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An overview on ET-WP2 activities in Glasgow

An overview on ET-WP2 activities in Glasgow. R. Nawrodt, A. Cumming, W. Cunningham, J. Hough, I. Martin, S. Reid, S. Rowan ET-WP2 Workshop, Genoa/Italy 15 th September 2009. Content. design study report mirror thermal noise calculation size estimate of the mirror novel concept:

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An overview on ET-WP2 activities in Glasgow

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  1. An overview on ET-WP2 activities in Glasgow R. Nawrodt, A. Cumming, W. Cunningham, J. Hough, I. Martin, S. Reid, S. Rowan ET-WP2 Workshop, Genoa/Italy 15th September 2009 Nawrodt, Genoa 09/2009

  2. Content • design study report • mirror thermal noise calculation • size estimate of the mirror • novel concept: nano-structured optics (surface loss of silicon) • suspension thermal noise • experimental work supporting the ET design • next steps Nawrodt, Genoa 09/2009

  3. Mirror thermal noise • review of mirror thermal noise revealed a coating Brownian noise limited regime (see talk J. Franc or ET-021-09) Si(111) standard dielectric coating (Ta2O5 / SiO2) 20 K Nawrodt, Genoa 09/2009

  4. Mirror thermal noise • reason for high coating Brownian noise is the increasing mechanical loss of the amorphous coating materials Nawrodt, Genoa 09/2009

  5. Size estimate • further reduction by means of larger beam radius 18 K 18 K • unrealistic beam radius needed • combination of upscaling and better coatings needed • max. beam radius determined by availability of silicon (dia. 20 inch) Nawrodt, Genoa 09/2009

  6. Mirror thermal noise • What coating loss is needed and how can it be achieved? • international coating research is ongoing, but so far we don’t have a full understanding of the origin of this loss example 4×10-4 for Ta2O5 2×10-4 for SiO2 Nawrodt, Genoa 09/2009

  7. Si 500 nm Monolithic Waveguide Mirror • aim: no amorphous coating materials needed  low mechanical loss  low thermal noise • high reflectivity was shown (> 99.8%) • combined use at 1550 nm could reduce optical absorption and would thus reduce problems arising for the heat extraction surface area is roughly doubled by the structure  surface loss will contribute stronger Nawrodt, Genoa 09/2009

  8. Surface Loss of Silicon • A thin lossy surface layer is assumed: • If the structure is thin only the top and bottom surface contribute: • Following Gretarsson and Harry (1999): with the dissipation depth ds which is obtained from measurements with oscillators and at temperatures where the surface loss will dominate (thin samples at low temperatures).  … displacement field Nawrodt, Genoa 09/2009

  9. Surface Loss of Silicon • mechanical loss obtained from different published papers for silicon oscillators with small dimensions (T<18 K) in pure bending  = sub× ds = 0.5 pm loss can be influenced by different treatment techniques (e.g. hydrogen passivation)  currently under investigation Nawrodt, Genoa 09/2009

  10. [Li et al., Appli. Phys. Lett. 83 (2003)] Monolithic Waveguide Mirror • Brownian thermal noise estimate  = 0.5 pm S/V = 4/t (t … thickness) µ ~ 3 • for very small structures the size dependence of the Young’s modulus needs to be considered • no additional losses are assumed (TE cancelled at 18 K) Nawrodt, Genoa 09/2009

  11. Monolithic Waveguide Mirror • Brownian thermal noise estimate • monolithic waveguides have a smaller contribution than the bulk • thermal noise modelling still at an early stage 18 K total thermal noise, 18 K Nawrodt, Genoa 09/2009

  12. Suspension thermal noise • The mechanical loss of silicon suspension elements arises from 3 main contributions – thermoelastic, surface and intrinsic bulk. • Thermoelastic peak shifts to higher frequencies while cooling. 300 K 50 K  680 µm  680 µm Nawrodt, Genoa 09/2009

  13. Suspension thermal noise • simple TN estimate for 1 stage monolithic suspension • full treatment (with correlations) leads to higher thermal noise in the pendulum noise (see e.g. poster P. Puppo @ Amaldi8) 18 K circular Si(100) fibre ( 680 µm, 4 fibres for each optical element, L = 1 m) mirror (180 kg,  500 mm, Si(111)) beam radius 90 mm Nawrodt, Genoa 09/2009

  14. Experimental work • mechanical loss of coating materials (understanding and reduction of mechanical loss) • mechanical loss of silicon flexures (extraction of surface loss, influence of surface treatment) • silicon bonding, mechanical loss of bonds (bond loss values needed for realistic design) • strengths of bonds (300 and 80 K) (pieces need to be bonded, mechanical “stability”) Nawrodt, Genoa 09/2009

  15. Bond experiments • bond technique needs to be characterised for the design: • mechanical properties (breaking strength, mechanical loss, Young’s modulus) • thermal properties (thermal conductivity, collaboration with the Florence group) • details at the ET annual meeting Nawrodt, Genoa 09/2009

  16. Future work • refined suspension model based on realistic design information needed on exact design, temperature distribution, requirements due to cooling strategy • Xylophone “option” (optimisation, noise levels) • heat extraction concepts • combination of results  suggestions for design study Nawrodt, Genoa 09/2009

  17. [5] T. D. Stowe et al., Attonewton force detection using ultrathin silicon cantilevers, Appl. Phys. Lett. 71 (1997) 288. [6] K. Y. Yasamura et al., Quality Factors in Micron- and Submicron-Thick Cantilevers, Journal of Microelectromechanical Systems 9 (2000) 117. [7] H. J. Mamin, D. Rugar, Sub-attonewton force detection at millikelvin temperatures, Appl. Phys. Lett. 79 (2001) 3358. [8] K. Wago et al., Low-temperature magnetic resonance force detection, J. Vac. Sci. Technol. B 14 (1996) 1197. [9] unpublished (measurements in June/July 2009) [10] S. Reid et al., Mechanical dissipation in silicon flexures, Phys. Lett. A 351 (2006) 205. [11] S. Kroker, diploma thesis, University of Jena, 2009. [12] R. E. Mihailovich, J. M. Parpia, Low Temperature Mechanical Properties of Boron-Doped Silicon, Phys. Rev. Lett. 68 (1992) 3052. [13] C. L. Spiel, R. O. Pohl, Normal modes of a Si(100) double-paddle oscillator, Rev. Sci. Instrum. 72 (2001) 1482. [14] R. N. Kleiman et al., Two-Level Systems Observed in the Mechanical Properties of Single-Crystal Silicon at Low Temperatures, Phys. Rev. Lett. 59 (1987) 2079. [15] J. P. Zendri et al., Loss budget of a setup for measuring mechanical dissipations of silicon wafers between 300 and 4 K, Rev. Sci. Instrum. 79 (2008) 033901. [16] R. Nawrodt et al., High mechanical Q-factor measurements on silicon bulk samples, J. Phys.: Conf. Ser. 122 (2008) 012008. [17] D. F. McGuigan et al., Measurements of the Mechanical Q of Single-Crystal Silicon at Low Temperatures, J. Low. Temp. Phys. 30 (1978) 621. Nawrodt, Genoa 09/2009

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