Threshold Shift vs Gate Oxide Thickness
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Threshold Shift vs Gate Oxide Thickness. Poly- Si Gate. SiO 2. Si. +. +. +. +. +. +. +. +. +. +. +. +. e --. e --. +. +. +. +. +. +. +. +. Tunneling Region. +. +. +. +. Hole removal process by tunneling in thin-oxide MOS Structures. Dosage = 150 Krads.

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Threshold Shift vs Gate Oxide Thickness

Poly- Si

Gate

SiO2

Si

+

+

+

+

+

+

+

+

+

+

+

+

e--

e--

+

+

+

+

+

+

+

+

Tunneling Region

+

+

+

+

Hole removal process by tunneling in

thin-oxide MOS Structures

Dosage = 150 Krads

Sachs et. al. IEEE Trans. Nuclear Science NS-31, 1249 (1984)

Book. Timothy R Oldham “Ionizing Radiation Effects in MOS Oxides” 1999 World Scientific


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4 Wire Current shunt

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