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Source-gated Transistor PowerPoint PPT Presentation


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Source-gated Transistor. Seokmin Hong. Why do we need it?. * Short Channel Effects Source/Drain Charge Sharing Drain-Induced Barrier Lowering Subsurface Punchthrough Mobility Degradation Velocity Saturation And so on …. - PowerPoint PPT Presentation

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Source-gated Transistor

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Source gated transistor l.jpg

Source-gated Transistor

Seokmin Hong


Why do we need it l.jpg

Why do we need it?

* Short Channel Effects

Source/Drain Charge Sharing

Drain-Induced Barrier Lowering

Subsurface Punchthrough

Mobility Degradation

Velocity Saturation

And so on…

No details, no explanation, only a kneeling of Intel's CEO and an excuse :

We are in the transition towards a new architecture


Slide3 l.jpg

Metal-Semiconductor Contact


Slide4 l.jpg

Rectifying Contacts

Forward bias

Reverse bias


Slide5 l.jpg

Some terminologies


Slide6 l.jpg

[Conventional Metal source and drain structure]


Slide7 l.jpg

Conduction band minimum

Vg=1V, Vd=0.2V

Vg=0V, Vd=0.2V

Vg=1V, Vd=0V

C.-K. Huang, W.E. Zhang, and C.H. Yang, “Two-dimensional numerical simulation of Schottky barrier

MOSFET with channel length to 10nm,” IEEE Trans. Electron Devices, vol. 45, pp842-848.1998.


Slide8 l.jpg

Performance ??


Slide9 l.jpg

* Source-gated structure

  • Small Saturation Voltage

  • (Saturation voltage coincides with

  • Vt(threthold voltage))

  • High Output Resistance

d & L=2um,Same semiconductor &

insulation deposition


Slide10 l.jpg

Transport Mechanism

We constrict the flow of carriers using a source barrier and use the field effect to change the effective height of the barrier and the magnitude of the current.

As the drain voltage is increased, the whole semiconductor region between the source and gate becomes depleted of charge. When this happens, the source current is determined by the voltage on the gate and is insensitive to further increase of voltage on the drain.


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Basic Strategy

Metal

(Source)

Metal

(Gate)

Oxide

Semiconductor

1-D MOSFET

Extraction of Band Bending

Then we can get current using NEGF.


Slide12 l.jpg

I-V relation between source and drain-(1)

Relatively large leakage

current when the transistor

Is off.

*Barrier Height = 0.2 V

*Channel = 3 nm

*Oxide thickness = 1 nm

*Vg=0/0.25/0.5/0.75/1 V


Slide13 l.jpg

I-V relation between source and drain-(1)

*Barrier Height = 0.3 V

*Channel = 3 nm

*Oxide thickness = 1 nm

*Vg=0/0.25/0.5/0.75/1 V


Slide14 l.jpg

I-V relation between source and drain-(1)

Reduced off-current

*Barrier Height = 0.3 V

*Channel = 6 nm

*Oxide thickness = 2 nm

*Vg=0/0.5/1/1.5/2 V


Source gated transistor is fundamentally 2 d structure so it needs 2 d simulation l.jpg

Source-gated transistor is fundamentally 2-D structureso it needs 2-D simulation!