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Sparc v7 NIC

Sparc v7 NIC. TNT Sparc v7 NIC Board. Compiled by Lindy Ahr Southwest Research Institute (210) 522-3212 lahr@swri.org. NIC Functional Block Diagram. NIC Microcontroller. TSC695F Microcontroller (SPARC V7) Memory Interface 32KWord PROM 512KWord SRAM 128KWord EEPROM. NIC Master FPGA.

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Sparc v7 NIC

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  1. Sparc v7 NIC TNT Sparc v7 NIC Board Compiled by Lindy Ahr Southwest Research Institute (210) 522-3212 lahr@swri.org

  2. NIC Functional Block Diagram

  3. NIC Microcontroller • TSC695F Microcontroller (SPARC V7) • Memory Interface • 32KWord PROM • 512KWord SRAM • 128KWord EEPROM

  4. NIC Master FPGA • Local Bus Controller • VME Master Interface • Universal Asynchronous Receiver-Transmitter (UART) • Watchdog Timer

  5. SEU/SEE Mitigation StrategyNIC Sparc v7 Board • The SRAM used in the CPU memory is EDAC protected on the NIC. • Memory should be monitored by memory scrubbing in the NIC firmware. • If an error occurred in this memory on the NIC, the invalid EDAC bit would report an error to the CPU as a single bit or double bit error. • The CPU can correct a single bit error and can perform memory replacement for double bit errors from EEPROM. • Periodic memory scrubbing should be done by firmware on the NIC to continuously read all memory locations to detect any EDAC errors. • In the event of a double bit error, the NIC firmware reloads the SRAMs with data from the EEPROM images to recover, since the SRAM EDAC memory became corrupted.

  6. RS-422 Interface • Dual RS-422 serial interface • Baud rate: 9600, 19200, 38400, 57600, or 115200 bits/second • 8-bit, 1 start, 1 stop, no parity • Data transmitted and received LSB first

  7. Sparc v7 NIC Board Parts List

  8. Sparc v7 NIC EU Board Top

  9. Sparc v7 NIC EU Board Bottom

  10. TNT Parts Radiation Assessment Compiled by Lindy Ahr Southwest Research Institute (210) 522-3212 lahr@swri.org

  11. Requirements Part Applicability • Radiation Evaluation Categories • TID • High dose rate – All parts evaluated for this • Low dose rate – Parts with available data • SEE • SEU • Microcircuit components (Digitals, ICs, ADCs, oscillators, etc..) • SET • Analog components (transistors, ADCs, op-amps, regulators, DC/DC) • SEL – All components • SEB, SEGR • High voltage bipolar transistors (none used) • Power MOSFETs and parts containing (opto FETs, DC/DC)

  12. Bipolar Transistors • JANTXV2N2222AUB (Semicoa, NPN bipolar transistor) • TID HDR - 30krad • TID LDR - 20krad at 0.1rad(Si)/sec • SEE – Latch-up immune, SET TBD for transistor and application • JANTXV2N2907AUB (Semicoa, PNP bipolar transistor) • TID HDR - 60krad • SEE – Latch-up immune, SET TBD for transistor and application • JANTXV2N2905A (Semicoa, PNP bipolar transistor) • TID HDR - 60krad, same transistor as 2N2907 just larger die, package • SEE – Latch-up immune, SET TBD for transistor and application • JANTXV2N2219 (Semicoa, NPN bipolar transistor) • TID HDR - 60krad (Motorola) • SEE – Latch-up immune, SET TBD for transistor and application

  13. Bipolar Transistors (2) • JANTXV2N2857 (Semicoa, NPN bipolar transistor) • TID HDR - 300kRads - Device showed minimal degradation to the highest level tested (300Krad) 50 Rad(Si)/s. • SEE – Latch-up immune, SET TBD for transistor and application • JANTXV2N3821 (MicroSemi, N-Channel, J-FET Depletion Mode) • TID HDR - TBD • SEE – TBD

  14. FETs • JANSR2N7389 (100V) P-Channel • TID HDR – DSCC RHA level “R” (> 100 kRad (Si)) • SEE – Safe Operation Area Defined for VDS and VGS • CU- 28MeV-cm2/mg (Decreasing VDS 100V to 70V with VGS 0 to –15V) • BR – 36.8MeV-cm2/mg (Decreasing VDS 100V to 50V with VGS 0 to –15V • JANSR2N7268 (IRHM7150) (100V) N-Channel • TID HDR – DSCC RHA level “R” (> 100 kRad (Si)) • SEE – Safe Operation Area Defined for VDS and VGS • CU- 28MeV-cm2/mg (VDS 100V with VGS 0 to –15V) • BR – 36.8MeV-cm2/mg (Decreasing VDS 100V to 50V with VGS 0 to –15V)

  15. Opto-coupled FETs • 53124-114 • TID HDR – 100krad per Micropac rad-hard process and data • SEE testing has shown no SEL for LET > 59.9MeV*cm2/mg and no SET/SEB/SEGR for Vds < 70 V at an LET of 59.9 MeV*cm2/mg using heavy ions at a fluence of 1E7 ions/cm2 • NIEL – using radiation tolerant opto-coupler with no SET and minimal CTR degradation for an exposure of 1E12 protons/cm2 (at 63.3MeV) for a DDD of 3.4E9 MeV/g(Si) (> 3.88E8 req’t)

  16. DC/DC Converters • 5962-8968303HXA (International Rectifier, AHE2805S/CH-MSTR) • TID - TBD • SEE – TBD • 5962-9564801HXA (ASA2812D/CH) • TID - TBD • SEE – TBD • 5962-9462901HXA (ASA2805S/CH) • TID - TBD • SEE – H:SET<10MeV*cm2/mg, Destructive >37MeV*cm2/mg • SET was a voltage dropout of 10ms. Device response is dependent on loading.

  17. DC/DC Converters (2) • 5962-9157502HXA (AHE2815D/CH-SLV) • TID TBD • SEE • Glitch error at LETth between 20-26MeV*cm2/mg • SEGR at 28V: test LET 59.6MeV*cm2/mg • SEGR at 34V: test LET 26.6MeV*cm2/mg • Device switchoff errors: LETth between 20-26MeV*cm2/mgTBD • 5962-9158002HXA (AHE2812S/CH-SLV) • TID TBD • SEE TBD • 5962-9102001HZA (AFC461F/CH) EMI FIlter • TID TBD • SEE TBD

  18. Linear Regulators/References • OM13533SRX (Omnirel, OMR186 Low Dropout Regulator) • TID HDR - 26krad with –40mV drift (+/- 0.25 needed) • SEE – SEL LET > 84MeV*cm2/mg, SET LET > 59.7MeV*cm2/mg for Cload >= 20uF (NIC in TCU > 20uF) • LM120-5(National Semiconductor, -5V Regulator) • TID – TBD (Two reports need evaluation) • SEE – TBD • LM140-5 (National Semiconductor, +5V Regulator) • TID – TBD (Three reports need evaluation) • SEE – TBD

  19. Opto-couplers • 66099-105 (Micropac, Rad Tolerant Opto-coupler) • TID HDR – 500krad • CTR degradation 0.48 at 100krad, 0.59 at 200krad, 0.69 at 500krad • SEE – no SEL/SET at 3E12 p/cm2 exposure (63.3MeV)

  20. Linears (1) • M38510/13503BPA (Analog Devices, OP27AZ/883 Op Amp) • TID • 30kRad(Si) - All parts passed all test up to 30kRad(Si) • 40kRad(Si) - Parts marginally exceeded Vos and P and N Input Bias Current parameters. All other tests passed. • SEE - TBD • M38510/13502BPA (Analog Devices, OP07 Op Amp) • TID - Reports indicate some parameter outages for Vos and P and N Input Bias Currents when exceeding 10kRads. Most parts begin to show parameter outage for Vos and P and N Input Bias Currents at >20 kRad(Si). All other tests passed at 20kRad(Si) • SEE - TBD

  21. Linears (2) • 5962-87540012A (Analog Devices, AD585SE/883B S/H Amp) • TID - All parts passed all tests up to 30.0 kRads. Some of the samples in the test started failing marginally after 50kRad in CMRR, Voffset and droop rate. PPM-98-006 • SEE – TBD • 5962-9312901MPA (Analog Devices, AD829SQ/883B Video Op Amp) • TID • All parts passed initial electrical measurements. All irradiated parts passed all parametric tests throughout all irradiation steps (1, 2, 3, and 10kRads) with no observable radiation-induced effects. PPM-95-178 • Another report (PPM-92-092) had parts with PSRR outage at 10kRads as well as Vos outages at 10kRads. • SEE – TBD

  22. Linears (3) • 5962-9456601MPA (CLC411AJ-QML) Op Amp • TID - TBD • SEE - TBD • 5962-9471901MPA (CLC412AJ-QML) Op Amp • TID – TBD (Two reports need evaluation) • SEE – TBD • 5962-9169301MCA (CLC414AJ-QML) Op Amp • TID - TBD • SEE – TBD • 5962-9472501MCA (CLC431AJ-QML) Op Amp • TID - TBD • SEE - TBD

  23. Linears (4) • JM38510/10901BPA (LMC555) Timer • TID – TBD (One reports need evaluation) • SEE – TBD

  24. Microcircuits (1) • National Semiconductor 54AC, ACT, ACTQ part families • TID HDR – 100krad with slight parametric variations for Idd < 500uA and Ioz < 20uA that do not affect function nor reliability • SEE • SEL LET > 120 MeV-cm2/mg • SEU LET > 40 MeV-cm2/mg • Intersil • TID HDR – 300krad DSCC RHA level F • HS9, ACS, ACTS part families • TID HDR – 100krad DSCC RHA level R • 54HC, ACT, HCS, HCTS, CD4000 part families • SEE • HS9, ACS, ACTS, 54HC, ACT, HCS, HCTS part families • SEL/SEU LET > 100MeV*cm2/mg • CD4000 part families • SEL/SEU LET > 75MeV*cm2/mg

  25. Microcircuits (2) • 5962-0151506QYC (Actel, RT54SX72SU-1CQ208B FPGA) • TID – 70 kRad per Actel lot 05T-RTSX72SU-D1HLJ1 data • SEE • SEL LET > 104 • SEU LET > 50, based on MEC foundry • 5962-0054001QXC (SPARC TSC695F) • TID HDR – 300krad per Atmel data • SEE • SEL LET > 100 MeV*cm2/mg • SEU LET = 37.5 MeV*cm2/mg

  26. Microcircuits (3) • 5962-9312601MXX (AD1671SQ/883B Analog Devices ADC) • TID 80krad(Si) • SEE - HI: SEL > 90 MeV*cm2/mg. “AD1671 was found to be virtually immune to latchup for the LET range 11.5 to 90 MeV*cm2/mg.” • 5962-9091103MXA (AD9713BSQ/883B Analog Devices DAC) • TID - 50krad(Si) with the Zero Error parameter slightly out of tolerance. All specifications passed at 20kRad(Si). • SEE - No destructive SEL up to a LET of 93 MeV*cm2/mg.

  27. Microcircuits (4) • 5962P0053601QUX (512K x 8 SRAM Aeroflex UT9Q512) • TID HDR – DSCC RHA level (P > 30 kRad (Si)) • SEE • SEL LET > 80 MeV*cm2/mg • SEU LET = 10 MeV*cm2/mg • 5962P0151101QXC (512K x 32 SRAM Aeroflex UT9Q512K32) • TID HDR – DSCC RHA level P (> 30 kRad (Si)) • SEE • SEL LET > 80 MeV*cm2/mg • SEU LET = 10 MeV*cm2/mg • 5962R9689105QXC (UT28F256QL 32k x 8 PROM) • TID - DSCC RHA level P (100kRad (Si)kRad (Si)) • SEE • SEL LET > 110 MeV*cm2/mg • SEU LET> 57 MeV*cm2/mg

  28. Microcircuits (5) • 5962-3826719Q6C (Maxwell RADPAK 128kx8 EEPROM) • Uses Hitachi die HN58C1001 inside 195mil Al RADPAK • TID HDR – die tolerance > 20kRad(Si) • RADPAK shielding further reduces TID at die (TBD) • SEE • SEL LET > 120 MeV*cm2/mg • Static/read SEU LET > 90 MeV*cm2/mg • Write SEU LET > 18 MeV*cm2/mg • HX6218DBRT (Honeywell, HX6218, FIFO) • TID - 1000 krad (Si) • SEE • Dynamic and static transient upset hardness through 1x109 rad(Si)/s • Dose rate survivability through 1x1011 rad(Si)/s • Soft error rate of <1x10-10 upsets/bit-day • No latchup

  29. Microcircuits (6) • 5962R9475401VYX (Aeroflex/UTMC, UT22VP10 PAL) • TID - 1000 krad (Si) • SEL LET > 109 MeV*cm2/mg • SEU LET = 50 MeV*cm2/mg (min) • STEL-1173RH/MD (Stanford Telecom, Synthesizer) • TID – 1000 krad (Si) • Dose Rate • Upset > 10^9 Rads (Si)/Sec; Latchup >2X10^11 Rads (Si)/Sec • M55310/27-B21A48M000000 (48MHz oscillator) and • TID HDR – 100krad with acceptable parametric variations • Uses National die internal to part (54ACT3301) • SEE – SEL LET > 120 MeV-cm2/mg, SEU LET > 40 • MCM2760-10M (Q-Tech, 32MHz oscillator) • No radiation data found.

  30. Microcircuits (7) • 5962F9563201VXC (RS422 Tx 26CT31) • TID HDR – DSCC RHA level F (> 300 kRad (Si)) • SEE – SEL/SEU LET > 80MeV-cm2/mg • 5962F9563101VXC (RS422 Rx 26CT32) • TID HDR – DSCC RHA level F (> 300 kRad (Si)) • SEE – SEL/SEU LET > 80MeV-cm2/mg • SW06BRC/883B (Analog Devices, QUAD SPST JFET Analog Switch) • TID – Tested to 100 kRad (Si) Parts had minor changes to the measured data points. Needs further analysis. • SEE – TBD • AD590 (Analog Devices, Temperature Sensor) • TID 100kRad(Si) • SEE – TBD

  31. Issues • TID violations • SEE violations

  32. TBR Data Summary

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