004)

I = e·f


Semiconductor nanostructure acoustodynamics

Vgate

b)

a)

RF Amplitude

-30 dBm

0 dBm

Acoustic turnstile device

a)


Semiconductor nanostructure acoustodynamics

Exciting: an Archimedian screw for electrons

PRB 72, 121311(R) 2005

(picture taken from Science,304, 1079 (2004)„Highlights of the recent literature“)


Semiconductor nanostructure acoustodynamics

Charge pumping in Carbon Nanotubes

New J. of Phys. 9, 73 (07)PRB 70, 233401 (04)

1m

I = e·f


Semiconductor nanostructure acoustodynamics

SAW and GaN nanowires

Nanotechnology19 , 275708 (08)

400 nm

GaN

SiO2 / Au


Semiconductor nanostructure acoustodynamics

Surface Acoustic Waves andSemiconductor Nanostructures:

the optic part


Semiconductor nanostructure acoustodynamics

Single photon source by bipolar charge transport

GaAs-Quantumwell

GaAlAs

GaAs


Semiconductor nanostructure acoustodynamics

Single photon source by bipolar charge transport

PRB 74, 035407 (06)


Semiconductor nanostructure acoustodynamics

ZnCdSe/LiNbO3- Hybrid

Epi-Liftoff of ZnCdSe-QWonto LiNbO3 substrate


Semiconductor nanostructure acoustodynamics

Finally...

Organic nanofibres

and new stuff


Semiconductor nanostructure acoustodynamics

Growth of Carbon Nanosticks

Laser ablation of carbon leads self-organisationof carbon nanosticks->

Pyroelectric effects responsible for nanostick growth

-> organic nanowire son LiNbO3


Semiconductor nanostructure acoustodynamics

p6P nanofibres on LiNbO3

Standard white LiNbO3

Black LiNbO3


Semiconductor nanostructure acoustodynamics

p6P nanofibres on LiNbO3

5 µm

5 µm

Post-Growth cleaning withTrimethylpentane

Growth on prestructuredmetal electrodes


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