Improved Depth Resolution Using Low Energy Ions and Zalar Rotation

1. Improved Depth Resolution Using Low Energy Ions and Zalar Rotation Nickel (30.3 nm) Chromium (31.7 nm) Chromium Oxide (31.6 nm) Nickel (29.9 nm) Chromium (30.1 nm) Silicon (substrate) Depth Resolution Test Sample F

2. 100 80 Ni 2p Cr 2p Ni 2p Cr 2p Si 2p 60 Atomic Concentration (%) 40 O 1s 20 0 0 185 Sputter Depth (nm) Conventional Sputter Depth Profile4keV Ions & No Zalar Rotation Cr/Si interface width (80/20%) = 23.5nm F

3. 100 Ni 2p Cr 2p Ni 2p Cr 2p Si 2p 80 60 Atomic Concentration (%) 40 O 1s 20 0 0 185 Sputter Depth (nm) Zalar Depth Profile with 4keV Ions Cr/Si interface width (80/20%) = 11.5nm F

4. 100 Ni 2p Cr 2p Ni 2p Cr 2p Si 2p 80 60 Atomic Concentration (%) O 1s 40 20 0 0 185 Sputter Depth (nm) Zalar Depth Profile with 500eV Ions Cr/Si interface width (80/20%) = 8.5nm F

5. Extracting Chemical State Informationwith Linear Least Squares Fitting Step 1. Select regions of interest Step 2. Extract spectra from selected regions Cr oxide Cr metal Cr 2p Cr 2p 600 565 Binding Energy (eV) Sputter Depth F

6. Cr 2p metal oxide metal Sputter Depth LLS Continued Step 3. Fit extracted spectra to the data set F

7. 100 80 60 Ni 2p Cr 2p metal Cr 2p oxide Ni 2p Cr 2p metal Si 2p Atomic Concentration (%) 40 O 1s 20 0 185 Sputter Depth (nm) 0 LLS Completed Step 4. Merge LLS Results To Create a Chemical Depth Profile The final result was obtained using a low voltage ion beam, Zalar rotation, and PHI Multipak F