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The AGIPD Detector for the European XFEL

The AGIPD Detector for the European XFEL

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The AGIPD Detector for the European XFEL

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  1. The AGIPD Detector for the European XFEL Julian Becker (DESY), Roberto Dinapoli (PSI), Peter Goettlicher (DESY), Heinz Graafsma (DESY), Dominic Greiffenberg (PSI), Marcus Gronewald (U Bonn), Beat Henrich (PSI), Helmut Hirsemann (DESY), Stefanie Jack (DESY), Robert Klanner (U Hamburg), Hans Krueger (U Bonn), Alessandro Marras (DESY), Aldo Mozzanica (PSI), Bernd Schmitt (PSI), Xintian Shi (PSI), Ulrich Trunk (DESY), Jiaguo Zhang (U Hamburg)

  2. XFEL -Detector Requirements Unique time structure of the beam: • 600 µs long bunch trains • at a repeatition rate of • 10 Hz • Each train consists of • 2700 bunches with a • separation of 220 ns • (SASE) Each bunch • consists of ~1012 photons • arriving <100 fs • Other specifications: • 27000 X-ray flashes per sec • Wavelength: 0.1 .. 6 nm • (12.4 .. 0.2 keV) • Peak Brilliance: 5.1033ph/(s.mm2.rad2. 0,1% bandwidth)

  3. XFEL -Detector Requirements Approach Charge integration Beam provides Simultaneous deposition of all photons Challenges Single photon counting not possible • Dynamic range • of the detector: • 0 … <104 ph/pixel Dynamic gain switichng  3 gain stages  Single photon counting capability for highest gain • High number • of bunches • 2700 bunches • per train (600 µs) Analog storage on >200 storage cells Reading out of single frames impossible

  4. AGIPD - Design

  5. The AGIPD Detector • Specifications • 1 Mpixel • 16 modules (4 x 4) • 1 module:8 x 2 chips, •  1 chip:64 x 64 pixel • Pixel size: • 200 x 200 µm2 • Sensor: • 500 µm thick Si • Hole for direct beam • Active cooling 8 chips 2 chips 64 x 64 pixels 4 modules

  6. AGIPD - Prototypes AGIPD 0.2 AGIPD 0.1 AGIPD 0.3 • No pixels yet • 3 readout blocks • consisting of: •  Readout chain • (Preamp + CDS stage) • 3 different kinds of • leakage current • compensation • 16 x 16 pixels • 100 storage cells • No leakage current • compensation • Different combinations of preamps and storage cell architechures • 16 x 16 pixels • 200 storage cells • Radiation hard storage • cell design • High speed serial • control logic

  7. AGIPD – Characterization AGIPD 0.2 AGIPD 0.1 AGIPD 0.3 • Linearity of the gain • Stress-test of the • input gate at the • preamp • Temporal behavior of • the preamp and CDS • stage • Energy calibration • Noise determination • Pixel-to-Pixel • variations • Storage cells variations • First imaging • Radiation hardness of • storage cells • Test of the high speed • serial control logic Okay! Ongoing Okay!

  8. AGIPD 0.1 - Linearity of the gain(before stress-test) • Linearity test using a pulser applying voltage pulses on a 11 pF input • capacitance: •  A voltage pulse of 1 V corresponds to an equivalent charge of • ~20000 x 12 keV photons •  Pulsing with 1 kHz for 1 hour: 3.6 106 x 20k 12 keV photons • Rise time of the pulse: 5 ns

  9. AGIPD 0.1 - Linearity of the gain(before stress-test) High gainstage: 0.35 % (rms) 0.27 x 12 keV ph. (max) (range: 7 .. 51 x 12 keV ph.) Medium gainstage: 0.15 % (rms) 2.6 x 12 keV ph. (max) (range: 360 .. 1500 x 12 keV ph.) Low gainstage: 0.13 % (rms) 11.8 x 12 keV ph. (max) (range: 2000 .. 7000 x 12 keV ph)

  10. AGIPD 0.1 - Linearity of the gain(before stress-test)  Linearity < 1% for whole dynamic range!

  11. AGIPD 0.1 - Linearity of the gain(after stress-test)

  12. AGIPD 0.1 -Linearity of the gain(after stress-test) Are the pulses arriving fast enough? How does the switching look like?

  13. Direct measurements (Preamp/CDS)High gainstage • Resumee: • Risetime of • pulser is 5 ns • Preamp and • CDS are • properly working • within ~50 ns No switching

  14. Direct measurements (Preamp/CDS)Medium gainstage 1x switching

  15. Direct measurements (Preamp/CDS)Low gainstage 2x switchings

  16. Direct measurements (Preamp/CDS)Low gainstage • Resumee: • Preamp and • CDS are • properly working • within ~50 ns, • also when gain • switching 1x and • 2x 2x switchings

  17. AGIPD 0.2 – Energy calibration • Energy calibration done using X-ray fluorescence from Ge (10 keV), Mo • (17.5 keV) and Sn (25 keV) • Integration time was 1 s • Sensor voltage 120 V • 600000 frames investigated per photon energy Ge (10 keV) Mo (17.5 keV) Sn (25 keV) Nonlog scale to demonstrate low number of fluorescence photons!

  18. AGIPD 0.2 – Energy calibration / Noise • Noise measurements with an integration time of 100 ns reveal a value of (1.15 ± 0.11) keV, corresponding to an ENC of (318 ± 30) e-

  19. AGIPD 0.2 – Pixel-to-Pixel variations  Pixel-to-pixel variations of the gain: ~ ± 1.9 % (rms)

  20. AGIPD 0.2 – Imaging: the „A“

  21. Summary • AGIPD 0.1 • Linearity better than 1 % for all • gain stages • Input gate stress-test revealed no • degradation neither in gain nor in • linearity after extensive pulsing • with an equivalent of up to 7.108 x • 1.1.105 12 keV photons • Rise time of the preamp and CDS • ~ 50 ns (within expectations) • AGIPD 0.2 • Noise: (1.15 ± 0.11) keV • = ENC of (318 ± 30) e- • Single photon resolution • demonstrated for high gain • stage • Pixel-to-Pixel variations: ± 1.9 % • (rms) • Storage Cell variations: ± 0.65 % • (with simple • correction algorithm): ± 0.01 % • Imaging capability shown

  22. Thank you on behalf of the AGIPD Team

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