Chapter iii semiconductor devices
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Chapter III Semiconductor Devices. 半導體元件. Basic Building Blocks of Semiconductor Devices. ( a) M-S Junction (b) P-N Junction (c) Heterojuction (d) MOS structure. Metal-Semiconductor Contact. Schottky contact Rectifying contact Schottky Barrier M-S devices Unipolar devices

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Chapter III Semiconductor Devices

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Chapter iii semiconductor devices

Chapter IIISemiconductor Devices

半導體元件


Basic building blocks of semiconductor devices

Basic Building Blocks of Semiconductor Devices

(a) M-S Junction (b) P-N Junction (c) Heterojuction (d) MOS structure


Metal semiconductor contact

Metal-Semiconductor Contact

  • Schottky contact

    • Rectifying contact

    • Schottky Barrier

    • M-S devices

    • Unipolar devices

    • High-speed devices

  • Ohmic contact

    • Non-rectifying contact

    • Specific contact resistance

    • The apace charge width in a M-S contact is inversely proportional to the square root of the semiconductor doping.The probability of tunneling through the barrier increases with the increasing doping concentration.

    • Electrodes

Energy-band diagram of a heavily doped n-semiconductor-to-metal junction


Schottky barrier diode

Schottky-Barrier Diode

  • M-S junction device

  • Unipolar device

  • Majority-carrier device

  • Without minority- carrier-storage effect

  • III-V compound semiconductors (GaAs)

  • Properities of devices:

    • High operation speed

    • Lower cut-in voltage

    • Higher saturation current


The p n diode under thermal equilibrium

The P-N Diode --- Under Thermal Equilibrium

P-type and N-type semiconductors before and after the junction formed

A p-n junction with abrupt doping charges at the metallurgical junction


The p n diode under biasing conditions

The P-N Diode --- Under Biasing Conditions

Current-voltage characteristics of a typical Si p-n junction

  • Thermal equilibrium

  • Forward-bias condition.

  • Reverse-bias condition


Classification of semiconductor devices

Classification of Semiconductor Devices

  • Bipolar Devices

    • P-N Junction Diode

    • Bipolar Junction Transistor (BJT)

    • Heterojunction Bipolar Transistor (HBT)

    • Thyristor and related power devices

  • Unipolar Devices

    • Schottky-barrier diode (SBD)

    • Junction Field Effect Transistor (JFET)

    • Metal-Oxide-Semiconductor FET (MOSFET)

    • MOS Diode (Capacitor)

    • Complementary MOS (CMOS)  BiMOS and BiCMOS

    • Power MOS

  • High-Speed Devices

    • Metal-Semiconductor FET (MESFET)

    • Modulation-Doped FET (MODFET), High-Electron-Mobility Transistor (HEMT)


Semiconductor devices continued

Semiconductor Devices (continued)

  • Microwave Devices

    • Tunnel diode

    • IMPATT diode

    • Transferred-Electron Device (TED)

    • Quantum-Effect Devices

    • Hot-Electron Devices

  • Photonic Devices

    • Light Emitting Diode (LED)

    • Semiconductor Laser (Laser Diode, LD)

    • Photodetector

      • Photodiode (PD), Avalanche Photodiode (APD)

      • Phototransistor (PT)

    • Solar Cell

    • Display Devices

      • Thin-Film Transistor LCD (TFT-LCD)

      • Organic Electroluminescence Display (OELD) or Organic Light Emitting Diode (OLED)


Semiconductor devices continued1

Semiconductor Devices (continued)

  • Integrated Devices

    • Passive Components

      • IC Resistor, IC Capacitor, IC Inductor

    • MOS Menory

      • Dynamic Random Access Memory (DRAM)

      • Static Random Access Memory (SRAM)

      • Nonvolatile Memory

      • Erasable-Programmable Read-Only Memory (EPROM)

      • Electrically Erasable-Programmable Read-Only Memory (EEPROM)

      • Flash Memory

      • Single-Electron Memory

  • MEMS devices


The bipolar junction transistor bjt

The Bipolar Junction Transistor (BJT)


The mosfet

The MOSFET


The cmos

The CMOS


Chapter iii semiconductor devices

MESFET

Schottky Contact

Ohmic Contact

To minimize parasitic capacitances

Mesa Structure


Chapter iii semiconductor devices

MODFET

  • Modulation Doped FET

    • A thin undoped well bounded by two wider bandgap doped barrier

  • HFET (Heterojunction FET)

  • 2DEG FET or TEGFET,

  • SEDFET (Separately Doped FET)

  • Advantages:

    • Extremely high cutoff frequency and fast access time


Chapter iii semiconductor devices

HEMT

  • HEMT:

    • High Electron Mobility Transistor

    • 250,000 cm2/V-s at 77K

    • 2,000,000 cm2/V-s at 4K

  • Why HEMT?

    • In conventional MESFET:

      Channel doping carrier number 

      But mobility (impurity scattering)

       conductivity is limited (  = q n )

    • For HEMT:

      Sheet carrier density is as high as 1012 cm-2 (~1020cm-3 for 10-nm thick channel layer)


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