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3-6 September 2002 Antwerp Hilton, Belgium. Outline. Wednesday Sept 4 th , 2002 Introduction Exposure tools/Immersion lithography Materials Lasers Thursday Sept 5 th , 2002 Resists I Metrology Friday Sept 6 th ,2002 Masks Resists II

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Outline

3-6 September 2002

Antwerp Hilton, Belgium


Outline

Outline

  • Wednesday Sept 4th, 2002

    • Introduction

    • Exposure tools/Immersion lithography

    • Materials

    • Lasers

  • Thursday Sept 5th, 2002

    • Resists I

    • Metrology

  • Friday Sept 6th,2002

    • Masks

    • Resists II

    • General / closure


Exposure tools and immersion lithography

Exposure tools andimmersion lithography

Session chairs : G. Fueller, A. Suzuki, R. Garreis

  • 08:40Nikon F2 Exposure Tool

  • Soichi Owa, Naomasa Shiraishi, Issei Tanaka, Yasuhiro Ohmura, Kazuhiro Kido

  • Nikon Corporation

  • 09:00Development of 157nm Exposure Tools

  • Hideo Hata

  • Canon Inc., Semiconductor Equipment Development Center

  • 09:20157nm Exposure Tool

  • Hans Jasper1,Herman Boom1, Tammo Uitterdijk1, Theo Modderman1, Jan Mulkens1, Judon Stoeldraijer1, Martin Brunotte2, Birgit Mecking2, Nils Dieckmann2

  • 1ASML Veldhoven, 2Carl Zeiss

  • 09:40Update on MSVII Lithographic System

  • J. McClay, B. Tirri, H. Sewell, T. Fahey

  • ASML Wilton


Exposure tools and immersion lithography1

Exposure tools and immersion lithography

Session chairs : G. Fueller, A. Suzuki, R. Garreis

  • 10:30Drivers, Prospects and Challenges for Immersion Lithography (INVITED)

  • Burn J. Lin

  • TSMC

  • 10:50Immersion Lithography: Optics for the 50nm Node

  • M. Switkes, M. Rothschild

  • MIT Lincoln Laboratory

  • 11:10157nm Objective Improvements, Wavefront Measurements and Modeling Predictions

  • James Webb, Steve Mack, Tim Rich, Horst Schreiber

  • Corning Tropel Corporation

  • 11:30High Numerical Aperture Lens for 157nm Lithography

  • Toshifumi Suganaga1, Noriyoshi Kanda1, Jae-Hwan Kim1, Osamu Yamabe1, Kunio Watanabe1, Takamitsu Furukawa1, Seiro Miyoshi1, Toshiro Itani1, Julian Cashmore2, Malcolm Gower2

  • 1Selete, 2Exitech Ltd.


Materials

Materials

Session chairs : R. Sparrow, S. Kikugawa, E. Moersen

  • 13:30Calcium Fluoride Quality Improvement Will Enable High Volume F2 Lithography Tools

  • G. Grabosch, K. Knapp, L. Parthier, E. Mörsen

  • Schott Lithotec AG

  • 13:50Progress in the Development of CaF2 Materials for 157nm Lithography

  • Applications

  • Bill Rosch, Michael Genier

  • Corning Inc.

  • 14:10Crystal Growth of CaF2 – Focus on Yield Enhancement

  • N. Senguttuvan1, K. Sumiya1, K. Susa1, M. Ishii 2

  • 1Research & Development Center, Hitachi Chemical Co., Ltd., 2 Shonan Institute of Technology

  • 14:30CaF2 Ramp Challenges for 157nm Lithography

  • Janice M. Golda

  • Intel Corporation

  • 14:50Index- and Birefringence-Dispersion Properties of CaF2, SrF2 and Ca1-xSrxF2 down to 157nm

  • John H. Burnett1, Zachary H. Levine1, Eric L. Shirley1, Robert Sparrow2

  • 1National Institute of Standards and Technology, 2Corning Inc.


Materials1

Materials

Session chairs : R. Sparrow, S. Kikugawa, E. Moersen

  • 15:10Modified Fused Silica Glass “AQF” for 157 nm Lithography

  • Y.Ikuta, T. Minematsu, H. Kojima, S. Kikugawa, Y. Sasuga

  • Asahi Glass Co. Ltd.

  • 16:00Refractory Oxide Contamination of Optical Surfaces at 157 nm

  • T.M. Bloomstein, J.H.C. Sedlacek, S.T. Palmacci, D.E. Hardy, V. Liberman, M. Rothschild

  • MIT Lincoln Laboratory

  • 16:20Long-Term Durability of Optical Coatings

  • V. Liberman1, M. Rothschld1, N.N. Efremow1, S.T. Palmacci1, J.H.C. Sedlacek1, A. Grenville2

  • 1MIT Lincoln Laboratory, 2Intel Corporation/International SEMATECH

  • 16:40Accelerated Damage to CaF2 and MgF2 Surfaces

  • V. Liberman1, M. Rothschld1, N.N. Efremow1, A. Grenville2

  • 1MIT Lincoln Laboratory, 2Intel Corporation/International SEMATECH


Lasers

Lasers

Session chairs : R. Sandstrom, H. Mizoguchi, R. Paetzel

  • 17:00High Power, High Repetition Rate F2-Laser for 157 nm Lithography

  • S. Spratte1, F. Voss1, I. Bragin1, E. Bergmann1, N. Niemöller1, T. Nagy1, U. Rebhan1, K. Vogler1, I. Klaft1, R. Pätzel1, G. Govorkov2, G. Hua2

  • 1Lambda Physik AG, 2Lambda Physik Inc.

  • 17:20F2 MOPA. Some Aspects of Spectral Purity

  • German Rylov

  • Cymer Inc.

  • 17:40Spectral Dynamics Analysis of Ultra-Line-Narrowed F2 Laser

  • Ryoichi Nohdomi3, Tatsuya Ariga3, Hidenori Watanabe3, Takahito Kumazaki3, Kazuaki Hotta4, Hakaru Mizoguchi3, Akihiko Takahashi1, Tatsuo Okada2

  • 1Kyushu University School of Health Sciences, 2Kyushu University, 3Gigaphoton Inc.,4Ushio Inc.


Resists i

Resists I

Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

  • 08:30Recent Advancements in 157nm Resist Performance

  • Karen Turnquest1, V. Graffenberg2, S. Patel2, D. Miller2, K. Dean2, A.-M. Goethals3, F. Van Roey3, Jan Hermans3, K. Ronse3, P. Wong4, S. Hansen4

  • 1AMD Assignee to International SEMATECH, 2International SEMATECH,3IMEC, 4ASML Veldhoven

  • 08:50Performances of Fluoropolymer Resists for 157-nm Lithography

  • Seiichi Ishikawa, Minoru Toriumi, Tamio Yamazaki, Toshiro Itani

  • Selete

  • 09:10Intel 157 nm Resist Benchmarking

  • Jeanette Roberts1, Paul Zimmerman2, Robert Meagley1, Jim Powers1

  • 1Intel Corporation, 2Intel Assignee to International SEMATECH


Resists i1

Resists I

Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

  • 09:30Advances in Fluorinated Polymers for 157nm Lithography

  • Will Conley1, Paul Zimmerman1, Daniel Miller1, Brian Trinque2, H.V. Tran1, Brian Osborn2, Charles Chambers2, Yu-Tsai Hsieh2, Schuyler Corry2, Takashi Chiba2, C. Grant Willson2

  • 1International SEMATECH, 2Department of Chemistry & Chemical Engineering,University of Texas at Austin

  • 09:50Fluoropolymer Resists for Single Layer 157 nm Lithography: Optimization of Their Combined Properties

  • M. K. Crawford, W. Farnham, A. E. Feiring, J. Feldman, R. H. French, K. W. Leffew, S. Nassirpour, V. A. Petrov, F. L. Schadt III, R. J. Smalley, F. C. Zumsteg

  • DuPont

  • 10:10Process and Formulation Development of Dissolution Inhibitors for 157 nm Microlithography: A Progress Report

  • Charles Chambers1, Will Conley2, Daniel Miller3, Brian Osborn1, Hoang V. Tran1, Brian Trinque1, Matthew Pinnow1, Takashi Chiba1, Paul Zimmerman4, C. Grant Willson3

  • 1Departments of Chemistry and Chemical Engineering, University of Texas, 2Motorola assignee to International SEMATECH, 3International SEMATECH, 4Intel assignee to International SEMATECH


Metrology

Metrology

Session chairs : J. Burnett, Y. Watakabe, W. Harnisch

  • 11:00Angle Resolved Scattering Measurements at 157nm

  • T.M. Bloomstein, D.E. Hardy, M. Rothschild

  • MIT Lincoln Laboratory

  • 11:20VUV Spectroscopic Ellipsometry Studies of Key Substrate Materials for 157nm Lithography

  • 1N.V. Edwards, 1S. Zollner, 1J. Kulik, 1Q. Xie, 1M. Erickson, 1X.-D. Wang, 1D. Roan,2T.E. Tiwald

  • 1Motorola APDER; 2J.A. Woollam Co.

  • 11:40Automated Metrology System Combining VUV Spectroscopic Ellipsometry and Grazing X-Ray Reflectance for the Characterization of Thin Films and Multilayers of 157nm Lithography

  • Pierre Boher, Patrick Evrard, Jean Philippe Piel, Christophe Defranoux, Jean Louis Stehle

  • SOPRA


Metrology1

Metrology

Session chairs : J. Burnett, Y. Watakabe, W. Harnisch

  • 12:00Exicor Duv Birefringence Measurement System At Optical Lithography Wavelengths

  • B. Wang, G. Bonar, A.Mikheyev, C. Mansfield, A. Breninger, J. List, R. Rockwell

  • Hinds Instruments, Inc.

  • 12.20High Brightness F2* (157nm) and ArF* (193nm) Lamps

  • Manfred Salvermoser, D.E. Murnick

  • Rutgers University, Dept. of Physics


Masks

Masks

Session chairs : C. Progler, N. Hayashi, C. Schilz

  • 08:30Electron Beam Induced Processes and their Applicability to Mask Repair

  • Johannes Bihr2, Volker Boegli1, Jens Greiser2, Hans W.P. Koops1

  • 1NaWoTec GmbH, 2LEO Elektronenmikroskopie GmbH

  • 08:50Development of Bilayered TaSiOx Embedded Attenuating PSM

  • Toshiaki Motonaga, Motoji Tabei, Kenji Noguchi, Masaharu Nishiguchi, Shiho Sasaki, Yasutaka Morikawa, Hiroshi Mohri, Morihisa Hoga, and Naoya Hayashi

  • Dai Nippon Printing Co. Ltd.

  • 09:10157nm Attenuated PSM Films by Ion Beam Sputter Deposition

  • Matthew Lassiter, Michael Cangemi, Darren Taylor

  • Photronics Inc.


Masks1

Masks

Session chairs : C. Progler, N. Hayashi, C. Schilz

  • 09:30Implementation Challenges of Fused Silica Pellicles for 157-nm Lithography

  • Andrew Grenville1, Emily Fisch2, Ivan Lalovic3, Emily Shu4, Kyle Spurlock5, Chris Van Peski6, Eric Cotte7, Phillip Reu7, Roxann Engelstad7, Edward Lovell7

  • 1International SEMATECH/Intel Corporation, 2IBM Microelectronics, 3Advanced Micro Devices, 4Intel Corporation, 5International SEMATECH/Advanced Micro Devices, 6International SEMATECH, 7University of Wisconsin

  • 09:50Feasibility of Defect Inspection of 157nm Reticles Through Thick Pellicles

  • Jim Wiley

  • KLA Tencor Corporation

  • 10:10Fused Silica Pellicle Mounting Issues

  • Chris Van Peski1, Andrew Grenville2, Emily Shu3

  • 1International SEMATECH , 2 International SEMATECH/Intel Corporation, 3Intel Corporation

  • 10:30Improvement of the Membrane Durability of Polymeric Pellicles

  • Ikuo Matsukura

  • ASAHI Glass Co. Ltd.


Resists ii

Resists II

Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

  • 11:20Resist Contamination Issues at 157nm

  • Kim Dean1, David Stark1, Jeff Meute2, Karen Turnquest3

  • 1International SEMATECH, 2IBM Assignee to International SEMATECH, 3AMD Assignee to International SEMATECH

  • 11:40Evolution of Low Absorbance 157nm Fluoresists

  • Gary Taylor, Sassan Nur, Cheng Bai Xu, Gary Teng, JoAnne Leonard

  • Shipley Co.

  • 12:00Development ofSilsesquioxane Based 157nm Photoresist: an Update

  • Raymond J. Hung1, Mikio Yamachika1, Takashi Chiba2, Haruo Iwasawa2, Akihiro Hayashi2, Noboru Yamahara2, Tsutomu Shimokawa2

  • 1JSR Microelectronics Inc, 2JSR Corporation


Resists ii1

Resists II

Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

  • 12:20Platform Considerations for 157 nm Photoresists

  • Ralph R. Dammel1, Francis Houlihan1, Raj Sakamuri1, Sang-Ho Lee1, M. Dalil Rahman1, Takanori Kudo1, Andrew Romano1, Larry Rhodes2, Chun Chang2, John Lipian2, Cheryl Burns2, Dennis A. Barnes2, Will Conley3, Daniel Miller3

  • 1AZ Electronic Materials,Clariant Corporation, 2Promerus LLC, 3International SEMATECH

  • 12:40Pragmatic Approaches to 157nm Resist Design

  • Sanjay Malik1, Stephanie Dilocker1, Tadayoshi Kokubo2

  • 1Arch Chemicals, Inc., 2FUJIFILM ARCH Co. Ltd


General closure

General / Closure

  • 14:30An Analysis of 157nm Technology Cost of Ownership

  • Walt Trybula and Phil Seidel

  • International SEMATECH

  • 14:50Closing Remarks

  • Luc Van den hove

  • IMEC


Poster session metrology

Poster Session: Metrology

  • Line-Edge Roughness Calculation of Photoresists Using Off-LineAnalysis of Top-Down SEM Images

  • G. P. Patsis1, T. Hoffmann2, G. Grozev3, A. Tserepi1, V. Constantoudis1, and E Gogolides1

  • 1NCSR Demokritos, Institute of Microelectronics, 2IMEC vzw, 3Assignee of ARCH Chemicals at IMEC

  • Analysis of Top-down SEM Images of Resists for Line-edge Roughness (LER) Calculations: What are the Best Descriptors of LER Based on Scaling and Fractal Analysis?

  • V. Constantoudis1, G. P. Patsis1, T. Hoffmann2, G. Grozev3, A. Tserepi1, and E Gogolides1

  • 1NCSR Demokritos, Institute of Microelectronics, 2IMEC vzw, 3Assignee of ARCH Chemicals at IMEC


Poster session masks

Poster Session: Masks

  • Molecular Contamination in 157 nm Lithography:Feasibility of Reticle Cleaning

  • Anton Duisterwinkel1, Willem van Schaik2

  • 1TNO TPD Center for Contamination Control, 2ASML, Veldhoven

  • Development of Hard Pellicle for 157 nm lithography

  • K.Okada, K.Ootsuka, I.Ishikawa, Y.Ikuta, H.Kojima, T.Kawahara, T.Minematsu, H.Mishiro, S. Kikugawa and Y.Sasuga

  • ASAHI Glass Co. Ltd.

  • Fundamentals of Transparancy in Fluoropolymers for Use as 157nm Soft Pellicles

  • Roger H. French1, Robert C. Wheland1, M. F. Lemon1,Edward Zhang2,Joseph Gordon2

  • 1DuPont Co. Central Research, 2DuPont Photomasks Inc.

  • Printing 65nm Dense Lines by Using Phase Masks at 157nm Wavelength

  • L.A. Wang, H. C. Chen

  • Institute of Electro-Optical Engineeing, National Taiwan University


Poster session lasers

Poster Session: Lasers

  • A Novel Large Area 172nm Xe2* VUV Excimer Lamp

  • Manfred Salvermoser, D.E. Murnick

  • Rutgers University, Dept. of Physics

  • Compact Excimer Lasers at 157 nm for Metrology and Inspection

  • A. Görtler, C. Strowitzki

  • TuiLaser AG


Poster session materials

Poster Session: Materials

  • The Small Optical Anisotropy in CaF2: on the Connection to Exciton Dispersion

  • M. Letz1, W. Mannstadt1, M. Brinkmann1, G. Wehrhan2, L. Parthier2, E. Mörsen2

  • 1Schott Glas, Research and Development, 2Schott Lithotec AG

  • Ultrasonic Sensor System For Calcium Fluoride Crystal Manufacture

  • Joe Rose1, Chuck Morris1, John Schupp2, Kyle Spurlock3

  • 1Pennsylvania State University, 2ACT Optics and Engineering, Inc., 3International SEMATECH

  • Optical Properties of Ca x Sr ( 1-x) F 2 Crystals

  • Robert W. Sparrow1, Charlene M. Smith2

  • 1Specialty Materials Division, Corning Incorporated, 2Science and Technology Division, Corning Incorporated


Poster session materials1

Poster Session: Materials

  • Equipment for Annealing of Ca F2

  • Serhat Yesilyurt, Shariar Motakef

  • Cape Simulations, Inc.

  • The Influence of Contamination on 157 nm Optical Components

  • Lutz Raupach

  • Jenoptik Laser, Optik, Systeme GmbH


Poster session exp tools

Poster Session: Exp. Tools

  • EHS impacts associated with the emerging materials and processes of advanced photolithography

  • Jeffrey Heaps

  • International SEMATECH

  • 157nm 0.85NA Lens Upgrade at ISMT

  • Jeff Meute1, Yung-Tin Chen1, Georgia Rich1, Julian Cashmore2, Malcolm Gower2, Dominic Ashworth2, Jim Webb3, Bruce Smith4

  • 1International SEMATECH, 2Exitech Ltd., 3Corning Tropel,4Rochester Institute of Technology

  • Process Simulation and Optimization with 157-nmHigh NA Lens for 65 nm Node

  • Yung-Tin Chen, Jeff Meute, Karen Turnquest, Kim Dean

  • International SEMATECH

  • Extreme-NA Water Immersion Lithography for 35-65 nm Technology

  • Bruce Smith, Hoyoung Kang, Anatoli Bourov

  • Rochester Institute of Technology


Poster session exp tools1

Poster Session: Exp. Tools

  • Fluor : Frontline Lithography Using Optical Refraction,The European Initiative to Enable 157nm Lithography

  • Judon Stoeldraijer1, Mieke Goethals2, Wolfgang Henke3, Ewald Mörsen4

  • 1ASML Veldhoven, 2IMEC, 3Infineon Technologies AG, 4Schott Lithotec AG


Poster session resists

Poster Session: Resists

  • UV2Litho : Usable Vacuum Ultra Violet Lithography

  • A.M. Goethals1, R. Jonckheere1, F. Van Roey1, Jan Hermans1, A. Eliat1, K. Ronse1, P. Wong2, P. Zandbergen3, M. Vasconi4, E. Severgnini4, W. Henke5, C. Hohle6, D. Henry7, Ph. Thon7, L. Markey7, P. Schiavone8, D. Fuard8

  • 1IMEC, 2ASML Veldhoven, 3Philips Research, 4STMicroelectronics S.r.l Agrate Brianza, 5Infineon Technologies AG Dresden, 6Infineon Erlangen, 7STMicroelectronics Crolles, 8CNRS

  • Printing 65nm Dense Lines by Using Phase Masks at157 nm Wavelength

  • L.A. Wang, H. C. Chen

  • Institute of Electro-Optical Engineeing, National Taiwan University


Poster session resists1

Poster Session: Resists

  • New Silsesquioxane and Siloxane Based Resist Copolymersfor 157nm Lithography

  • V. Bellas1, E. Tegou1, I. Raptis1, E. Gogolides1, P. Argitis1,E. Sarantopoulou2, A.C. Cefalas2

  • 1Institute of Microelectronics, NCSR Demokritos, 2Institute of Physical and Theoretical Chemistry, NHRF

  • Impact of Resist Absorbance on CD Control

  • Laurent Markey1, Peter Zandbergen2

  • 1STMicroelectronics, 2Philips Semiconductors

  • Thermal Behavior of Dissolution InhibitorsGeunsu Lee1, Paul Zimmerman1, Will Conley1, Daniel Miller1,Charles Chambers2, Brian Osborn2, Shiro Kusumoto2, C. Grant Willson2

  • 1International SEMATECH, 2Department of chemistry, University of Texas


Poster session resists2

Poster Session: Resists

  • Parameter Extraction for 157nm Photoresists

  • Will Conley1, J. Bendik2, Daniel Miller3, Paul Zimmerman4, Kim Dean3,John Petersen5 , Jeff Byers6, Ralph Dammel7, Raj Sakumari7, Frank Houlihan7

  • 1Motorola assignee to International SEMATECH, 2Dynamic Intelligence Inc. 3International SEMATECH, 4Intel assignee to International SEMATECH, 5Petersen Advanced Lithography, 6KLA-Tencor; Finle Technologies Division,7Clariant Corporation

  • Fluoropolymer Resists for 157 nm Lithography

  • Vaishali Vohra1, Katsuji Douki1, Xiang-Qian Liu1, Young-Je Kwark1, Christopher Ober1, Will Conley2, Daniel Miller2, Paul Zimmerman2

  • 1Department of Materials Science & Engineering, Cornell University, 2International SEMATECH

  • Molecular Anisotropy in 157nm Photoresist Materials

  • Jeanette Roberts, Robert Meagley, Adam J. Schafer

  • Intel Corporation


Poster session resists3

Poster Session: Resists

  • Negative Photoresist for 157 nm Microlithography

  • Paul Zimmerman1*, Brian Trinque2, Will Conley3, Daniel Miller4, Ralph Dammel5, Andrew Romano5, Raj Sakumari, Shiro Kumamoto2, Hoang Tran2, Matthew Pinnow2, Ryan Callahan2, Charles Chambers2, C. Grant Willson2

  • 1Intel assignee to International SEMATECH, 2Departments of Chemistry and Chemical Engineering, University of Texas, 3Motorola assignee to International SEMATECH, 4International SEMATECH, 5Clariant Corporation

  • Synthesis and Properties of Noval Fluoropolymer for 157nm Photoresists by Cyclo-polymerization

  • Osamu Yokokoji1, Shun-ichi Kodama1, Isamu Kaneko1, Yoko Takebe1, Shinji Okada1, Yasuhide Kawaguchi1, Shigeo Irie2, Seiichi Ishikawa2, Minoryu Toriumi2, Toshiro Itani2

  • 1Asahi Glass Co. Ltd.,2Selete

  • Advances in TFE Based Fluoropolymers for 157nm Lithography: A Progress Report

  • Iqbal Sharif1, Darryl DesMarteau1, Will Conley2, Paul Zimmerman3, Daniel Miller4, Guen Su Lee5, Charles Chambers6, Brian Trinque6, Takashi Chiba6, Brian Osborn6, C. Grant Willson4

  • 1Clemson University, Dept of Chemistry, 2Motorola assignee at International SEMATECH, 3Intel assignee at International SEMATECH, 4International SEMATECH, 5Hynix assignee at International SEMATECH, 6Department of Chemistry & Chemical Engineering, University of Texas at Austin


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