VDMOSFET (Vertical Double Diffused Metal Oxide Field Effect Transistor) power device

1. Rd Source 50V Rg Gate Digital scope Drain 10V The measurement circuit Dependency of Oxide Thickness Effect on the Evolution of n-MOSFET Switching Time with Electrical Stress C. SALAME 1, R. HABCHI 1, 2, B. NSOULI 3, A. Khoury, and P. MIALHE 2 1CEA-LPSE, Faculty of Sciences II, Lebanese University, 90656 Jdeidet El Mten, Lebanon 2LP2A, Université de Perpignan, 52 av de Paul Alduy, 66860 Peprignan cedex, France 3Lebanese Atomic Energy Commission , airport highway, P.O. Box 11-8281, Beirut, Lebanon Measured waveforms VDMOSFET (Vertical Double Diffused Metal Oxide Field Effect Transistor) power device Experimental results • CVS stress studies on three different devices : thick , moderate and thin oxide thicknesses (IRF520, IRL3215 and IRLZ14) ► Thick oxide: Positive charge accumulation at the beginning of stress Interfacial degradation for larger doses of stress ► Intermediate oxide: Smaller oxide charge accumulation larger interfacial degradation ► Thin oxide: No oxide charge accumulation large interfacial degradation • Conclusion : • A faster device could be obtained by certain doses of stress in thick oxides • Thin oxides are less vulnerable to energy deposition by hot electrons • Reducing oxide thickness is a good solution for hardening COTS (Commercial of The Shelf) devices 1 P101/MAPLD 2005 SALAME