1 / 16

Evaluation of HiCUM for Modeling DC, S-parameter and Large-Signal Characteristics of SiGe HBTs M.R.Murty, D.Sheridan, D

Evaluation of HiCUM for Modeling DC, S-parameter and Large-Signal Characteristics of SiGe HBTs M.R.Murty, D.Sheridan, D.Ahlgren and D.Harame Communications R&D Center IBM Microelectronics Essex Junction, VT. Model Extraction Methodology and Technology Details.

naava
Download Presentation

Evaluation of HiCUM for Modeling DC, S-parameter and Large-Signal Characteristics of SiGe HBTs M.R.Murty, D.Sheridan, D

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Evaluation of HiCUM for Modeling DC, S-parameter and Large-Signal Characteristics of SiGe HBTs M.R.Murty, D.Sheridan, D.Ahlgren and D.Harame Communications R&D Center IBM Microelectronics Essex Junction, VT Hicum Users’ Group Meeting (BCTM2002)

  2. Model Extraction Methodology and Technology Details • Transistor Structures used for Parameter Extraction: • (0.32, 0.48, 0.64, 0.96) m x 8.4  m with a CBEBC layout • Scaling by TRADICA and Models extracted on structures with a CBE layout • Simulations and Optimizations done in ADS2001 & ADS2002. • Technology Details:High-Speed and High-Breakdown Versions with ~47GHz and 27 GHz fT and BVCEO of ~3.5V and 5.5V. Hicum Users’ Group Meeting (BCTM2002)

  3. Parameter Extraction • Base Resistance Ring-Emitter Structures (several W’s and 2 L’s) • Emitter Resistance Modified Open-Collector Method • Collector Resistance Test Structures • Capacitances Cold S-Params + Large area monitors • Avalanche Parameters: Ib vs Vbc Characteristics • Current Parameters Gummels and Output Curves • Transit Time Parameters: Test Transistors (several W’s and one long L) Hicum Users’ Group Meeting (BCTM2002)

  4. Ic & Ib (A) Gummel Curves and Forward Gain -0.32 um x 16.8 um, HB device Hicum Users’ Group Meeting (BCTM2002)

  5. Output Curves -0.32 um x 16.8 um, HB device Hicum Users’ Group Meeting (BCTM2002)

  6. S-Parameter Results • Bias Points: Vbe = 0.82 V, 0.90 V, 0.93 V and Vce = 2 V. • (1 below ft peak, one at peak ft and one past ft peak) • Frequency range: 2-40 GHz. • Optimizations were done using Y-parameters (in ADS). • Ft-Ic: Vcb = -0.3, 0, 1.0, 2.0, 3.0 V Hicum Users’ Group Meeting (BCTM2002)

  7. Phase(S11) S11 -0.32 um x 16.8 um, HB device o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model Hicum Users’ Group Meeting (BCTM2002)

  8. S21 -0.32 um x 16.8 um, HB device o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model Hicum Users’ Group Meeting (BCTM2002)

  9. S12 -0.32 um x 16.8 um, HB device o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model Hicum Users’ Group Meeting (BCTM2002)

  10. S22 -0.32 um x 16.8 um, HB device o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model Hicum Users’ Group Meeting (BCTM2002)

  11. |H21| and MAG/MSG -0.32 um x 16.8 um, HB device o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model Hicum Users’ Group Meeting (BCTM2002)

  12. |fT vs Ic -0.32 um x 16.8 um, HB device o Measurement __ Model (Vcb = -0.3, 0, 1, 2, 3 V) Hicum Users’ Group Meeting (BCTM2002)

  13. Intermodulation Distortion Results • Measurements done using ATN Load-pull system and Simulations • Using Harmonic Balance • 2-tone Simulations and Intermodulation Distortion with • 50  termination, Sheridan, Murty and others • CMC,April 2001 (PortoRico) & present work • 1-tone Simulations and harmonic Distortion with a 50  termination • Schroter et.al., IEEE TED, 47, pp1529-1535 (2000) • 2-tone Intermodulation Distortion with matched load and source • Murty et.al., (To be published) Hicum Users’ Group Meeting (BCTM2002)

  14. Ic & Ib (mA) Pout, IM3, IM5 (dBm) |Pout, IM3, IM5, Ic and Ib -0.32 um x 16.8 um, HB device __ Hicum o Vbe = 0.9109 V, Vce= 2 V,f= 900 MHz, =0.1 MHz __ Hicum simulations using Harmonic Balance Hicum Users’ Group Meeting (BCTM2002)

  15. Conclusions • Hicum Model is developed for a SiGe process and good fits • demonstrated for DC, S-parameter and Large-signal characteristics. • The simulations were done in ADS2001/02 and the model • implementation is found to be robust. • (at least at the device level) Hicum Users’ Group Meeting (BCTM2002)

  16. ACKNOWLEDGEMENTS Thanks to M.Schroter, K.Newton, W.Ansley for many useful discussions Hicum Users’ Group Meeting (BCTM2002)

More Related