1 / 1

Validity of the Top of the Barrier model for Quantum Transport in Nanowire MOSFETs.

Validity of the Top of the Barrier model for Quantum Transport in Nanowire MOSFETs. Objective: Find valid device regime for Top of the barrier (ToB) model. Determine the factors that decide this regime. Results:. I D -V G from 2D ToB (with DIBL) ‏

lynde
Download Presentation

Validity of the Top of the Barrier model for Quantum Transport in Nanowire MOSFETs.

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Validity of the Top of the Barrier model for Quantum Transport in Nanowire MOSFETs. • Objective: • Find valid device regime for Top of the barrier (ToB) model. • Determine the factors that decide this regime. Results: ID-VG from 2D ToB (with DIBL)‏ matches quite well with 3D OMEN result for [100] wire with Lc = 15nm and W = H = 3nm. Approach : 2D ToB simulation time is less compared to 3D. Speedup is very rapid for larger cross-section devices. [a] (a) Self-consistency. (b) Flowchart of procedure • Impact: • 2D ToB a very reliable device model : • For longer channel length device. • Less compute time and lower memory requirements compared to 3D model. • Results presented in IWCE, 2009 [P109]. • 2 conditions must when ToB matches 3D : • Presence of source-channel barrier(>KT) • Very less S/D tunneling => long Lc devices • Lc>=(5 *wire diameter) good device regime for ToB model.

More Related