INTEGRATED CIRCUITS. Dr. Esam Yosry. Lec . #4. Introduction Ion Implantation Process Advantages Compared to Diffusion Disadvantages Compared to Diffusion Implantation Doping Profiles Compared to Diffusion Implantation Doping Profiles Parameters Multiple Implant Process
Amount of dose and profile (position and area) are accurately obtainable.
By low doping we can make fine tune the values of some electrical parameters.
Placing the peak anywhere under the wafer surface.
The growth of masking oxide layer is no longer needed. Also low temperature processing allows us to maintain the shape of any previously introduced profiles.
Dopant ions have no momentum in the horizontal direction.
Projected range (mean penetration depth)
Higher implantation energy Ξ deeper penetration Rp and wider distribution ∆ Rp
Many thanks to Prof. Hany Fikry and Prof WaelFikry for their useful materials that help me to prepare this presentation.