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ZnTe:O provides intermediate states and bandgap at near optimal energy

Intermediate-band optoelectronic transitions in ZnTeO for high-efficiency solar energy conversion. 2 m m ZnTe:O on GaAs. Photo of prototype ZnTe:O solar cell. Absorption bands for Intermediate states. ZnTe:O provides intermediate states and bandgap at near optimal energy

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ZnTe:O provides intermediate states and bandgap at near optimal energy

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  1. Intermediate-band optoelectronic transitions in ZnTeOfor high-efficiency solar energy conversion 2mm ZnTe:O on GaAs Photo of prototype ZnTe:O solar cell Absorption bands for Intermediate states • ZnTe:O provides intermediate states and bandgap at near optimal energy • Intermediate band behavior observed in ZnTe:O, with long carrier lifetime • Enhanced response observed in ZnTe:O below ZnTebandedge, higher short circuit current • High efficiency requires better junction ZnTe:O O-States AM1.5 ZnTe Time-resolved PL (W. Metzger at NREL) long carrier lifetime at O states Response below bandedge in ZnTe:O solar cell and enhanced short circuit current density in comparison to ZnTe J. Phillips, University of Michigan

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