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Cu 2 O deposition Process PowerPoint PPT Presentation


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Cu 2 O deposition Process. Summary. Concept presentation Technical requirements Process description Advantages. Cu metal layer. K + BH 4 -. Resin. Cu 2 O particle. Plating process : Concept presentation.

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Cu 2 O deposition Process

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Cu 2 o deposition process

Cu2O deposition Process


Summary

Summary

  • Concept presentation

  • Technical requirements

  • Process description

  • Advantages

Rhodia Kermel


Cu 2 o deposition process

Cu metal layer

K+ BH4-

Resin

Cu2O particle

Plating process : Concept presentation

This new technology relies on the existence of cuprous oxide (Cu2O) in the substrate, which allows the metallization of the surface.The particles of Cu2O are distributed in the resin which constitutes the substrate to be metallized at the rate of 2,5 to 10 % in volume. Its transformation into pure metal, Cu°, only operates at the surface and in the micro-holes, when exposed to the contact of a specific chemical reducing agent, a borohydride, following the global reaction :This reduction converts a discrete distribution of Cu2O particles into a continuous metallic copper layer which can be reinforced by both electroless and electrolytic processes up to the required thickness.

4 Cu2O + BH4-8 Cu° + B(OH)3 + OH -

Rhodia Kermel


Cu 2 o deposition process

Plating process : Concept presentation

Products and operation for the process application :

  • Cu2O particles :

    • pulverulent powder, can be refined, dispersed within the polymeric matrix,

    • cheap and usual product,

    • several suppliers.

  • Chemical treatment before the reduction to remove the superficial layer of the matrix :

    • to achieve high level of peel strength (see photo 1 next page),

    • to metallize simultaneously holes and surfaces (see photo 2 next page).

  • Reducing agent : mainly potassium or sodium borohydride

    • usual (several suppliers) and low cost (much cheaper than palladium),

    • easy to handle (not hazardous, in an aqueous form),

    • easy to use : at first sight, borohydride solution can be substituted to palladium batch in the standard process line.

  • Optimization to fit the wanted requirement:

    • concentration, size and dispersion of Cu2O particles,

    • chemical treatment before reducing,

    • reduction’s parameters.

Rhodia Kermel


Cu 2 o deposition process

Plating process : Concept presentation

Photo 1 : Interface between the substrate and the copper obtained after a chemical treatment

Photo 2 : Very good peel strength continuity for the metal layer in surface and holes thanks to reduced Cu2O particles

Rhodia Kermel


Cu 2 o deposition process

Plating process : Concept presentation

PCB prototype that has been obtained through the Cu2O Plating Process Size of the conductor line : 10 µm.

Rhodia Kermel


The cu 2 o plating process is protected by 6 patents covering both laser and photovia drilling

R 3043

14.12.81

France, USA, OEB (DE, BE, GB, IT, NL, SE, IR), Japan.

Organic substrate metallization process using small filler particles of dispersed non conductive oxide

R 3175

15.04.83

France, USA, OEB (DE, AT, BE, SP, FR, IR, IT, LU, NL, GB, SE, CH), Canada, Korea, Japan, Taiwan, Israel, South Africa, Australia.

Metallization process of thermostable films by reducing copper oxide with borohydride followed by electrolytical deposition

R 3176

15.04.83

OEB (DE, AT, BE, SP, FR, IR, IT, LU, NL, GB, SE, CH)

Canada, USA, Korea, Japan, Taiwan

Israel, South Africa, Australia.

Electrically insulated polymeric film metallization by reducing metal oxide particles with borohydride followed by electrolytical deposition

R 3193

27.05.83

France, USA, OEB (DE, AT, BE, FR, GB, IT, LU, NL, SE, CH), Spain, Canada, Taiwan, Korea, Japan.

Possibility of using both isotropic metallizable polymeric substrates with low CTE and resin including metal oxide particles

Plating process : Concept presentation

The Cu2O plating process is protected by 6 patents covering both laser and photovia drilling

Internal patent number

International patent number

Abstract

Rhodia Kermel


Cu 2 o deposition process

Plating process : Concept presentation

The Cu2O plating process has been developed in the eighties by Rhône Poulenc and suspended for strategic reasons in the nineties.

Internal patent number

International patent number

Abstract

R 000 99

27.07.2000

French patent deposit before international extension

Compatibility of laser drilling with metallization process using reduced copper oxide with borohydride followed by electrolytical deposition

R 00181

29. 12. 2000

French patent deposit before international extension

Compatibility of photovia drilling with metallization process using reduced copper oxide with borohydride followed by electrolytical deposition

2001

Patents in progress

Rhodia Kermel


Cu 2 o deposition process

  • Concept presentation

  • Technical requirements

  • Process description

  • Advantages

Rhodia Kermel


Cu 2 o deposition process

1

Laser drilling possibility

Technical compatibility

2

3

Peel strength potentially exceeding market requirements

Dielectric constant features fittingmarket requirements

Plating process : Technical requirements

Three requirements have been tested so far highlighting the potential of the Cu2O metallization process.

Rhodia Kermel


Cu 2 o particles do not hinder the laser drilling quality

Plating process : Technical requirements

Cu2O particles do not hinder the laser drilling quality.

Non optimized laser drilling tests for Epoxy + Cu2O

Cu2O weight concentration: 60 %

in volume: 10 %

Source: Delta Electronic services

Rhodia Kermel


Cu 2 o deposition process

Properties

Measures on ~1,6mm laminates

Epoxy

Cu2O 22% (1)

3.1013

3,6.1013

Superficial resistivity (/)

5.1014

3,8.1015

Volume resistivity (/cm)

4,9

4,8

Dielectric constant Dk (1 MHz)

0,019

0,018

Dissipation factor Df (1 MHz)

Plating process : Technical requirements

Dielectric properties are slightly modified by the Cu2O particles and even improved in certain cases

Note: (1) In weight percentage

Rhodia Kermel


Cu 2 o deposition process

Treatment types

  • Treatment 1:

    • Permanganateor bichromate chemical treatment.

    • At the end of the treatment, necessity to eliminate chromium or manganese oxides thanks to hydroxylamine chlorohydrate or sulphate.

  • Treatment 2:

    • Alkaline chemical treatment in hydroalcoolic environment.

    • Potash: 350g; methanol/ethanol/water: 400cm3/50cm3/10cm3

    • Temperature: 80°C.

  • Peel strength fluctuating according to parameters (epoxy type, particle size and dispersion(3) , physicals conditions,…).

Plating process : Technical requirements

When initial chemical surface treatments are done, peel strength potentially exceed market expectations.

Surface peel strength(1) for Cu2O + epoxy

kg/cm

Norm(2)

Treatment1

Treatment2

Notes:(1) Tests realized ten years ago(2) 1,4 kg/cm = 8 lb/inch(3) Concentration between 10% to 50% in weight percentage

Sources: Kermel, Rhône Poulenc

Rhodia Kermel


With regard to peel strength cu 2 o plating process offers several potential advantages

Plating process : Technical requirements

With regard to peel strength, Cu2O plating process offers several potential advantages

Potential advantages

Very good peel strength continuity in surface and holes thanks to Cu (reduced Cu2O)

Increased peel strength compared to standard epoxy thanks to Cu2O particles anchored inside the resin

Kermel's plating process using Cu2O particles reduced with borohydride

Peel strength level modularity through control of concentration and dispersion of Cu2O particles

Recycling possibility in case of non satisfactory level of metallization

Rhodia Kermel


Cu 2 o deposition process

  • Concept presentation

  • Technical requirements

  • Process description

  • Advantages

Rhodia Kermel


Cu 2 o deposition process

Plating process : Description

At first sight, in the SBU layer production process, minor changes should occur in major PCB makers production lines to implement the Cu2O metallization concept.Changes occur principally in 2 steps :- drilling when compared to RCC (see step 4 of the process chart),- electroless plating with a substitution of the palladium by the borohydride reduction bath (see step 5). With the Cu2O metallization concept, the number of the process steps is :- 25% less than RCC technology,- the same than liquid technology.SBU layer simplified production steps with CO2 laser drilling and with different elaborated materials is presented in the 4 next slides.

Rhodia Kermel


Cu 2 o deposition process

Production steps

Solids

Liquids

RCC(1)

Dry film

Epoxy/polyimide + Cu2O

Liquid resin

Core preparation

  • Micro-etching

  • Rinsing

  • Black oxydation

Copper line

Upper core layer

Dielectric

Build-up deposition (coating/lamination)

Copper clad

Cu2O

particles

  • Stoving

  • Stacking

  • Pressing, heating

  • Disassembling/cleaning

  • Stoving

  • Stacking

  • Pressing, heating

  • Disassembling/cleaning

  • Coating

  • Drying/heating

  • Coating

  • Drying/heating

Surface treatment

  • Half etching

  • Rinsing

  • Surface treatment

  • Rinsing

  • Surface treatment

  • Rinsing

  • Surface treatment

  • Rinsing

Plating process : Description

SBU layer simplified production steps with CO2 laser drilling and with different elaborated materials

Rhodia Kermel

Note: (1) Process with window creation


Cu 2 o deposition process

"Laser" resin

"Laser" resin

  • CO2 drilling

  • Etch back

  • Rinsing

  • CO2 drilling

  • Etch back

  • Rinsing

  • CO2 drilling

  • Etch back

  • Rinsing

  • CO2 drilling

  • Etch back

  • Rinsing

Plating process : Description

SBU layer simplified production steps with CO2 laser drilling and with different elaborated materials

Production steps

Solids

Liquids

RCC(1)

Dry film

Epoxy/polyimide + Cu2O

Liquid resin

ÃDrilling

Photoresist

"window"

  • Surface preparation

  • Photoresist deposit

  • Insulation

  • Development

  • Rinsing

  • Etching

  • Rinsing

  • Photoresist stripping

  • Copper oxydation

  • Rinsing

Rhodia Kermel

Note: (1) Process with window creation


Cu 2 o deposition process

Epoxy/polyimide + Cu2O

Production steps

Solids

Liquids

Copper

RCC(1)

Dry film

Epoxy/polyimide + Cu2O

Liquid resin

ÄElectroless plating

  • Surface reduction with potassium borohydride

  • Rinsing

Copper

Palladium

  • Degreasing

  • Rinsing

  • Pre-catalysis

  • Catalysis

  • Activation

  • Degreasing

  • Rinsing

  • Pre-catalysis

  • Catalysis

  • Activation

  • Surface reduction with potassium borohydride

  • Rinsing

  • Degreasing

  • Rinsing

  • Pre-catalysis

  • Catalysis

  • Activation

  • Fastened thick chemical copper deposit

  • Rinsing

Chemicalplating

  • Thin chemical copper deposit

  • Rinsing

  • Thin chemical copper deposit

  • Rinsing

  • Fastened thick chemical copper deposit

  • Rinsing

  • Thin chemical copper deposit

  • Rinsing

ÅImage transfer

Photoresist

Photoresist

  • Surface preparation

  • Photoresist deposit

  • Insulation

  • Development

  • Rinsing

  • Surface preparation

  • Photoresist deposit

  • Insulation

  • Development

  • Rinsing

Plating process : Description

SBU layer simplified production steps with CO2 laser drilling and with different elaborated materials

Switch the palladium deposit bath by a borohydride reduction bath

Rhodia Kermel

Note: (1) Process with window creation


Cu 2 o deposition process

Production steps

Solids

Liquids

RCC(1)

Dry film

Epoxy/polyimide + Cu2O

Liquid resin

ÆElectrolytical plating

  • Copper deposit

  • Rinsing

  • Photoresist stripping

  • Rinsing

  • Copper deposit

  • Rinsing

  • Photoresist stripping

  • Rinsing

ÇEtching

  • Etching

  • Rinsing

  • Differential etching

  • Rinsing

  • Differential etching

  • Rinsing

  • Differential etching

  • Rinsing

Plating process : Description

SBU layer simplified production steps with CO2 laser drilling and with different elaborated materials

Note: (1) Process with window creation

Rhodia Kermel


Cu 2 o deposition process

  • Concept presentation

  • Technical requirements

  • Process description

  • Advantages

Rhodia Kermel


Cu 2 o deposition process

Plating process : Advantages

This new plating process is :

Easy to implement

- Process gets simultaneously plated holes and surfaces.

- Products are usually cost competitive and easy to handle (Cu2O and borohydride).

- Number of process steps reduced.

- Compatibility with liquid/film technologies.

Reliable

- Due to the high level of peel strength achieved.

- Peel strength of plated copper increased in surface and in micro-via holes.

Technologically advanced

- Reliable access to additive/semi additive processes.

- Reliable access to fine line.

- The presence of Cu2O particles, compatible with the dielectric and CTE requirements, enhance the thermal transfer of dielectric matrix.

Economic

- Reliability and more specifically of plated micro-holes.

- Saving of labor because of less steps and operations.

- Saving of investment because minimum changes in production lines for PCB makers.

Rhodia Kermel


Cu 2 o deposition process

Plating process : Conclusion

As a conclusion, the Cu2O Plating Process is easy to implement, technologically advanced, and above all, reliable and economic.

In that way, our innovative plating technology :

  • comes up to current specifications and even exceeds the market expectations,

  • answer potentially to the evolution in specifications,

  • is adaptable to most industrial processes.

    For more information, please contact :

    V. LORENTZ

    Marketing Department

    Tel : + 33 (0)3 89 20 47 44

    Fax : + 33 (0)3 89 20 47 38

    www.kermel.com

Rhodia Kermel


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