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Instrumentation for High Energy Particle and Nuclear Physics

Instrumentation for High Energy Particle and Nuclear Physics. Four independent subprojects with the following structure:

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Instrumentation for High Energy Particle and Nuclear Physics

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  1. Instrumentation for High Energy Particle and Nuclear Physics • Four independent subprojects with the following structure: • R&D for future silicon systems: UoO centrally: Ole Dorholt + post.docs (Ole Rohne 50% from 1.1.2007 + one more), MiNilab: Bengt Svensson + collaborators, UoB: Kjetil Ullaland + post.docs. Covers: • 3D sensors - A key collaborator is SINTEF for processing of 3D sensors • Electronics related to such sensors • Will meet with Thor Erik Hansen from SINTEF at CERN Monday about 3D prototype. Meeting 27.11 in Oslo to define next steps. • Techncial student programme at CERN: Jens Vigen and Nils Hoimyr. Around 10-12 students spend on the average 12 months working in various research groups. From NTNU, HIST, HIG soon, HiB, HiM … etc • ILO/TTO: Steinar Stapnes executes the contracts in close co-operation with the Norwegian Research Council. Ole Petter Nordahl is currently hired to do this. Work on contracts, technology transfers, recruitement, and a general Norwegian CERN WEB portal. • CLIC: Steinar Stapnes supervises Erik Adli. Erik is well underway (and will teach accelerator physics in FYS4550 next week) • In addition, for the International Research Team (Forskerskole): Dieter Roehrich and Bernhard Skaali act as main contacts at UoB and UoO, respectively. See link to last workshop from: http://www.fys.uio.no/forskning/drgrad/forskerskoler/irtg/ We should send all interested Master Students to these workshops Instrumentation for the future

  2. Schematics of 3D- and ordinary detector structures • Proposed by S.I. Parker, C.J. Kenney and J. Segal (NIM A 395 (1997) 328) • Called 3-D because, in contrast to silicon planar technology, have three dimensional (3-D) electrodes penetrating the silicon substrate • SINTEF/UiO are currently processing 3D structures for a group consisting investigation by a collaboration within Brunel Univ., Hawaii Univ., Stanford Univ. and CERN - depletion thickness depends on p+ and n+ electrode distance, not on the substrate thickness  (1) can operate at very low voltages, (2) can have a high doping for ultra-high radiation hardness, (3) are fast and (4) can be active almost to the edge Instrumentation for the future

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