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射極電流擁擠效應

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射極電流擁擠效應. 授課老師 : 鄒文正 老師 學生 : 董冠璋 學號 : M99L0225. Outline. 形成原因 造成之影響 改善方法 參考文獻. 形成原因. 由於 HBT 垂直式結構,使基極電流橫向流入射極,基極電流橫向流入射極之過程產生電阻與電位差,使得基 - 射極接面的電場分布不均,而使電流由射極周圍向中心遞減,因此引起射極電流聚集在邊緣,此現象稱為射極群聚現象 (Emitter crowding) 。. 參考文獻. [1] 〝 半導體元件物理與製程技術 〞 施敏著 [2] 〝 VBIC 模型應用於不同尺寸異質接面雙載子電晶體之研究 〞 徐慧芬.

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射極電流擁擠效應

授課老師:鄒文正 老師

學生:董冠璋

學號:M99L0225

outline
Outline
  • 形成原因
  • 造成之影響
  • 改善方法
  • 參考文獻
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形成原因

由於HBT垂直式結構,使基極電流橫向流入射極,基極電流橫向流入射極之過程產生電阻與電位差,使得基-射極接面的電場分布不均,而使電流由射極周圍向中心遞減,因此引起射極電流聚集在邊緣,此現象稱為射極群聚現象(Emittercrowding)。

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參考文獻
  • [1]〝半導體元件物理與製程技術〞施敏著
  • [2] 〝VBIC模型應用於不同尺寸異質接面雙載子電晶體之研究〞 徐慧芬
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