STM Study of Low Temperature 1-D Quantum Structures of Si(111)-In 4
Sponsored Links
This presentation is the property of its rightful owner.
1 / 21

STM Study of Low Temperature 1-D Quantum Structures of Si(111)-In 4  1 PowerPoint PPT Presentation


  • 103 Views
  • Uploaded on
  • Presentation posted in: General

STM Study of Low Temperature 1-D Quantum Structures of Si(111)-In 4  1. Park Sejun, Min Suk-wha, and Lyo In-whan Institute of Physics and Applied Physics. MOTIVATION. Self-organized low dimensional structures of metal on Si(111) surface

Download Presentation

STM Study of Low Temperature 1-D Quantum Structures of Si(111)-In 4  1

An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -

Presentation Transcript


STM Study of Low Temperature 1-D Quantum Structures of Si(111)-In 4 1

Park Sejun, Min Suk-wha, and Lyo In-whan

Institute of Physics and Applied Physics


MOTIVATION

Self-organized low dimensional structures of metal on Si(111) surface

Quasi-one dimensional chain formation of ~ 1ML In on Si(111)-77

Phase transition from 41 to 42 or 82 structures at ~ 100 K

Reversible phase transition accompanied by a 1D CDW

Atomic structures at Low Temperature are not exactly known

Different chain to chain correlations upon transverse or longitudinal


(top) empty state image at – 0.12 V (mid) filled state image at +1.9 V

INTRODUCTION

1. Room Temperature STM

- 2.0 V

+ 2.0 V

Phys. Rev. B 36, 6221 (1987)J. Nogami et al.

Phys. Rev. B 56, 1017 (1997)A. A. Saranin et al., and K. Oura et al.


INTRODUCTION

2. RT ARPES & IPES

Surf. Sci. 325, 33-44 (1995)T. Abukawa et al.

Phys. Rev. B 56, 15725 (1997)I. G. Hill and A. B. McLean


Ball-and-stick model of the Si(111)-(41)-In reconstruction

INTRODUCTION

3. RT XRD & Cal. Model

‘4’  1

4  ‘1’

Phys. Rev. B 59, 12228 (1999)O. Bunk et al.

Phys. Rev. B , 63, 193307 (2001)Jun Nakamura et al.


INTRODUCTION

4. RT & LT STM + PES

LT

RT

RT

Phys. Rev. Lett. 82, 4898 (1999)H. W. Yeom et al.


INTRODUCTION

5. LT RHEED & XRD

100K

RT

Phys. Rev. Lett. 82, 4898 (1999)H. W. Yeom et al.

Phys. Rev. Lett. 85, 4916 (2000)C. Kumpf et al.


INTRODUCTION

6. LT Theoretical Calculation

41

42

RT 41 Filled

LT 42 Filled

LT 42 Empty

RT 41 Empty

82

Phys. Rev. B 64, 235302 (2001)Jun-Hyung Cho et al.


EXPERIMENT

Apparatus

: RT/LT-STM/STS, LEED, In-evaporator

Sample Preparation

: N-type Si(111) substrate ( 0.7~1.3 Ω·㎝, P-doping )

: Conventional annealing & 1200 C flashing

: ~ 1 ML In-deposition on sample at ~ 400 C

: No subsequent annealing after deposition

: LN2 used for low temperature (~77K)


RESULTS

1. Clean Si(111) 7  7 Surface

RT LEED : E = 35.3 eV

RT STM : V = -2.0V, I = 0.1nA


RESULTS

2. RT Si(111)-In 4 1 Surface

RT LEED : E = 26.3 eV

RT STM : V = -1.8V, I = 0.08nA


RESULTS

3. LT In 4  2 Surface

LT STM : V = -1.4V, I = 0.3nA

LT STM : V = +1.4V, I = 0.3nA


RESULTS

4. LT In 4  2 Surface

LT STM : V = -1.0V, I = 0.3nA

LT STM : V = +1.0V, I = 0.3nA


RESULTS

5. Bias Dependent LT-In 4  2

+1.4V

+1.6V

+1.0V

+1.2V

-1.4V

-1.6V

-1.0V

-1.2V


RESULTS

6. ‘8’ 2 Periodicity Observed

Tip Changed

LT STM : V = -1.0V, I = 0.1nA

LT STM : V = +0.4V, I = 0.2nA


RESULTS

7. Comparison with Model

A

B

A

B

A

B

DFT Cal. (Blue : +1.0V, Red : -1.0V)

LT STM : V = +1.0V, I = 0.3nA


RESULTS

8. Comparison with Model

A

B

A

B

A

B

DFT Cal. (Blue : +1.0V, Red : -1.0V)

LT STM : V = -1.0V, I = 0.3nA


Experiments – 5. LT STS Observation of In/Si(111)-82

dI/dV Curve

I/V Curve


Experiments – 5. LT STS Observation of In/Si(111)-82

NdI/dV Curve


RESULTS

9. Additional Depo. of In

+1.6 V

-1.6 V


CONCLUSION (to be modified)

4  2 unit cells are out of phase across the row upon the polarity reversal(consistent with the previous 1st principle DFT calculation)

No zig-zag patterns are observed at filled states(inconsistent with previous 1st principle DFT calculations)

Weak longitudinal interchain correlation of 4X2 unit cells between the rows is found (consistent with previous RHEED results)

Easily delocalized one dimensional empty states of 4X2 unit cells alongthe row is found (extended empty states)

‘8’ 2 unit cells are clearly visible at filled states Thus ‘8 ’ periodicity may not be originated from the out of phase of 4X2 units across the rows (consistent with previous RHEED results)

There are some long-range interactions across the rows

Additional In deposition at LT shows no change of 4X2 periodicity(contrast to the previous STM Results)


  • Login