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Electrical Tests on GaN devices

Electrical Tests on GaN devices. Giorgio Spiazzi University of Padova Dept. of Information Engineering – DEI. i L. L. +. V CC. C F. DUT. DRIVER. R s. I o (t). Dynamic circuit test. Goal:

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Electrical Tests on GaN devices

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  1. Electrical Tests on GaN devices Giorgio Spiazzi University of Padova Dept. of Information Engineering – DEI

  2. iL L + VCC CF DUT DRIVER Rs Io(t) Dynamic circuit test • Goal: • Simultaneous measurement of device voltage and current during switching intervals with an inductive load

  3. iL L + VCC CF DUT DRIVER Rs Io(t) Dynamic circuit test VDS measurement Vpol Vmis

  4. EPC 2015: VDS and IDS VDC = 20V, IDS = 10A, Vgate = 5V, Ton = 412 ms IDS [2 A/div] VDS [21 mV/div] VDS [21 mV/div] Voltage measured with clamp circuit and 21:1 coaxial probe

  5. DYNAMIC RDSon 1 10 0 10 4 devices -1 [W] 10 -2 10 RDSon = 4 mW -3 10 0 1 2 3 4 Time [s] -4 x 10 Dynamic RDSon: EPC 2015 (40 V) VCC = 20 V, fsw = 5 Hz

  6. VGS [1 V/div] IDS [2 A/div] VDS [105 mV/div] EPC 2010: VDS and IDS VDC = 160V, IDS = 16A, Vgate = 5V, Ton = 55.8 ms. Voltage measured with clamp circuit and 21:1 coaxial probe

  7. 1 10 0 10 -1 10 -2 10 0 1 2 3 4 5 6 7 8 -5 x 10 Dynamic RDSon : EPC 1010 (200 V) VCC = 80 V, fsw = 5 Hz DYNAMIC RDSon 4 devices [W] RDSon = 25 mW Time [s]

  8. DYNAMIC RDSon 1 10 0 120 V 10 [W] 4 dispositivi misurati 160 V -1 10 80 V RDSon = 25 mW -2 10 0 1 2 3 4 5 6 Time [s] -5 x 10 Dynamic RDSon: EPC 2010_06 (200 V) VCC = 80-120-160 V, fsw = 5 Hz

  9. GaN radiation test Irradiation with 3-MeV protons at difference fluence (1-4∙1014 p/cm2) EPC2015 (VDMAX=40V) #1  1E14 p/cm2 #2  2E14 p/cm2 #6  3E14 p/cm2 #7  4E14p/cm2 EPC2010 (VDMAX=200V) #5  3E14 p/cm2 #6  1E14 p/cm2

  10. EPC 2010 #6 (1E14 p/cm2 ) Floating Drain. VGS swept from 0 to -4V and back to zero. Then, from 0 to +4V and back to zero again

  11. EPC 2010 #6 (1E14 p/cm2 ) Drain connected to a 0.5V voltage generator. Gate voltage swept from 0 to 3V (for any VGS value a pulsed measurement is taken so as to avoid device heating)

  12. EPC 2010 #6 (1E14 p/cm2 ) VGS=3V VGS=2V VGS=1V

  13. EPC 2010 #5 (3E14 p/cm2 )

  14. EPC 2010 #5 (3E14 p/cm2 )

  15. EPC 2010 #5 (3E14 p/cm2 ) VGS=3V VGS=2V VGS=1V

  16. EPC 2015 #1 (1E14 p/cm2 )

  17. EPC 2015 #1 (1E14 p/cm2 )

  18. EPC 2015 #1 (1E14 p/cm2 ) VGS=3V VGS=2V VGS=1V

  19. EPC 2015 #2 (2E14 p/cm2 )

  20. EPC 2015 #2 (2E14 p/cm2 )

  21. EPC 2015 #2 (2E14 p/cm2 ) VGS=3V VGS=2V VGS=1V

  22. Irradiation results After irradiation with 3-MeV protons at the highest fluence (4∙1014 p/cm2), the devices exhibited an increase of up to one order of magnitude in gate leakage, almost 1 V of threshold voltage reduction, degradation of the subthreshold slope, and drop in transconductance

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