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Source-gated Transistor. Seokmin Hong. Why do we need it?. * Short Channel Effects Source/Drain Charge Sharing Drain-Induced Barrier Lowering Subsurface Punchthrough Mobility Degradation Velocity Saturation And so on ….

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Presentation Transcript
why do we need it
Why do we need it?

* Short Channel Effects

Source/Drain Charge Sharing

Drain-Induced Barrier Lowering

Subsurface Punchthrough

Mobility Degradation

Velocity Saturation

And so on…

No details, no explanation, only a kneeling of Intel\'s CEO and an excuse :

We are in the transition towards a new architecture

slide4

Rectifying Contacts

Forward bias

Reverse bias

slide7

Conduction band minimum

Vg=1V, Vd=0.2V

Vg=0V, Vd=0.2V

Vg=1V, Vd=0V

C.-K. Huang, W.E. Zhang, and C.H. Yang, “Two-dimensional numerical simulation of Schottky barrier

MOSFET with channel length to 10nm,” IEEE Trans. Electron Devices, vol. 45, pp842-848.1998.

slide9

* Source-gated structure

  • Small Saturation Voltage
  • (Saturation voltage coincides with
  • Vt(threthold voltage))
  • High Output Resistance

d & L=2um,Same semiconductor &

insulation deposition

slide10

Transport Mechanism

We constrict the flow of carriers using a source barrier and use the field effect to change the effective height of the barrier and the magnitude of the current.

As the drain voltage is increased, the whole semiconductor region between the source and gate becomes depleted of charge. When this happens, the source current is determined by the voltage on the gate and is insensitive to further increase of voltage on the drain.

slide11

Basic Strategy

Metal

(Source)

Metal

(Gate)

Oxide

Semiconductor

1-D MOSFET

Extraction of Band Bending

Then we can get current using NEGF.

slide12

I-V relation between source and drain-(1)

Relatively large leakage

current when the transistor

Is off.

*Barrier Height = 0.2 V

*Channel = 3 nm

*Oxide thickness = 1 nm

*Vg=0/0.25/0.5/0.75/1 V

slide13

I-V relation between source and drain-(1)

*Barrier Height = 0.3 V

*Channel = 3 nm

*Oxide thickness = 1 nm

*Vg=0/0.25/0.5/0.75/1 V

slide14

I-V relation between source and drain-(1)

Reduced off-current

*Barrier Height = 0.3 V

*Channel = 6 nm

*Oxide thickness = 2 nm

*Vg=0/0.5/1/1.5/2 V

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