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Yale University, New Haven, CT USA Brookhaven National Laboratory, Upton, NY USA Rutherford Appleton Laboratory, Chilton, Didcot, UK PowerPoint PPT Presentation


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Yale University, New Haven, CT USA Brookhaven National Laboratory, Upton, NY USA Rutherford Appleton Laboratory, Chilton, Didcot, UK National Semiconductor Corp, Richardson, TX, USA New York University, New York, NY, USA. IEEE Nuclear Science Symposium, Orlando, FL USA 25-31 October, 2009.

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Yale University, New Haven, CT USA Brookhaven National Laboratory, Upton, NY USA Rutherford Appleton Laboratory, Chilton, Didcot, UK

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Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Yale University, New Haven, CT USA

Brookhaven National Laboratory, Upton, NY USA

Rutherford Appleton Laboratory, Chilton, Didcot, UK

National Semiconductor Corp, Richardson, TX, USA

New York University, New York, NY, USA

IEEE Nuclear Science Symposium, Orlando, FL USA 25-31 October, 2009


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Length of Power Cables = 140 Meters

4088 Cables

3.5 V

Cable Resistance = 4.5 Ohms

10 Chip Hybrid – SCT Module for LHC

10.25 V

1.5 amps

Voltage Drop = 6.75 V

Counting

House

1.3 V

20 Chip Hybrid – Si Tr

Module for Hi Luminosity

12.1V

Voltage Drop = 10.8V

2.4 amps

X 10

DC-DC

Power Converter

1.3 V

13 V

20 Chip Hybrid – Si Tr

Module for Hi Luminosity

14.08 V

Voltage Drop = 1.08 V

2.4 amps

0.24 amps


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Agenda

  • Learning from Commercial Devices

  • Buck > Voltage, EMI

  • Plug In Cards for ABCN2.5 Hybrids - Noise Tests @Liverpool

  • Require Radiation resistance & High Voltage operation

  • Thin Oxide

  • High Voltage with Thin Oxide ?

  • DMOS, Drain Extension 12V @ 5 nm , 20V @ 7 nm

  • HEMT has no Oxide – Higher Voltage ? 200 Mrads 20V


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Synchronous Buck Converter

100

nsec

900

nsec

10 V

1 V


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Enpirion EN5360

  • Found out at Power Technology conference 0.25 µm Lithography

  • Irradiated Stopped on St. Valentines Day 2007

  • No effects after 100 Mrads

  • Noise tests at Yale, RAL & BNL.

  • 20 µm Al is good shield for Air Coils

  • All other devices failed, even other part numbers from Enpirion

  • We reported @ TWEPP 2008 - IHP was foundry for EN5360

  • What makes Radiation Hardness ?

  • Chinese Company Devices


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

What Makes it Rad Resistant ?

Empirical Evidence: Deep submicron

But what why?


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

What Makes it Rad Resistant ?

We say thin Gate Oxide is a

necessary Condition


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Tunneling Region

Thickness ~ 5 nm

Oxide Trap Region

+

+

+

Fixed Charge

States

Switching Charge

States

V

GND

+

+

+

+

+

Gate

Oxide

Si

Book ‘Ionizing Radiation Effects in MOS Oxides’ Author Timothy R. Oldham


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Can We Have

High Radiation Tolerance & Higher Voltage Together ???

Controller : Low Voltage

High Voltage: Switches –

LDMOS, Drain Extension, Deep Diffusion etc

>> 20 Volts HEMT GaN on Silicon, Silicon Carbide, Sapphire


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

LDMOS Structure

Laterally Diffused

Drain Extension

High Voltage / high Frequency

Main market. Cellular base stations

High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 μm SiGe:C BiCMOS technology: IHP Microelectronics

Electron Devices Meeting, 2001. IEDM Technical Digest. International2-5 Dec. 2001 Page(s):40.4.1 - 40.4.4


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

R. Sorge et al , IHP Proceedings of SIRF 2008 Conference

High Voltage Complementary Epi Free LDMOS Module with 70 V

PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Non IBM Foundry ICs


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Enhancement Mode

Normally OFF

Depletion Mode

Normally ON


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

GaN for Power Switching


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Gallium Nitride Devices under Tests

  • RF GaN 20 Volts & 0.1 amp

  • 8 pieces: Nitronex NPT 25015: GaN on Silicon

  • Done Gamma, Proton & Neutrons

  • 65 volts Oct 2009

  • 2 pieces: CREE CGH40010F: GaN on siC

  • 6 pieces: Eudyna EGNB010MK: GaN on siC

  • Done Neutrons

    Switch GaN

  • International Rectifier GaN on Silicon

    Under NDA

Gamma: @ BNL

Protons: @ Lansce

Neutrons: @ U of Mass Lowell

Plan to Expose same device to

Gamma, Protons & Neutrons


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

200 Mrads of Protons had no effect – switching 20 V 0.1 Amp

Parts still activated


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Plug In Card with Shielded Buck Inductor

Coupled Air Core Inductor

Connected in Series

0.35 mm

1.5 mm

Inductance ~ 0.6 µH

2.5 V

@ 6 amps

12 V

Spiral Coils Resistance in mΩ

Replace pcb coil with copper foil


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Hybrid in Thermal Shield

Noise

Same with Linear or DC - DC

Shield 20 µm Al Foil

Noise

NO change with

Plug in card

on top

Sensor 1 cm from Coil


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

IR’s basic current GaN-on-Si based device structure is a high electron mobility transistor (HEMT), based on the presence of a two dimensional electron gas (2DEG) spontaneously formed by the intimacy of a thin layer of AlGaN on a high quality GaN surface as shown in Figure 1. It is obvious that the native nature of this device structure is a HFET with a high electron mobility channel and conducts in the absence of applied voltage (normally on). Several techniques have been developed to provide a built-in modification of the 2DEG under the gated region that permits normally off behavior.

Aside from providing high quality, reliable and a low-cost CMOS compatible device manufacturing process, the GaNpowIR technology platform also delivers dramatic improvements in three basic figures of merit (FOMs), namely specific on-resistance RDS(on), RDS(on)*Qg and efficiency*density/cost.


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

  • Conclusions

  • Learned from commercial Devices,

    Companies & Power conferences

  • Can get high Radiation Tolerance & Higher Voltage

  • High Frequency > Smaller Air coil > Less Material

  • Goal: ~20 MHz Buck, MEM on Chip size 9 mm x 9mm

  • Power SOC: MEMs Air Core Inductor on Chip

  • Study Feasibility 48 / 300V Converters

  • Irradiation: Run @ Max operating V & I.

    • Limit Power Dissipation by Switching duty cycle

  • Online Monitoring during irradiation for faster results

  • Yale Plug Cards can be loaned for Evaluation

  • Collaborators are Welcome


Yale university new haven ct usa brookhaven national laboratory upton ny usa rutherford appleton laboratory chilton

Working on Power Supply

Is not Glamorous

Neither it on Top of the World for ?

More Details:www.Yale.edu/FASTCAMAC click on DC-DC


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