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압력센서 ?

압력센서 ?. 안동대학교 센서연구실 이영태. Single crystal silicon. Insulator. Silicon substarte. What is the SOI(silicon-on-insulator). SDB - Silicon Direct Bonding SOS - Silicon on Sapphire SIMOX – Separation by Implantation of Oxygen. 150 × 150 × 3㎛ 3. Dry etching. (1) Etch stopper. Application.

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압력센서 ?

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  1. 압력센서? 안동대학교 센서연구실 이영태

  2. Single crystal silicon Insulator Silicon substarte What is the SOI(silicon-on-insulator) • SDB - Silicon Direct Bonding • SOS - Silicon on Sapphire • SIMOX – Separation by Implantation of Oxygen

  3. 150×150×3㎛3 Dry etching (1) Etch stopper Application 310×120×5㎛3 Wet etching Etching selectivity SiO2:Si = 1:3700 (Wet, TMAH) SiO2:Si = 1:220 (Dry, SF6)

  4. ip i Rp p ir n Rsub Dielectric isolation P-N Junction PN junction Resistance shift ip i p Rp 120~150℃ Insulator Rsub Temperature n SOI structure (2) Dielectric isolation

  5. High dose radiation Insulator Silicon - - - - - - - - - + + + + + + + + + Electron Hole (3) High dose radiation environment

  6. About 1.4 GPa About 0.27 GPa SiO2/Si and SiO2/SI/SiO2 structure Al2O3/Si and Al2O3/SI/Al2O3 structure Residual stress (ANSYS simulation results)

  7. Piezoresistor Pressure Diaphragm Pad(Al) Piezoresistor Diaphragm Diaphragm X Y α L W Pressure Sensor using Shear stress Pressure sensor, accelerometer and flow sensor

  8. Max. shear stress Y X Max. shear stress Diaphragm Shear stress distribution on the diaphragm

  9. (1) Pressure sensor for automobile engine Pressure and temperature behavior in the combustion chamber of a 4-stroke engine http://www-mat.ee.tu-berlin.de/research/sic_sens/sic_sen3.htm

  10. Pressure sensor for measuring combustion gas pressure of automobile engine Engine Stainless steel diaphragm Semiconductor pressure sensor Glass base Combustion chamber Electrode Stainless steel package

  11. Silicon pressure sensor Stainless steel package Glass base Thermal Energy Temperature: 250-300℃ Diaphragm Oil or Gas Engine(aluminum) Thermal resistance Oil 600℃ Stainless steel diaphragm Pressure sensor High temperature pressure sensor

  12. Electrode Piezoresistor SiO2 Piezoresistor Diaphragm Diaphragm Pad(Al) Piezoresistor Diaphragm Simulated shearstress concentration by ANSYS(100kPa) High temperature pressure sensor

  13. TAG D1200 D700 (1200ⅹ1200㎛2) Diaphragm (700ⅹ700 ㎛2) D2200 D1700 (2200ⅹ2200 ㎛2) (1700ⅹ1700 ㎛2) Piezoresistor Bonding Pad Sensor Design

  14. SiO2 Si (a) Initial oxidation (b) v-groove etching (c) Diaphragm etching Single crystal silicon Concentration: 5ⅹ1017 cm-3 (d) Ion implantation(Boron) Fabrication process Diaphragm (100)

  15. Resist SiO2 (e) Si etching with RIE SiO2 CVD Single crystal silicon (f) SiO2 CVD and contact cut Contact Electrode Piezoresisitor Piezoresistor Diaphragm (g) Electrode formation Fabrication process

  16. V-groove Piezoresistor Pyrex glass Pad Pressure sensor chip SiO2 Piezoresistor Glass(bonding) High temperature pressure sensor Reference: Sensors and Materials, Vol.17, 2005, pp269-276.

  17. D2200 D1200 D700 Characteristics of the Pressure Sensor

  18. Characteristic  Value Pressure Range 100 kPa Overpressure 200kPa Supply Voltage DC 5V Full Scale Span 92 mV (TYP) Sensitivity 183.6 ㎶/V kPa Linearity 1.3%FS Hysteresis 0.9%FS Measured Temperature 18∼370 ℃ Operating Temperature -40∼370 ℃ Temperature Effect on Full Scale Span 0.097 %FS/℃ Offset 4.8 mV Temperature Effect on Offset 0.026 %FS/℃ D2200-Specification

  19. Piezoresistor 2nd Al2O3(Dielectric isolation) 1st Al2O3(etch stop) Si High temperature pressure sensor using single SOI structure (2) Pressure sensor using double SOI structure Diaphragm size: 1080×360×5 ㎛3 Piezoresistor: 60×60 ㎛2 Reference: Sensors and Actuators A, Vol.43, Issues 1-3, 1994, pp59-64.

  20. SiO2(etch stop) Wet etching (TMAH) Si Dry etching(RIE) Si Glass (3) Silicon accelerometer using SOI structure Mass size: 1380×1380×230 ㎛3 Beam size: 310×120×5 ㎛3 Reference: Proceeding of the 12th Sensor Symposium, Japan, 1994, pp223-236.

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