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Semiconductor Nanostructure AcoustodynamicsPowerPoint Presentation

Semiconductor Nanostructure Acoustodynamics

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Semiconductor Nanostructure Acoustodynamics

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one kind of solutions: surface acoustic wavesfirst investigated in 1885 by Lord Rayleigh for earth quakes

nanostructure

GaAs

f = cSAW / p

Surface Acoustic Waves andSemiconductor Nanostructures:

the electronic part

RF Drive of

Frequency f

3mm

100 nm

Current = e·f

Acoustoelectric Current Device(SET-SAW)

f

= 3.58 GHz

P

= 16 dBm

4

T

= 1.7 K

3

Current / nA

2

1

I = e f

.

0

-2.2

-2.1

-2.0

-1.9

Gate Voltage / V

Current Plateaus

EF

ΔE

charging energy of a conductor: EC = e2/C Coulomb blockade

zero-dimensional electronic system:

energy quantisation :

total energy:

EC = e2/C >> kBT

RT >> h/2e2

ΔE =EN+1 - EN = Δ + EC

.

f

3

e

=

I

.

.

Curr. / nA

e

f

=

2

I

.

.

f

e

1

I

=

I = 1·e·f

×

×

I = 1

e

f

RF Amplitude

quantized current through a static quantum dot

APL 84, 4319 (2004)

I = e·f

Exciting: an Archimedian screw for electrons

PRB 72, 121311(R) 2005

(picture taken from Science,304, 1079 (2004)„Highlights of the recent literature“)

Surface Acoustic Waves andSemiconductor Nanostructures:

the optic part

Single photon source by bipolar charge transport

PRB 74, 035407 (06)

Epi-Liftoff of ZnCdSe-QWonto LiNbO3 substrate

Laser ablation of carbon leads self-organisationof carbon nanosticks->

Pyroelectric effects responsible for nanostick growth

-> organic nanowire son LiNbO3

5 µm

5 µm

Post-Growth cleaning withTrimethylpentane

Growth on prestructuredmetal electrodes