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AID–EMC: Low Emission Digital Circuit Design

AID–EMC: Low Emission Digital Circuit Design. Update of the “Digital EMC project”. January 19th, 2006. Junfeng Zhou Wim Dehaene KULeuven ESAT-MICAS. Outline. Circuit structure 2. Maple simulation 3. Spectre simulation 4. Future work. Coupling problem !.

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AID–EMC: Low Emission Digital Circuit Design

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  1. AID–EMC: Low Emission Digital Circuit Design Update of the “Digital EMC project” January 19th, 2006 Junfeng Zhou Wim Dehaene KULeuven ESAT-MICAS

  2. Outline Circuit structure 2. Maple simulation 3. Spectre simulation 4. Future work

  3. Coupling problem ! Cgs1,2≈ Cgd1 ∆ Vbias ∆ VDD_input

  4. Why new structure ? Simple Driving capability Miller effect on compensation capacitor Cascode device: decrease coupling from VDD_input to VDD provided that Vbias is biased as a low impedance node

  5. Stability analysis φ≥60° Worst case Stability as a function of Iload (26.7u A ~ 72m A) Raux=1.852K , Caux=20p

  6. Maple calculation An input current step of 1 mA and 100-ps rise time was used for the calculation and simulation

  7. Comparison with old structure ~10reduction !! Old structure New structure

  8. Spectre simulation – TF H(s)=Idd(s)/Iout(s) Future: Theoretical Expression of TF TF as a function of Caux

  9. Relation with Gabarit ? ? emission limit example: H-12-n-O Source: from Herman Casier

  10. Emergency block and PD block Power Down block Emergency block

  11. Shift register cell 10 × 5× Determine the current peak and duration: Out Din CLK RST FF FF FF FF 50 FF + 200 gates 600 [uA] ×50 × 12= 360 [mA] Then, the output current of the special regulator : 36 [mA] ~ 72 [mA] Source: from Aarnout Wieers

  12. Top level simulation Current source simulation Frequency simulation

  13. Current source simulation of whole circuit Current of Vbat VDD after the regulator Power down enable VDD_input

  14. Current source simulation of whole circuit Current of Vbat V3v3 VDD_input Vcontrol Power down enable

  15. Frequency simulation of the whole circuit 9x106 load current 7x103 current of Vbat FFT FFT di/dt p-p =8.5x104 [A/s] di/dt p-p =1.8x109 [A/s]

  16. Layout Ctank Caux Area: 1mm x 1.1mm Ctank Ctank Ctank Ctank Ctank Ctank and Power transistors

  17. EMC test chip with special regulator SR1 RST Din CLK OUT SR2 RST Din CLK OUT SR11 RST Din CLK OUT SR12 RST Din CLK OUT On-chip LDR SR1, MS-FF, PMOS capa SR7, MS-FF, no capa, PWR on GND SR2, MS-FF, NMOS capa SR8, MS-FF, no capa, PWN next GND PD SR3, MS-FF, MIM capa SR9, MS-FF, no capa, PWR next GND LDO PD SR4, D-FF, PMOS capa SR10, D-FF, no capa, PWR on GND On-chip Serial regulator SR5, D-FF, NMOS capa SR11, D-FF, no capa, PWR next GND GND SR6, D-FF, MIM capa SR12, D-FF, no capa, PWR next GND Kelvin contact Special (KUL) regulator Ctank PD Source: from Aarnout Wieers

  18. Future work 1. • Chip measurement • Design improvement • Refine Theoretical analysis on EMC reduction and maximum current capability 2. • Continue research on the Clock strategy: SSCG

  19. Questions Thank you for your attention

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