First Nano-wire FinFETs via UV-based Nanoimprint Lithography. Nanowire fin field effect transistors via UV-based nanoimprint lithography * A. Fuchs,a M. Bender, U. Plachetka, L. Kock, T. Wahlbrink, H. D. B. Gottlob, J. K. Efavi,
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Nanowire fin field effect transistors via UV-based nanoimprint lithography*
A. Fuchs,aM. Bender, U. Plachetka, L. Kock, T. Wahlbrink, H. D. B. Gottlob, J. K. Efavi,
M. Moeller, M. Schmidt, T. Mollenhauer, C. Moormann, M. C. Lemme, and H. Kurz
Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Huyskensweg 25,
D-52074 Aachen, Germany
Nanoimprint lithography (NIL)
Conventional NIL processes, coined as stamp and step processes require thermal cycles between 140°C and 180°C and high pressures during the hot embossing procedure. Thermal and mechanical loads involved in these processes represent a nearly prohibitive burden for fast and high precision alignment. The mechanical masses to be moved in high throughput equipment require a large degree of complex mechanical handling.
UV based nanoimprint lithography (UV-NIL)
The low pressure (<1bar) as well as the absence of any thermalcycles
appears very attractive for high precision printing down to 10 nm and
relaxes the technical requirements for placement accuracy and pattern
fidelity to a large extent.
5 mm thick 1in mold used with 150nm deep features.
1. Pattern the S/D and channel structure
a. Imprint process at reduced ambient pressure 20 mbars and imprint pressure of 300mbars.
b. UV curing resist---mold detached---RIE etching
2. CVD polysilicon for gate (heavily doped)
3. Pattern the gate
4. S/D implantation (As=2 x 10E20 ions/cm^2)
Transistor output characteristics exhibits linear and saturation regions!!!
Typical field effect transistor behavior is clearly observed!!!