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Marta Baselga , Colin Parker & Hartmut Sadrozinski SCIPP, UC Santa Cruz

Strips : p+ implant responsible for charge multiplication covers only part of the strip . Investigate extension of p+ to cover the entire sensor and topush it deeper into the bulk. Marta Baselga , Colin Parker & Hartmut Sadrozinski SCIPP, UC Santa Cruz. Strip detectors Pitch p=80 m m.

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Marta Baselga , Colin Parker & Hartmut Sadrozinski SCIPP, UC Santa Cruz

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  1. Strips: p+ implantresponsibleforchargemultiplicationcoversonlypart of thestrip.Investigateextension of p+ tocovertheentire sensor and topushitdeeperintothebulk Marta Baselga, Colin Parker & Hartmut Sadrozinski SCIPP, UC Santa Cruz

  2. Strip detectorsPitch p=80 mm

  3. Pitch=80mm Float Zone 285mm Pitch=80mm 10mm Epitaxial wafer Low resistivity substrate wafer 525mm

  4. Pitch 80um n++ pstop P+ multiplicationimplant pstop AC3 24mm AC6 48mm AC9 62mm

  5. REGULAR STRIPS AC6

  6. Regular Strips(AC 6 FZ Deepannealing)

  7. Electric field of regular strips @1000V(AC 6 FZ Deepannealing)

  8. IV and CV for regular strips(AC 6 FZ Deepannealing)

  9. NEW STRIPS Doping boronpeak 1e15cm^-3 boron at 2um

  10. New strips (boron at 2um fromthesurface) doping boron 1e15cm^-3

  11. New stripselectricfield @1000V doping boron 1e15cm^-3 @2um

  12. IV and CV forstripswithboron @ 2umboron doping 1e15cm^-3

  13. NEW STRIPS Doping boronpeak 1e15cm^-3 at 5um deep

  14. New strips (boron at 5um fromthesurface) doping boron 1e15cm^-3

  15. New stripselectricfield @1000V doping boron 1e15cm^-3

  16. IV and CV forstripswithboron @ 5umboron doping 1e15cm^-3

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