SALIENT FEATURES OF SHALLOW DONOR INTERACTIONS IN PROTON-IRRADIATED SILICON. V.V. Emtsev and G.A. Oganesyan Ioffe Physicotechnical Institute Russian Academy of Sciences 194021 St.Petersburg, Russia V.V. Kozlovskii St. Petersburg State Polytechnical University
V.V. Emtsev and G.A. Oganesyan
Ioffe Physicotechnical Institute
Russian Academy of Sciences
194021 St.Petersburg, Russia
St. Petersburg State Polytechnical University
195251 St. Petersburg, Russia
what we have learnt from literature
defect formation kinetics, interactions with P, annealing
irradiation and annealing conditions, electrical measurements etc
close attention to defect interactions with P
V.S. Vavilov, N.U. Isaev, B.N. Mukashev, A.V. Spitsyn. Sov. Phys. Semicond. (AIP), vol. 6 (6) (1972).
L.C. Kimerling, P. Blood, W.M. Gibson. Defects and Radiation Effects in Semiconductors, 1978. Conf. Ser. No 46 The Institute of Physics, Bristol and London, 1979) pp. 273-280.
Cf the production rates being about 200 cm1 for proton irradiation at 10 MeV and 0.1 cm1 for electron irradiation at 1 MeV.
G. Davies, S. Hayama, L. Murin, R. Krause-Rehberg, V. Bondarenko, A. Sengupta, C. Davia, A. Karpenko. Phys. Rev. B 73,165202 (2006).
Thick samples of 0.5 to 0.9 mm to eliminate surface effects.
Irradiation through the samples to suppress hydrogen-related defect formation.
Samples cut from moderately doped FZ-Si crystals to suppress side reactions with oxygen and carbon.
Wafers of FZ-Si doped with P at (5-7)1015 cm3 .
The compensation ratio K= NA / ND is very low, 0.01.
Irradiation and annealing conditions
In the case of the proton irradiation ND was found to be much larger than NA . In other words, the loss of shallow donor states of P due to interactions with intrinsic point defects exceeds substantially the concentration of radiation-produced acceptors.
= (12010) cm-1. Interactions of P atoms with intrinsic point defects turned out to be the main way leading to the decreasing concentration of charge carriers under proton irradiation.
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