Tes key development issues
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TES key development Issues. Energy resolution Aim for 1 eV type resolution for E < 1 keV Field of view Increase of pixel size to typically 5/3 – 5/2 arc sec ≡ 416 - 625 μ m (settle on 500 μ m) Increase of pixels above 32 x 32 elements (wait for array and read-out developments going-on)

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TES key development Issues

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Tes key development issues

TES key development Issues

  • Energy resolution

    • Aim for 1 eV type resolution for E < 1 keV

  • Field of view

    • Increase of pixel size to typically 5/3 – 5/2 arc sec ≡ 416 - 625 μm (settle on 500 μm)

    • Increase of pixels above 32 x 32 elements (wait for array and read-out developments going-on)

  • Count rate ability

    • TES limited to approximately 0.1 ms speed

XEUS Cryogenic Instrument 26 - 27 October 2004


Tes key development issues1

Energy resolution limit is given by:

TES key development Issues

with ESAT given by

Measured value of EFWHM = 4 eV for C = 0.5pJ/K, α = 70, and T = 100 mK is a factor 3 worse than theory. This is partially due to excess noise and partially due to non-optimum data analysis algorithm. A better data-analysis algorithm should result in 2.5 – 3 eV.

Saturation energy equals ≈ 10 keV for r = 0.1

Reduction of the saturation energy to 2.5 keV, C ≈ 1.25 10-13 J/K, would therefore result in an energy resolution improvement by a factor 2.0

Present schemes would than result in ≈ 2 eV energy resolution, while with better data analysis about 1.3 eV is expected.

Better understanding and reduction of the excess noise might result in a limit of 0.6 eV FWHM

XEUS Cryogenic Instrument 26 - 27 October 2004


Tes key development issues2

  • Energy resolution limit vs pixel size

  • We can manufacture standard type pixels with a heat capacity C= 0.125 pJ/K and up to 250 x 250 μm2

    • 0.05 pJ/K for TiAu TES

    • 0.06 pJ/K for Cu/Sn and 0.08 pJ/K for Cu/Bi absorber

  • Larger pixels will require different designs. Scaling to .5 x .5 mm pixels seems quite well feasible by

    • Reduction of the fill factor TES/Multiple small TES in parallel

    • Non-continuous Cu-layer beneath Bi/Sn absorber

  • Pixels in access of 0.5 x 0.5 mm can most probably not be produced with a saturation at 2.5 keV and its corresponding energy resolution

TES key development Issues

XEUS Cryogenic Instrument 26 - 27 October 2004


Magnetic sensor key development issues

  • single pixel optimization

  • single pixel production by micro-electronics techniques

  • Array production development

  • Read-out and multiplexing

  • SQUID development and optimization

  • How we can use expertise build up for TES development for support of the magnetic sensor line?

Magnetic sensor key development Issues

XEUS Cryogenic Instrument 26 - 27 October 2004


Stj sensor key development issues

  • Prove of good energy resolution for large DROID’s

  • Arraying of DROID’s

  • Array read-out electronics

STJ sensor key development Issues

XEUS Cryogenic Instrument 26 - 27 October 2004


Common key development issues

  • X-ray entrance filters and UV – IR rejection filters

  • Cryogenics

Common key development Issues

XEUS Cryogenic Instrument 26 - 27 October 2004


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