Vip1 a 3d integrated circuit for pixel applications in high energy physics
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VIP1: a 3D Integrated Circuit for Pixel Applications in High Energy Physics. Jim Hoff*, Grzegorz Deptuch, Tom Zimmerman, Ray Yarema - Fermilab * [email protected] Vertical Integration (a.k.a. 3D Integration)– What is it?. Several active semiconductor layers “independently” designed

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Vip1 a 3d integrated circuit for pixel applications in high energy physics

VIP1: a 3D Integrated Circuit for Pixel Applications in High Energy Physics

Jim Hoff*, Grzegorz Deptuch, Tom Zimmerman, Ray Yarema - Fermilab

* [email protected]


Vertical integration a k a 3d integration what is it
Vertical Integration (a.k.a. 3D Integration)– Energy PhysicsWhat is it?

  • Several active semiconductor layers “independently” designed

    • Not necessarily the same function

    • Not necessarily the same technology

  • Thinned

  • Bonded together

  • Interconnected to one another with deep vias


Vertical integration a k a 3d integration what is it1

3D vias Energy Physics

8.2 µm

7.8 µm

6.0 µm

Vertical Integration (a.k.a. 3D Integration)– What is it?


Vertical integration a k a 3d integration what is it2
Vertical Integration (a.k.a. 3D Integration)– Energy PhysicsWhat is it?

J. Joly, LETI

  • Industry’s Interest in Vertical Integration

  • Moore’s Law

  • Reduce R, L, C for higher speed

  • Reduce chip I/O pads

  • Provide increased functionality

  • Reduce interconnect power and crosstalk

  • HEP’s Interest in Vertical Integration

  • Reduced Mass in the Beamline

  • Selectable detector and readout technologies

  • Increased functionality per unit area at a given feature size


Vip1 what is it
VIP1: What is it? Energy Physics

The VIP1 is a 64x64 demonstrator version of a 1k x 1k readout chip for ILC pixel vertex applications. It is designed to conform to ILC standards as they are understood today.

Features

  • 20 mm x 20 mm pixel size

  • Binary (hit/no hit) information with analog hit information to improve resolution

  • Double Correlated Sampling

  • Both analog and digital time stamping, each individually capable of resolving 32 time steps per bunch train.

  • Readout between bunch trains

  • Data sparsification with pipelined token passing

  • A single point-to-point serial output line

  • Design for megapixel array, but layout a 64x64 array

  • Low power (assuming power pulsing is used)

  • A Test input per pixel




Conversion to a 3d architecture

Inter-tier vias are substantial Energy Physics

Logical versus physical division of function

Layout on one tier impacts layout on other tiers.

Conversion to a 3D architecture


The pixel cell on tier 1

X, Y line Energy Physics

control

OR, SR FF

Tier 3

analog

Token

passing logic

3D

vias

D FF

Tier 2

Time

Stamp

Test input

circuit

Tier 1

Data

sparsification

The Pixel Cell on Tier 1

  • SR-ff for hit storage for the duration of the pulse train.

  • OR to allow universal read

  • Conservative, static, edge-triggered DFF in data sparsification.

  • Dynamic edge-triggered DFF for test input pulses

  • 65 transistors


The pixel cell on tier 2

b3 Energy Physics

Analog

T. S.

Tier 3

analog

3D

vias

b2

Tier 2

Time

Stamp

b1

b4

b0

Tier 1

Data

sparsification

The Pixel Cell on Tier 2

  • 5 bit digital timestamp latched in the pixel from a Gray Code counter on the periphery of Tier 2

  • Analog time stamp resolution to be determined, but expecting 5 bits

  • Time stamps can be used in alone or in series to create a 10 bit time stamp.

  • 72 transistors


The pixel cell on tier 3

Schmitt Energy Physics

Trigger+NOR

Integrator

Discriminator

Tier 3

analog

3D

vias

Tier 2

Time

Stamp

CTI

DCS + Readout

Tier 1

Data

sparsification

The Pixel Cell on Tier 3

  • Integrator

  • Double correlated sample plus readout

  • Discriminator

  • Chip scale programmable threshold input

  • Capacitive test input (CTI)

  • 38 transistors

  • 2 vias


3d stacking of a single pixel with vias step 1
3D Stacking (of a single pixel) with Vias Energy Physics(step 1)

Tier 1 pixel circuit

Buried oxide (BOX), 400 nm thick

2000 ohm-cm p-type substrate


3d stacking of a single pixel with vias step 2
3D Stacking (of a single pixel) with Vias Energy Physics(step 2)

Bond tier 2 to tier 1

Tier 2

Tier 1


3d stacking of a single pixel with vias step 3
3D Stacking (of a single pixel) with Vias Energy Physics(step 3)

Form 3 vias, 1.5 x 7.3 µm,

through Tier 2 to Tier 1


3d stacking of a single pixel with vias step 4
3D Stacking (of a single pixel) with Vias Energy Physics(step 4)

Bond tier 3 to tier 2

Tier 3

Tier 2


3d stacking of a single pixel with vias step 5
3D Stacking (of a single pixel) with Vias Energy Physics(step 5)

Form 2 vias, 1.5 x 7.3 µm,

through tier 3 to tier 2


A 64x64 array with perimeter logic
A 64x64 Array with Perimeter Logic Energy Physics

  • Perimeter circuitry for the ILC Demonstrator chip occupies a small amount of space.

  • Area for the perimeter logic could be reduced in future designs.

Blow up of

corner of

array

64 x 64 array with perimeter logic


Status
Status Energy Physics

  • The design was submitted in October of last year. It was due in August of this year.

  • We expect delivery any day and hope to present experimental results in the conference record or in a TNS paper.

  • This design was fabricated as part of a multi-project wafer run supported as a DARPA R&D effort. This was the second such run.

  • A third MPW run is planned for next year.


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