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特色計畫簡報 子計畫三 : 無鉛壓電陶瓷振動能採集器之研發

特色計畫簡報 子計畫三 : 無鉛壓電陶瓷振動能採集器之研發. 鄭 建 民 10/07/2014. 目前成果 — 懸臂樑量測. 發電實驗設備的示意圖. 目前成果. (1) 含鉛 ( 雙層 )- 購買. (2) 無鉛 ( 單層 )- 自製. (3) 無鉛 ( 雙層 )- 自製. 目前成果. Tip Mass = 0 g, Amplitude =1.4 cm. 目前成果. Tip Mass = 2.7 g, Amplitude =1.7 cm. 目前成果. Tip Mass = 3.8 g, Amplitude =1.6 cm. 目前成果.

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特色計畫簡報 子計畫三 : 無鉛壓電陶瓷振動能採集器之研發

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  1. 特色計畫簡報子計畫三:無鉛壓電陶瓷振動能採集器之研發特色計畫簡報子計畫三:無鉛壓電陶瓷振動能採集器之研發 鄭 建 民 10/07/2014

  2. 目前成果—懸臂樑量測 發電實驗設備的示意圖

  3. 目前成果 (1) 含鉛(雙層)-購買 (2) 無鉛(單層)-自製 (3) 無鉛(雙層)-自製

  4. 目前成果 Tip Mass = 0 g, Amplitude =1.4 cm

  5. 目前成果 Tip Mass = 2.7 g, Amplitude =1.7 cm

  6. 目前成果 Tip Mass = 3.8 g, Amplitude =1.6 cm

  7. 目前成果 Tip Mass = 4.4 g, Amplitude =1.2 cm

  8. 目前成果

  9. 102年~今之績效 • 本計畫期間發表之壓電與介電相關期刊論文---14篇(8篇SCI) • Kai-Huang Chen*, Chien-Min Cheng, Jen-Hwan Tsai, Chin-Hsiung Liao, Shu-Hua Liang, “Dielectric and Piezoelectric Characteristics in Lead-Free Lix(K0.5Na0.5)1-x(Nb0.8Ta0.2)O3 Piezoelectric Ceramics Prepared by Two-Step Calcination Method,” Japanese Journal of Applied Physics, Vol. 51, No. 9, 09MD11, Sep. 2012. • Fann-Wei Yang, Kai-Huang Chen*, Chien-Min Cheng, Electrical and Physical Characteristics of Vanadium-Doped Bi4Ti3O12 Ferroelectric Thin Films after Rapid Thermal Annealing,” Ferroelectrics, Vol. 435, Issue 1, pp. 55-61, Dec. 2012. • Chien-Min Cheng*, Kai-Huang Chen, Fann-Wei Yang, “Effect of Sintering Temperature on Piezoelectric and Ferroelectric Properties of Lead-Free Piezoelectric Ta-modified (K0.5N0.5)NbO3 Ceramics,” Ferroelectrics, Vol. 435, Issue 1, pp. 46-54, Dec. 2012. • Fann-Wei Yang, Kai-Huang Chen*, Chien-Min Cheng, Feng-Yi Su, “Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory”, Ceramics International, 39S, S729-S732, May 2013. • Wen-Chung Chang, Chih-Yung Wang, Kai-Huang Chen, Chien-Min Cheng*, “One-Transistor-Capacitor (1TC) Structure of Non-Volatile Ferroelectric RAM Using 0.95(Na0.5Bi0.5)TiO3-0.05BaTiO3 Thin Film”, Integrated Ferroelectrics, 143:1, 10-16, DOI: 10.1080/10584587.2013.795828, May 2013. • Wen-Chung Chang, Chih-Yung Wang, Kai-Huang Chen, Chien-Min Cheng*, “One-Transistor-Capacitor (1TC) Structure of Non-Volatile Ferroelectric RAM Using 0.95(Na0.5Bi0.5)TiO3-0.05BaTiO3 Thin Film”, IntegratedFerroelectrics, 143:1, 10-16, DOI: 10.1080/10584587.2013.795828, May 2013. • Kai-Huang Chen, Chien-Min Cheng*, Chun-Cheng Lin, Jen-Hwan Tsai, “Ferroelectric, Dielectric, and Physical Characteristics of (Ba1-xSrx)(Ti1-yZry)O3 Thin Films Deposited Prepared by RF Magnetron Sputtering”, Integrated Ferroelectrics, 143:1, 32-39, DOI: 10.1080/10584587.2013.795837, May 2013. • Kai-Huang Chen, Chien-Min Cheng*,Chun-Cheng Lin, Jen-Hwan Tsai, “Fabrication and Electrical Characteristics of Metal-Ferroelectric Ba(Zr0.1Ti0.9)O3 Film-Insulator-Silicon Structure for Nonvolatile Memory Devices Applications”, Integrated Ferroelectrics, 143:1, 40-46, DOI: 10.1080/10584587.2013.795840, May 2013. • Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, “Fabrication and Switching Characterizations of Copper Oxide Thin Films for Applications in Resistive Random Access Memory Devices,” Key Engineering Materials, Vol. 602-603, pp. 1052-1055, Mar. 2014. • Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, Jian-Tz Lee, “Electrical and Physical Properties of (K0.5Na0.5)NbO3 Ferroelectric Thin Films,” Key Engineering Materials, Vol. 602-603, pp. 800-803, Mar. 2014. • Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, “Electrical Characteristics in Transparent (Bi3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films,” Key Engineering Materials, Vol. 602-603, pp. 777-780, Mar. 2014. • Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, “Fabrication and Switching Characterizations of Copper Oxide Thin Films for Applications in Resistive Random Access Memory Devices,” Key Engineering Materials, Vol. 602-603, pp. 1052-1055, Mar. 2014. • Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, Jian-Tz Lee, “Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices,” Key Engineering Materials, Vol. 602-603, pp. 1056-1059, Mar. 2014. • Kai-Huang Chen, Jen-Wei Huang, Chien-Min Cheng*, Jian-Yang Lin, Tzung-Shiun Wu, “Nonvolatile transparent manganese oxide thin film resistance random access memory devices”, Japanese Journal of Applied Physics, Vol. 53, 08NL03, July 2014. 與李大輝師提出104年度”能源科技學術合作研究計畫”---複審中 “應用於智慧綠建築外牆之陣列式微型風力發電裝置”

  10. 未來績效展望 • 製作壓電薄片提供給陳文山師、李大輝師應用 • 轉換效率量測----已在進行，下次呈現 • 期刊論文---至少2篇/每年 • 研討會論文---至少15篇/每年 • 申請國科會計畫 • 申請能源科技學術合作研究計畫 • 申請產學計畫 • 申請專利 • 壓電薄片之應用

  11. 晶片摺層電容器結構與外觀 • (b) 矩陣摺層電容器結構

  12. Super Capacitor Chip Parameter 1 Cell Capacitor = 20~30 nF 1 Chip Capacitor = 100 nF ~ 120 nF Dielectric Constant (r) = 100~180 Leakage = 10-7 ~ 10-8 A/cm2 Retention = ~ 106 Sec Operation Temp. = 85oC Charge Time = 0.5 ~ 2 Sec

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