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Nanotechnology in NEC FRL

Nanotechnology in NEC FRL. Jun’ichi Sone Fundamental Research Labs NEC Corporation. Semiconductor miniaturization. Expectation of Nanotechnology. Miniaturization of Semiconductor Devices Molecular Engineering

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Nanotechnology in NEC FRL

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  1. Nanotechnology in NEC FRL Jun’ichi Sone Fundamental Research Labs NEC Corporation

  2. Semiconductor miniaturization Expectation of Nanotechnology Miniaturization of Semiconductor Devices Molecular Engineering Atom Molecular Manipulation DNA-Protein Manipulation Expectation of new technology domain and new market Mechanics Chemistry Molecular Engineering Mechanically Strong Material Fuel Cell Atom- Molecular Manipulation Nanotechnology Molecular Electronics Carbon Nanotube DNA Protein Manipulation NEMS Quantum Devices Nanobio Devices Life science Electronics

  3. Fuel Cell Field Emission Display Nanotube Electron Devices NEMS Electron Devices Nano-bio Devices Nano Pattern Fabrication Nano Material Characterization Nanotechnology Vision Interdisciplinary New Devices CNT (carbon nanotube) Nanotechnology Basic technology 2010 1nm 3D Nanostructure Fabrication Quantum Computer Semiconductor Breakthrough Devices 5nm Quantum bit Devices 2000 Terabit Memory Device Physics Size::10nm Next generation lithography (70～100nm) Atom Switch Next generation SOC Devices (70～100nm) 30nm 50nm 100nm Roadmap Technology

  4. 3. Pursuing of semiconductorminiaturization limit and exploring breakthrough devices Nanofabrication technology Pursuit of miniaturization limit in Si MOSFET operation Quantum bit devices for Q-computing

  5. 1. Roadmap for Si-LSIs Gate length reduction to realize higher Performance in MOSFET Current development phase Updated version of ITRS2000 ~100nm technology(ASUKA Pj) Leading edge of R & D 8nm MOSFET demonstration MPU gate length (nm) Issues Nanofabrication technology Quantum Effect Increase of leakage current due to tunneling current YEAR

  6. Nanofabrication technology The world smallest 10nm pattern using originally developed high-resolution resist. 4-methyl-1-acetoxy calixarene (MC6AOAc) 10nm-width resist pattern exposed by electron beam

  7. Exploring miniaturelized Si-MOSFET operation limit Demonstration of 8-nm-gate MOSFET operation I-V characteristics (room temperature) SEM image of an 8-nm gate region

  8. Ultra-low power device enabling 1-bit operation by a single electron • (5~6 orders of magnitude lower energy consumption compared to MOSFETs) • Demonstration of RT operation in single electron devices with islands of sub-10nm Metallic Single Electron Devices Gate 0.15 T=4.2 K V=2 mV Si substrate island drain source 0.10 Drain Current (nA) 0.05 Al/AlOx/Al tunnel junctions 0.00 -4 -2 0 4 2 Gate Volatage (V) Schematic view of a single electron device Gate control characteristics

  9. Quantum Computing 1 1 P= P= 2 2 Superposition ? 1 Observation 1> 0 0> + 1> Single quantum bit 0> Q-Computing C-Computing • 2N states can be represented by N q-bits (36 billion by N=60) Operation by keeping wave-function nature (Super parallel) • Issues: Integration, Long life of quantum bit states

  10. Quantum bit device Utilizing quantum mechanical principle to revolutionize the concept of computing • The first solid state qubit demonstrated(1999 Nishina Award) • Riken Project funding(starting October, 2001) Possible high-speed computing applications Decoding (factoring), Date search, NP complete problems (?) SQUID Single Cooper-pair Box 1mm Gate Next steps: • Multi-qubit operation, scaling • Increase possible # of elementary gate operation (Q > 103)

  11. Carbon Nanotube(CNT)New Applications Features of CNT Applications Fuel Cell for Mobile Application Field Emission Display Application

  12. 2002 Benjamin Franklin Medal to Dr.S.Iijimafor the discovery of carbon nanotube and the contribution to the progress of nanotechnology Carbon nanotube Dr.Sumio Iijima Benjamin Franklin Medal Physics Award January 2002

  13. Features of Carbon nanotube Electrical properties • Metalic or Semiconducting conduction depending on chiralities • Appearance of Quantum Effect due to 1-d structure • Highly-Effective Electron Emission Transistor, Wiring,FED Metal Semiconductor Chemical: Adsorption, Storage, Catalysts Chemical modification, Composites Fuel cells Sensors Super strong structure Due to C-C bonds Mechanical: Composite materials

  14. Application of Carbon Nanotube Energy Fuel Cell, Gas Storage Lithium Ion Battery, Super Capacitor Electron Emission Flat Panel Display Microwave Tube Chemistry Adsorption Material Sensor, Catalyst Electronics Transistor, Sensor, Interconnection, Quantum bit Carbon Nanotube Nanotechnology Composite Material AFM, STM Manipulation Nanomachine Electrical conducting Plastics Reinforced Material

  15. Single Wall Carbon Nanohorns SW Carbon Nanohorn aggregates Single wall carbon nanohorns Iijima, S. et al. Chem. Phys. Lett.309, 165 (1999).

  16. CNH Pt catalyst e e e e e e e e e e Mobile Fuel Cells using Carbon Nanohorns • Ultra-High Electrical Energy Capacity 10 times higher than Li battery Nano-structure suitable for supporting catalyst Fuel Cartridge Fuel air CH3OH O2 H+ CH CH OH OH H+ H+ O O 3 3 2 2 e e Cell CO2 Polymer film H2O Mobile Fuel Cell Principle of a Fuel Cell TEM images of CNH 20% increase in output electrical energy by using carbon nanohorn

  17. Comparison of Fuel Cell Output 1000 RT H2/O2 Cell at RT 800 Nanohorn SWNH 600 Cell voltage (mV) 400 Furnace black Conventional carbon material 200 0 0 100 200 300 2 Current density (mA/cm ) • 20% increase of current density by using carbon nanohorn electrodes

  18. TEM images of Nanohorn with Pt catalyst Conventional carbon material (acetylene black) Carbon nanohorn ※ Black particles : Pt catalyst ・ Finer Pt catalyst is dispersed homogeneously on the surface of carbon nanohorns ・ Finer particles have better catalyst capability

  19. Prototype of carbon-nanohorn fuel cell JST, Sansouken, NEC

  20. 6. Exploring Interdisciplinary New Devices Nanobio devices “Fusion of electronics and biotechnology” NEMS devices “Fusion of electronics and mechanics

  21. High-precision separation : Artificial gel DNA Control electrode Nanobio devices Protein DNA 制御電極 Schematics of NEMS nanobio devices

  22. Fabrication of three-dimensional nanostructures Focused-ion-beam chemical-vapor-deposition • Demonstration of three-dimensional nanostructure fabrication (collaborated with Himeji Inst. Technol. & SII Inc.:Nikkei BP award) 2.75m 3-D nanostructure fabrication By FIB-CVD Nano wineglass made of Diamond-like-Carbon Nano-coil • Nanobio devices, NEMS(nano-scale electro-mechanical sysytem), Electro-mechanical switches

  23. Beam fabrication Top down 2.75m FIB excited chemical reaction (3-dimensional nanostructure) EB lithography with calix-arene resist (2-dimensional nanopattern) New market, New industry Nanotechnology Bottom up Self assembled organic membrane Self assembled Chemical reaction Chemical modification DNA Fine particle Carbon nanotube (Diameter ~1nm Smoothness in atomic level) C60

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