Loading in 5 sec....

Semiconductor Modeling And Test Chip Design for Characterization of Radiation EffectsPowerPoint Presentation

Semiconductor Modeling And Test Chip Design for Characterization of Radiation Effects

- By
**kasie** - Follow User

- 141 Views
- Uploaded on

Download Presentation
## PowerPoint Slideshow about ' Semiconductor Modeling And Test Chip Design for Characterization of Radiation Effects' - kasie

**An Image/Link below is provided (as is) to download presentation**

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.

- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -

Presentation Transcript

Semiconductor Modeling And Test Chip Design for Characterization of Radiation Effects

Sotiris Athanasiou

National Trainee, TEC-EDM

Supervisors:

Boris Glass, Richard Jansen

SCOPE Characterization of Radiation Effects

Radiation Effects

Semiconductor Modeling

- TCAD modeling and Doping problem
- Compact Models and extensions on verilogA
Test Chip

- Muxes
- Test Structures
- WideBand Amplifier
- Layout

Rad Effects on SRAM FPGA designs| Sotiris Athanasiou | ESTEC,NL| Data doc | Presentation| Pag. 2

Radiation Effects Characterization of Radiation Effects

Space is a difficult place for electronics to operate!

Ionized Particles and protons hit the device:

TID

SEE

SEU,MBU,SEFI,SEL,SEB,SEGR,SET

Space engineering,

Techniques for Radiation Effects Mitigation in ASICs and FPGAs

European Space Agency

Space engineering,

Calculation of radiation and its effects and margin policy handbook

European Space Agency

Rad Effects on SRAM FPGA designs| Sotiris Athanasiou | ESTEC,NL| Data doc | Presentation| Pag. 3

Total Ionizing Dose Characterization of Radiation Effects

TID creates trapped charge in the MOS structure in MOSFET:

- Vth Shift
- TID leakage currents

Single Event Transient Characterization of Radiation Effects

More complex phenomena:

a)A plasma track with e-h pairs is created

b)A path of free carriers between p and n areas – funnel

c)Charge generated outside diffuses to junction

Why this work Characterization of Radiation Effects

Usually testing is done afterwards more on gate level, and less on transistor level.

Radiation effects not available in simulation of space electronics.

Same concept at ESD design

- Requires Technology information for simulation

TCAD model towards electrical behavior under radiation 1/3 Characterization of Radiation Effects

TCAD commercial software extended with Geant4 (high energy physics simulator)

Technology

parameters

Electrical behavior under radiation

3d Mesh

Geant4 simulations

GDSII

TCAD model towards electrical behavior under radiation 2/3 Characterization of Radiation Effects

Correctness of Technology parameters:

Technology

parameters

/home/soathana/Desktop/TCAD/IdVd.png

/home/soathana/Desktop/TCAD/IdVd.png

/home/soathana/Desktop/TCAD/IdVd.png

/home/soathana/Desktop/TCAD/IdVd.png

TCAD model

Drift diffusion simulation

Spice simulation

Foundry spice model

results

TCAD model towards electrical behavior under radiation 3/3 Characterization of Radiation Effects

TCAD modeling:

Technology parameters extracted from DESMICREX study

And foundry PDK info

a)Major problem remains Doping profiles 1D vs 3D

Without foundry access it is difficult to obtain Doping.

Methods exist to extract from electrical behavior doping, with some accuracy rely on development of custom code.

b)Luck of methodology on parameters to match

Compact Models 1/4 Characterization of Radiation Effects

Compact Model approach to overcome these issues

Umc 90 nm PDK BSIM4 Compact Model

Use of Silvaco VerilogA BSIM4 implementation

- Model card extraction into VerilogA model
- Fix errors/ remove unused code
- Implement SET, TID leakage into modified model
- simulate

Compact Models 2/4 Characterization of Radiation Effects

VerilogA electrical behavior against cadence implementation.

Tested against dedicated Matlab model.

A lot of interesting issues arise regarding to what

extent parameters need to be matched IV, CV,

Vth, Idiode e.t.c.

Compact Model Approach offers a lot of

advantages:

1)Access to equation parameters as well as device parameters

2)Better behavior with respect to paracitics

3)No circuit modifications

4)Foundry sensitive parameters not required

Compact Models 3/4 Characterization of Radiation Effects

compact model SET simulation compact model TID leakage simulation

Compact Models 4/4 Characterization of Radiation Effects

- Parameters extracted from relevant available publications
- This does gives an indication but not specific values.
- Data can lead to predictions but in some cases can lead to over/under estimating the behavior
- Need experimental results to fine tune the equations (parameter extraction)

Characterization Test Chip and compact model modification Characterization of Radiation Effects

Umc180 example, substrate resistor network.

rbodyMod = 0 (Off)

rbodyMod = 1 (On)

rbodyMod = 2 (On : Scalable Substrate Network): {5R/3R/1R}

Does rbodyMod 0 means no res?

NO!

Characterization Test Chip Design Characterization of Radiation Effects

Must have a large number of devices to characterize

Minimum number of pins possible

Must facilitate a large number of measurements

MUX architecture

Characterization Test Chip Design Characterization of Radiation Effects

1K devices of each type, placed in 5 rows of 200

- Investigate charge sharing
Possible types of measurements

- CV
- IV
- Noise
- Matching
- TID leakage
- SET pulse
- 4 terminal (Kelvin) measurements

Characterization Test Chip Design Characterization of Radiation Effects

Wide Band Amplifier to test behavior under high frequencies.

Extract SET pulse shape for first time.

Characterization Test Chip Design Characterization of Radiation Effects

Building test benches to test functionality

A.D. OP27 behavioral model for simulation purposes

Characterization Test Chip layout Characterization of Radiation Effects

Test Structures

-generated automatically through cadence SKILL

-Each block contains 14K DUTs

Characterization Test Chip layout Characterization of Radiation Effects

MUX layout

Future Work Characterization of Radiation Effects

Finalize Test Chip->Tape out

Measurements

Fitting Measurement data to Models-> extract parameters

Insert parameters back to models

Once proof of concept verified, can easily generate new test structures and fabricate next characterization chips.

Rad Effects on SRAM FPGA designs| Sotiris Athanasiou | ESTEC,NL| Data doc | Presentation| Pag. 21

Download Presentation

Connecting to Server..