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Hole mobility in semiconductor nanowires : temperature and strain effects

Hole mobility in semiconductor nanowires : temperature and strain effects. Mariama Rebello de Sousa Dias Advisor : Prof. Dr. Victor Lopez Richard . Sumary. Electron phonon interaction via deformation potential; Interaction potential; Matrix element calculation; Deformation Potential;

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Hole mobility in semiconductor nanowires : temperature and strain effects

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  1. Hole mobility in semiconductor nanowires:temperature and strain effects Mariama Rebello de Sousa Dias Advisor: Prof. Dr. Victor Lopez Richard

  2. Sumary • Electron phonon interaction via deformation potential; • Interaction potential; • Matrix element calculation; • Deformation Potential; • Transition Rate; • Lifetime; • Mobility; • Strain; • Results; • Molecular Dynamics Simulation.

  3. Electron phonon interaction via deformation potential; Interaction potential Wave function of an infinite nanowire:

  4. Interaction element calculation

  5. Deformation Potential where and are proportional to For the conduction band For the valence band In thedirection [001] • couples with

  6. So, Transition Rate Calculation Replacethe Dirac delta by a Lorentzian,

  7. And using the momentum conservation, a b c

  8. Lifetime Calculation C Mobility

  9. Strain Subband HH Displacment Subband HL where Spin-orbit split-off energy Deformation Potential Elastic moduli

  10. Results

  11. Molecular Dynamics simulation • Will provide values of strain field distribution in the wires

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