STM Study of Low Temperature 1-D Quantum Structures of Si(111)-In 4
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STM Study of Low Temperature 1-D Quantum Structures of Si(111)-In 4  1. Park Sejun, Min Suk-wha, and Lyo In-whan Institute of Physics and Applied Physics. MOTIVATION. Self-organized low dimensional structures of metal on Si(111) surface

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STM Study of Low Temperature 1-D Quantum Structures of Si(111)-In 4  1

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Stm study of low temperature 1 d quantum structures of si 111 in 4 1

STM Study of Low Temperature 1-D Quantum Structures of Si(111)-In 4 1

Park Sejun, Min Suk-wha, and Lyo In-whan

Institute of Physics and Applied Physics


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

MOTIVATION

Self-organized low dimensional structures of metal on Si(111) surface

Quasi-one dimensional chain formation of ~ 1ML In on Si(111)-77

Phase transition from 41 to 42 or 82 structures at ~ 100 K

Reversible phase transition accompanied by a 1D CDW

Atomic structures at Low Temperature are not exactly known

Different chain to chain correlations upon transverse or longitudinal


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

(top) empty state image at – 0.12 V (mid) filled state image at +1.9 V

INTRODUCTION

1. Room Temperature STM

- 2.0 V

+ 2.0 V

Phys. Rev. B 36, 6221 (1987)J. Nogami et al.

Phys. Rev. B 56, 1017 (1997)A. A. Saranin et al., and K. Oura et al.


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

INTRODUCTION

2. RT ARPES & IPES

Surf. Sci. 325, 33-44 (1995)T. Abukawa et al.

Phys. Rev. B 56, 15725 (1997)I. G. Hill and A. B. McLean


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

Ball-and-stick model of the Si(111)-(41)-In reconstruction

INTRODUCTION

3. RT XRD & Cal. Model

‘4’  1

4  ‘1’

Phys. Rev. B 59, 12228 (1999)O. Bunk et al.

Phys. Rev. B , 63, 193307 (2001)Jun Nakamura et al.


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

INTRODUCTION

4. RT & LT STM + PES

LT

RT

RT

Phys. Rev. Lett. 82, 4898 (1999)H. W. Yeom et al.


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

INTRODUCTION

5. LT RHEED & XRD

100K

RT

Phys. Rev. Lett. 82, 4898 (1999)H. W. Yeom et al.

Phys. Rev. Lett. 85, 4916 (2000)C. Kumpf et al.


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

INTRODUCTION

6. LT Theoretical Calculation

41

42

RT 41 Filled

LT 42 Filled

LT 42 Empty

RT 41 Empty

82

Phys. Rev. B 64, 235302 (2001)Jun-Hyung Cho et al.


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

EXPERIMENT

Apparatus

: RT/LT-STM/STS, LEED, In-evaporator

Sample Preparation

: N-type Si(111) substrate ( 0.7~1.3 Ω·㎝, P-doping )

: Conventional annealing & 1200 C flashing

: ~ 1 ML In-deposition on sample at ~ 400 C

: No subsequent annealing after deposition

: LN2 used for low temperature (~77K)


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

RESULTS

1. Clean Si(111) 7  7 Surface

RT LEED : E = 35.3 eV

RT STM : V = -2.0V, I = 0.1nA


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

RESULTS

2. RT Si(111)-In 4 1 Surface

RT LEED : E = 26.3 eV

RT STM : V = -1.8V, I = 0.08nA


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

RESULTS

3. LT In 4  2 Surface

LT STM : V = -1.4V, I = 0.3nA

LT STM : V = +1.4V, I = 0.3nA


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

RESULTS

4. LT In 4  2 Surface

LT STM : V = -1.0V, I = 0.3nA

LT STM : V = +1.0V, I = 0.3nA


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

RESULTS

5. Bias Dependent LT-In 4  2

+1.4V

+1.6V

+1.0V

+1.2V

-1.4V

-1.6V

-1.0V

-1.2V


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

RESULTS

6. ‘8’ 2 Periodicity Observed

Tip Changed

LT STM : V = -1.0V, I = 0.1nA

LT STM : V = +0.4V, I = 0.2nA


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

RESULTS

7. Comparison with Model

A

B

A

B

A

B

DFT Cal. (Blue : +1.0V, Red : -1.0V)

LT STM : V = +1.0V, I = 0.3nA


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

RESULTS

8. Comparison with Model

A

B

A

B

A

B

DFT Cal. (Blue : +1.0V, Red : -1.0V)

LT STM : V = -1.0V, I = 0.3nA


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

Experiments – 5. LT STS Observation of In/Si(111)-82

dI/dV Curve

I/V Curve


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

Experiments – 5. LT STS Observation of In/Si(111)-82

NdI/dV Curve


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

RESULTS

9. Additional Depo. of In

+1.6 V

-1.6 V


Stm study of low temperature 1 d quantum structures of si 111 in 4 1

CONCLUSION (to be modified)

4  2 unit cells are out of phase across the row upon the polarity reversal(consistent with the previous 1st principle DFT calculation)

No zig-zag patterns are observed at filled states(inconsistent with previous 1st principle DFT calculations)

Weak longitudinal interchain correlation of 4X2 unit cells between the rows is found (consistent with previous RHEED results)

Easily delocalized one dimensional empty states of 4X2 unit cells alongthe row is found (extended empty states)

‘8’ 2 unit cells are clearly visible at filled states Thus ‘8 ’ periodicity may not be originated from the out of phase of 4X2 units across the rows (consistent with previous RHEED results)

There are some long-range interactions across the rows

Additional In deposition at LT shows no change of 4X2 periodicity(contrast to the previous STM Results)


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