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Investigation into the strong residuals seen near the Oxygen edge in MOS spectra of bright continuum sources. Rate Dependent CTI effect ? Steve Sembay. Event 1. Readout direction. Event 2. Trap. Emission timescales for filled traps (Holland et al. 1993, NIMS, A326, 335).

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Presentation Transcript
slide1

Investigation into the strong residuals seen

near the Oxygen edge in MOS spectra of

bright continuum sources.

Rate Dependent CTI effect ?

Steve Sembay

slide2

Event 1

Readout direction

Event 2

Trap

slide3

Emission timescales for filled traps

(Holland et al. 1993, NIMS, A326, 335)

σn electron capture cross section

Xn entropy factor

υth electron thermal velocity

Ncdensity of states in conduction band

E energy level of trap

T temperature

slide4

Emission timescales for filled traps

(Holland et al. 1993, NIMS, A326, 335)

c.f. row transfer time of MOS = 15 µs

slide8

SW Obs.

MOS v RGS Line Energy: N line ~ 432 eV J. Carter (Mallorca 06)

Most MOS Large Window Mode

slide11

Is there a “possible” gain shift at O: CTI dependent on rate?

Method 1: Analyse spectra from different regions

slide12

Sample of bright AGN/BL Lacs: The “Usual Suspects”

3C 273 0094

MKN 421 0165

MKN 421 0171

3C 273 0277

H1426+428 0278

PKS2155-304 0362

PKS2155-304 0450

ARK 120 0679

H1426+428 0852

PKS2155-304 1095

PKS2155-304 1266

3C 273 1299

MKN 421 1357

slide13

MOS1

Count Rate v Offset

In Boxes

Before/After Cooling

slide14

MOS2

Count Rate v Offset

In Boxes

Before/After Cooling

slide15

Is there a “possible” gain shift at O: CTI dependent on rate?

Method 2: Flag precursor events from event file

slide16

Flag Bad

Flag Bad

Readout direction

slide20

|Summary:

Observed offset is not affected by removal of

precursor events in CCD RAWY direction

This suggests offset is not caused by incorrect

application of CTI measurement due to trap

filling in CCD.

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