-
This presentation is the property of its rightful owner.
Sponsored Links
1 / 20

e - PowerPoint PPT Presentation


  • 115 Views
  • Uploaded on
  • Presentation posted in: General

מגעי מתכת - מוליך למחצה פונקציית עבודה : כמות האנרגיה שיש להשקיע בכדי לפלוט לרמת ואקום אלקטרון הנמצא ברמת פרמי (בשימוש בד"כ עבור מוליכים) E W - אפיניות : כמות האנרגיה שיש להשקיע באלקטרון הנמצא בתחתית פס ההולכה על מנת להביאו לרמת ואקום (במוליכים למחצה) - מגע שוטקי

Download Presentation

e -

An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -

Presentation Transcript


E

-

:

( " )EW -

:

( ) -

"N

" . "

( ") ( : ). " , ". , "" . ( ) , .

e-

Adir Bar-Lev, Semiconductors and Electronic Devices, 2nd edition,1984


E

( : ) " . , " N .

: [ (Schotkey Barrier), (Rectifying contact) ]

" P ".

:

" " .

N

N

-

+

-

+

Adir Bar-Lev, Semiconductors and Electronic Devices, 2nd edition,1984


E

" - :

1 . "

2 . ( )

:

. " " P,

" " N.

, "" ".( " )

,

:

h+

Adir Bar-Lev, Semiconductors and Electronic Devices, 2nd edition,1984


E

. ":

(tunneling)

, .

P , + P

.-, . , " ", , 1996


E

MOS

.MOSFET , . - - "

" P:

" ", . " . :

, , ( ) . , . .

e-

[ ]

QB=

Adir Bar-Lev, Semiconductors and Electronic Devices, 2nd edition,1984


E

( " P)

( "P ) . , .

(Flat Band Potential) ,

":

:Qox ,COX , "

(tox , ox 3.85),

( )

VFB () , ( C-V ( ) COX ). (Accumulation)


E

+

+

+

-

+

-

Adir Bar-Lev, Semiconductors and Electronic Devices, 2nd edition,1984


E

(Inversion) () N , . - wM.

V-C (Cmin) " .

[ PQB :


E

- ( F.E.T - )

:

. (JFET)

. (IGFET) " MOS

(JFET)

Adir Bar-Lev, Semiconductors and Electronic Devices, 2nd edition,1984


E

:

(Source) (Drain) " (Gate) .

" .

.

:

P

VGS -

IDS,

e

N

N

VDS -

Adir Bar-Lev, Semiconductors and Electronic Devices, 2nd edition,1984


E

(MOSFET)

MOS JFET - " .

MOS N .

P .

:

+N P, ( ).

: (0.1 ) , ( ).

MOS - , . .

.

D

S

Adir Bar-Lev, Semiconductors and Electronic Devices, 2nd edition,1984


E

(drain)

J.J. Sparks, Semiconductor Devices, VNR Ltd., London, 1987


E

p channel

Input < 0

V+ -

  • NOR:

  • 1 2 :

  • Gnd - NMOS

  • :

  • V+ PMOS

n channel

Input > 0

(e-)

Gnd


E

(N)

(p)

S. Middleman and A.K. Hochberg Process Engineering Analysis in Semiconductor Device Fabrication Mc-Graw Hill, 1993.


E

-

( PNP) :

(collector) (base) (emitter) :

1. - (XE ) , .

2. - (XC) , " .

XE . IC IE.

IB IE IC

,

XE.

-0.01IE.

RL > RE -

E " .

XE

XC

Adir Bar-Lev, Semiconductors and Electronic Devices, 2nd edition,1984


E

Adir Bar-Lev, Semiconductors and Electronic Devices, 2nd edition,1984

""

( , PNP):

" IB

PNP RL - VCC ( 0

) ( 0 ).

,

, ,

.

""

S. Middleman and A.K. Hochberg Process Engineering Analysis in Semiconductor Device Fabrication Mc-Graw Hill, 1993.


E

J.J. Sparks, Semiconductor Devices, VNR Ltd., London, 1987


E

  • 4- : N+

  • : P , P P+


  • Login