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3-6 September 2002 Antwerp Hilton, Belgium. Outline. Wednesday Sept 4 th , 2002 Introduction Exposure tools/Immersion lithography Materials Lasers Thursday Sept 5 th , 2002 Resists I Metrology Friday Sept 6 th ,2002 Masks Resists II

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slide1

3-6 September 2002

Antwerp Hilton, Belgium

outline
Outline
  • Wednesday Sept 4th, 2002
    • Introduction
    • Exposure tools/Immersion lithography
    • Materials
    • Lasers
  • Thursday Sept 5th, 2002
    • Resists I
    • Metrology
  • Friday Sept 6th,2002
    • Masks
    • Resists II
    • General / closure
exposure tools and immersion lithography
Exposure tools andimmersion lithography

Session chairs : G. Fueller, A. Suzuki, R. Garreis

  • 08:40 Nikon F2 Exposure Tool
  • Soichi Owa, Naomasa Shiraishi, Issei Tanaka, Yasuhiro Ohmura, Kazuhiro Kido
  • Nikon Corporation
  • 09:00 Development of 157nm Exposure Tools
  • Hideo Hata
  • Canon Inc., Semiconductor Equipment Development Center
  • 09:20 157nm Exposure Tool
  • Hans Jasper1,Herman Boom1, Tammo Uitterdijk1, Theo Modderman1, Jan Mulkens1, Judon Stoeldraijer1, Martin Brunotte2, Birgit Mecking2, Nils Dieckmann2
  • 1ASML Veldhoven, 2Carl Zeiss
  • 09:40 Update on MSVII Lithographic System
  • J. McClay, B. Tirri, H. Sewell, T. Fahey
  • ASML Wilton
exposure tools and immersion lithography1
Exposure tools and immersion lithography

Session chairs : G. Fueller, A. Suzuki, R. Garreis

  • 10:30 Drivers, Prospects and Challenges for Immersion Lithography (INVITED)
  • Burn J. Lin
  • TSMC
  • 10:50 Immersion Lithography: Optics for the 50nm Node
  • M. Switkes, M. Rothschild
  • MIT Lincoln Laboratory
  • 11:10 157nm Objective Improvements, Wavefront Measurements and Modeling Predictions
  • James Webb, Steve Mack, Tim Rich, Horst Schreiber
  • Corning Tropel Corporation
  • 11:30 High Numerical Aperture Lens for 157nm Lithography
  • Toshifumi Suganaga1, Noriyoshi Kanda1, Jae-Hwan Kim1, Osamu Yamabe1, Kunio Watanabe1, Takamitsu Furukawa1, Seiro Miyoshi1, Toshiro Itani1, Julian Cashmore2, Malcolm Gower2
  • 1Selete, 2Exitech Ltd.
materials
Materials

Session chairs : R. Sparrow, S. Kikugawa, E. Moersen

  • 13:30 Calcium Fluoride Quality Improvement Will Enable High Volume F2 Lithography Tools
  • G. Grabosch, K. Knapp, L. Parthier, E. Mörsen
  • Schott Lithotec AG
  • 13:50 Progress in the Development of CaF2 Materials for 157nm Lithography
  • Applications
  • Bill Rosch, Michael Genier
  • Corning Inc.
  • 14:10 Crystal Growth of CaF2 – Focus on Yield Enhancement
  • N. Senguttuvan1, K. Sumiya1, K. Susa1, M. Ishii 2
  • 1Research & Development Center, Hitachi Chemical Co., Ltd., 2 Shonan Institute of Technology
  • 14:30 CaF2 Ramp Challenges for 157nm Lithography
  • Janice M. Golda
  • Intel Corporation
  • 14:50 Index- and Birefringence-Dispersion Properties of CaF2, SrF2 and Ca1-xSrxF2 down to 157nm
  • John H. Burnett1, Zachary H. Levine1, Eric L. Shirley1, Robert Sparrow2
  • 1National Institute of Standards and Technology, 2Corning Inc.
materials1
Materials

Session chairs : R. Sparrow, S. Kikugawa, E. Moersen

  • 15:10 Modified Fused Silica Glass “AQF” for 157 nm Lithography
  • Y.Ikuta, T. Minematsu, H. Kojima, S. Kikugawa, Y. Sasuga
  • Asahi Glass Co. Ltd.
  • 16:00 Refractory Oxide Contamination of Optical Surfaces at 157 nm
  • T.M. Bloomstein, J.H.C. Sedlacek, S.T. Palmacci, D.E. Hardy, V. Liberman, M. Rothschild
  • MIT Lincoln Laboratory
  • 16:20 Long-Term Durability of Optical Coatings
  • V. Liberman1, M. Rothschld1, N.N. Efremow1, S.T. Palmacci1, J.H.C. Sedlacek1, A. Grenville2
  • 1MIT Lincoln Laboratory, 2Intel Corporation/International SEMATECH
  • 16:40 Accelerated Damage to CaF2 and MgF2 Surfaces
  • V. Liberman1, M. Rothschld1, N.N. Efremow1, A. Grenville2
  • 1MIT Lincoln Laboratory, 2Intel Corporation/International SEMATECH
lasers
Lasers

Session chairs : R. Sandstrom, H. Mizoguchi, R. Paetzel

  • 17:00 High Power, High Repetition Rate F2-Laser for 157 nm Lithography
  • S. Spratte1, F. Voss1, I. Bragin1, E. Bergmann1, N. Niemöller1, T. Nagy1, U. Rebhan1, K. Vogler1, I. Klaft1, R. Pätzel1, G. Govorkov2, G. Hua2
  • 1Lambda Physik AG, 2Lambda Physik Inc.
  • 17:20 F2 MOPA. Some Aspects of Spectral Purity
  • German Rylov
  • Cymer Inc.
  • 17:40 Spectral Dynamics Analysis of Ultra-Line-Narrowed F2 Laser
  • Ryoichi Nohdomi3, Tatsuya Ariga3, Hidenori Watanabe3, Takahito Kumazaki3, Kazuaki Hotta4, Hakaru Mizoguchi3, Akihiko Takahashi1, Tatsuo Okada2
  • 1Kyushu University School of Health Sciences, 2Kyushu University, 3Gigaphoton Inc.,4Ushio Inc.
resists i
Resists I

Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

  • 08:30 Recent Advancements in 157nm Resist Performance
  • Karen Turnquest1, V. Graffenberg2, S. Patel2, D. Miller2, K. Dean2, A.-M. Goethals3, F. Van Roey3, Jan Hermans3, K. Ronse3, P. Wong4, S. Hansen4
  • 1AMD Assignee to International SEMATECH, 2International SEMATECH,3IMEC, 4ASML Veldhoven
  • 08:50 Performances of Fluoropolymer Resists for 157-nm Lithography
  • Seiichi Ishikawa, Minoru Toriumi, Tamio Yamazaki, Toshiro Itani
  • Selete
  • 09:10 Intel 157 nm Resist Benchmarking
  • Jeanette Roberts1, Paul Zimmerman2, Robert Meagley1, Jim Powers1
  • 1Intel Corporation, 2Intel Assignee to International SEMATECH
resists i1
Resists I

Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

  • 09:30 Advances in Fluorinated Polymers for 157nm Lithography
  • Will Conley1, Paul Zimmerman1, Daniel Miller1, Brian Trinque2, H.V. Tran1, Brian Osborn2, Charles Chambers2, Yu-Tsai Hsieh2, Schuyler Corry2, Takashi Chiba2, C. Grant Willson2
  • 1International SEMATECH, 2Department of Chemistry & Chemical Engineering, University of Texas at Austin
  • 09:50 Fluoropolymer Resists for Single Layer 157 nm Lithography: Optimization of Their Combined Properties
  • M. K. Crawford, W. Farnham, A. E. Feiring, J. Feldman, R. H. French, K. W. Leffew, S. Nassirpour, V. A. Petrov, F. L. Schadt III, R. J. Smalley, F. C. Zumsteg
  • DuPont
  • 10:10 Process and Formulation Development of Dissolution Inhibitors for 157 nm Microlithography: A Progress Report
  • Charles Chambers1, Will Conley2, Daniel Miller3, Brian Osborn1, Hoang V. Tran1, Brian Trinque1, Matthew Pinnow1, Takashi Chiba1, Paul Zimmerman4, C. Grant Willson3
  • 1Departments of Chemistry and Chemical Engineering, University of Texas, 2Motorola assignee to International SEMATECH, 3International SEMATECH, 4Intel assignee to International SEMATECH
metrology
Metrology

Session chairs : J. Burnett, Y. Watakabe, W. Harnisch

  • 11:00 Angle Resolved Scattering Measurements at 157nm
  • T.M. Bloomstein, D.E. Hardy, M. Rothschild
  • MIT Lincoln Laboratory
  • 11:20 VUV Spectroscopic Ellipsometry Studies of Key Substrate Materials for 157nm Lithography
  • 1N.V. Edwards, 1S. Zollner, 1J. Kulik, 1Q. Xie, 1M. Erickson, 1X.-D. Wang, 1D. Roan,2T.E. Tiwald
  • 1Motorola APDER; 2J.A. Woollam Co.
  • 11:40 Automated Metrology System Combining VUV Spectroscopic Ellipsometry and Grazing X-Ray Reflectance for the Characterization of Thin Films and Multilayers of 157nm Lithography
  • Pierre Boher, Patrick Evrard, Jean Philippe Piel, Christophe Defranoux, Jean Louis Stehle
  • SOPRA
metrology1
Metrology

Session chairs : J. Burnett, Y. Watakabe, W. Harnisch

  • 12:00 Exicor Duv Birefringence Measurement System At Optical Lithography Wavelengths
  • B. Wang, G. Bonar, A.Mikheyev, C. Mansfield, A. Breninger, J. List, R. Rockwell
  • Hinds Instruments, Inc.
  • 12.20 High Brightness F2* (157nm) and ArF* (193nm) Lamps
  • Manfred Salvermoser, D.E. Murnick
  • Rutgers University, Dept. of Physics
masks
Masks

Session chairs : C. Progler, N. Hayashi, C. Schilz

  • 08:30 Electron Beam Induced Processes and their Applicability to Mask Repair
  • Johannes Bihr2, Volker Boegli1, Jens Greiser2, Hans W.P. Koops1
  • 1NaWoTec GmbH, 2LEO Elektronenmikroskopie GmbH
  • 08:50 Development of Bilayered TaSiOx Embedded Attenuating PSM
  • Toshiaki Motonaga, Motoji Tabei, Kenji Noguchi, Masaharu Nishiguchi, Shiho Sasaki, Yasutaka Morikawa, Hiroshi Mohri, Morihisa Hoga, and Naoya Hayashi
  • Dai Nippon Printing Co. Ltd.
  • 09:10 157nm Attenuated PSM Films by Ion Beam Sputter Deposition
  • Matthew Lassiter, Michael Cangemi, Darren Taylor
  • Photronics Inc.
masks1
Masks

Session chairs : C. Progler, N. Hayashi, C. Schilz

  • 09:30 Implementation Challenges of Fused Silica Pellicles for 157-nm Lithography
  • Andrew Grenville1, Emily Fisch2, Ivan Lalovic3, Emily Shu4, Kyle Spurlock5, Chris Van Peski6, Eric Cotte7, Phillip Reu7, Roxann Engelstad7, Edward Lovell7
  • 1International SEMATECH/Intel Corporation, 2IBM Microelectronics, 3Advanced Micro Devices, 4Intel Corporation, 5International SEMATECH/ Advanced Micro Devices, 6International SEMATECH, 7University of Wisconsin
  • 09:50 Feasibility of Defect Inspection of 157nm Reticles Through Thick Pellicles
  • Jim Wiley
  • KLA Tencor Corporation
  • 10:10 Fused Silica Pellicle Mounting Issues
  • Chris Van Peski1, Andrew Grenville2, Emily Shu3
  • 1International SEMATECH , 2 International SEMATECH/Intel Corporation, 3Intel Corporation
  • 10:30 Improvement of the Membrane Durability of Polymeric Pellicles
  • Ikuo Matsukura
  • ASAHI Glass Co. Ltd.
resists ii
Resists II

Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

  • 11:20 Resist Contamination Issues at 157nm
  • Kim Dean1, David Stark1, Jeff Meute2, Karen Turnquest3
  • 1International SEMATECH, 2IBM Assignee to International SEMATECH, 3AMD Assignee to International SEMATECH
  • 11:40 Evolution of Low Absorbance 157nm Fluoresists
  • Gary Taylor, Sassan Nur, Cheng Bai Xu, Gary Teng, JoAnne Leonard
  • Shipley Co.
  • 12:00 Development ofSilsesquioxane Based 157nm Photoresist: an Update
  • Raymond J. Hung1, Mikio Yamachika1, Takashi Chiba2, Haruo Iwasawa2, Akihiro Hayashi2, Noboru Yamahara2, Tsutomu Shimokawa2
  • 1JSR Microelectronics Inc, 2JSR Corporation
resists ii1
Resists II

Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel

  • 12:20 Platform Considerations for 157 nm Photoresists
  • Ralph R. Dammel1, Francis Houlihan1, Raj Sakamuri1, Sang-Ho Lee1, M. Dalil Rahman1, Takanori Kudo1, Andrew Romano1, Larry Rhodes2, Chun Chang2, John Lipian2, Cheryl Burns2, Dennis A. Barnes2, Will Conley3, Daniel Miller3
  • 1AZ Electronic Materials,Clariant Corporation, 2Promerus LLC, 3International SEMATECH
  • 12:40 Pragmatic Approaches to 157nm Resist Design
  • Sanjay Malik1, Stephanie Dilocker1, Tadayoshi Kokubo2
  • 1Arch Chemicals, Inc., 2FUJIFILM ARCH Co. Ltd
general closure
General / Closure
  • 14:30 An Analysis of 157nm Technology Cost of Ownership
  • Walt Trybula and Phil Seidel
  • International SEMATECH
  • 14:50 Closing Remarks
  • Luc Van den hove
  • IMEC
poster session metrology
Poster Session: Metrology
  • Line-Edge Roughness Calculation of Photoresists Using Off-LineAnalysis of Top-Down SEM Images
  • G. P. Patsis1, T. Hoffmann2, G. Grozev3, A. Tserepi1, V. Constantoudis1, and E Gogolides1
  • 1NCSR Demokritos, Institute of Microelectronics, 2IMEC vzw, 3Assignee of ARCH Chemicals at IMEC
  • Analysis of Top-down SEM Images of Resists for Line-edge Roughness (LER) Calculations: What are the Best Descriptors of LER Based on Scaling and Fractal Analysis?
  • V. Constantoudis1, G. P. Patsis1, T. Hoffmann2, G. Grozev3, A. Tserepi1, and E Gogolides1
  • 1NCSR Demokritos, Institute of Microelectronics, 2IMEC vzw, 3Assignee of ARCH Chemicals at IMEC
poster session masks
Poster Session: Masks
  • Molecular Contamination in 157 nm Lithography:Feasibility of Reticle Cleaning
  • Anton Duisterwinkel1, Willem van Schaik2
  • 1TNO TPD Center for Contamination Control, 2ASML, Veldhoven
  • Development of Hard Pellicle for 157 nm lithography
  • K.Okada, K.Ootsuka, I.Ishikawa, Y.Ikuta, H.Kojima, T.Kawahara, T.Minematsu, H.Mishiro, S. Kikugawa and Y.Sasuga
  • ASAHI Glass Co. Ltd.
  • Fundamentals of Transparancy in Fluoropolymers for Use as 157nm Soft Pellicles
  • Roger H. French1, Robert C. Wheland1, M. F. Lemon1,Edward Zhang2,Joseph Gordon2
  • 1DuPont Co. Central Research, 2DuPont Photomasks Inc.
  • Printing 65nm Dense Lines by Using Phase Masks at 157nm Wavelength
  • L.A. Wang, H. C. Chen
  • Institute of Electro-Optical Engineeing, National Taiwan University
poster session lasers
Poster Session: Lasers
  • A Novel Large Area 172nm Xe2* VUV Excimer Lamp
  • Manfred Salvermoser, D.E. Murnick
  • Rutgers University, Dept. of Physics
  • Compact Excimer Lasers at 157 nm for Metrology and Inspection
  • A. Görtler, C. Strowitzki
  • TuiLaser AG
poster session materials
Poster Session: Materials
  • The Small Optical Anisotropy in CaF2: on the Connection to Exciton Dispersion
  • M. Letz1, W. Mannstadt1, M. Brinkmann1, G. Wehrhan2, L. Parthier2, E. Mörsen2
  • 1Schott Glas, Research and Development, 2Schott Lithotec AG
  • Ultrasonic Sensor System For Calcium Fluoride Crystal Manufacture
  • Joe Rose1, Chuck Morris1, John Schupp2, Kyle Spurlock3
  • 1Pennsylvania State University, 2ACT Optics and Engineering, Inc., 3International SEMATECH
  • Optical Properties of Ca x Sr ( 1-x) F 2 Crystals
  • Robert W. Sparrow1, Charlene M. Smith2
  • 1Specialty Materials Division, Corning Incorporated, 2Science and Technology Division, Corning Incorporated
poster session materials1
Poster Session: Materials
  • Equipment for Annealing of Ca F2
  • Serhat Yesilyurt, Shariar Motakef
  • Cape Simulations, Inc.
  • The Influence of Contamination on 157 nm Optical Components
  • Lutz Raupach
  • Jenoptik Laser, Optik, Systeme GmbH
poster session exp tools
Poster Session: Exp. Tools
  • EHS impacts associated with the emerging materials and processes of advanced photolithography
  • Jeffrey Heaps
  • International SEMATECH
  • 157nm 0.85NA Lens Upgrade at ISMT
  • Jeff Meute1, Yung-Tin Chen1, Georgia Rich1, Julian Cashmore2, Malcolm Gower2, Dominic Ashworth2, Jim Webb3, Bruce Smith4
  • 1International SEMATECH, 2Exitech Ltd., 3Corning Tropel,4Rochester Institute of Technology
  • Process Simulation and Optimization with 157-nmHigh NA Lens for 65 nm Node
  • Yung-Tin Chen, Jeff Meute, Karen Turnquest, Kim Dean
  • International SEMATECH
  • Extreme-NA Water Immersion Lithography for 35-65 nm Technology
  • Bruce Smith, Hoyoung Kang, Anatoli Bourov
  • Rochester Institute of Technology
poster session exp tools1
Poster Session: Exp. Tools
  • Fluor : Frontline Lithography Using Optical Refraction,The European Initiative to Enable 157nm Lithography
  • Judon Stoeldraijer1, Mieke Goethals2, Wolfgang Henke3, Ewald Mörsen4
  • 1ASML Veldhoven, 2IMEC, 3Infineon Technologies AG, 4Schott Lithotec AG
poster session resists
Poster Session: Resists
  • UV2Litho : Usable Vacuum Ultra Violet Lithography
  • A.M. Goethals1, R. Jonckheere1, F. Van Roey1, Jan Hermans1, A. Eliat1, K. Ronse1, P. Wong2, P. Zandbergen3, M. Vasconi4, E. Severgnini4, W. Henke5, C. Hohle6, D. Henry7, Ph. Thon7, L. Markey7, P. Schiavone8, D. Fuard8
  • 1IMEC, 2ASML Veldhoven, 3Philips Research, 4STMicroelectronics S.r.l Agrate Brianza, 5Infineon Technologies AG Dresden, 6Infineon Erlangen, 7STMicroelectronics Crolles, 8CNRS
  • Printing 65nm Dense Lines by Using Phase Masks at157 nm Wavelength
  • L.A. Wang, H. C. Chen
  • Institute of Electro-Optical Engineeing, National Taiwan University
poster session resists1
Poster Session: Resists
  • New Silsesquioxane and Siloxane Based Resist Copolymersfor 157nm Lithography
  • V. Bellas1, E. Tegou1, I. Raptis1, E. Gogolides1, P. Argitis1,E. Sarantopoulou2, A.C. Cefalas2
  • 1Institute of Microelectronics, NCSR Demokritos, 2Institute of Physical and Theoretical Chemistry, NHRF
  • Impact of Resist Absorbance on CD Control
  • Laurent Markey1, Peter Zandbergen2
  • 1STMicroelectronics, 2Philips Semiconductors
  • Thermal Behavior of Dissolution InhibitorsGeunsu Lee1, Paul Zimmerman1, Will Conley1, Daniel Miller1,Charles Chambers2, Brian Osborn2, Shiro Kusumoto2, C. Grant Willson2
  • 1International SEMATECH, 2Department of chemistry, University of Texas
poster session resists2
Poster Session: Resists
  • Parameter Extraction for 157nm Photoresists
  • Will Conley1, J. Bendik2, Daniel Miller3, Paul Zimmerman4, Kim Dean3,John Petersen5 , Jeff Byers6, Ralph Dammel7, Raj Sakumari7, Frank Houlihan7
  • 1Motorola assignee to International SEMATECH, 2Dynamic Intelligence Inc. 3International SEMATECH, 4Intel assignee to International SEMATECH, 5Petersen Advanced Lithography, 6KLA-Tencor; Finle Technologies Division,7Clariant Corporation
  • Fluoropolymer Resists for 157 nm Lithography
  • Vaishali Vohra1, Katsuji Douki1, Xiang-Qian Liu1, Young-Je Kwark1, Christopher Ober1, Will Conley2, Daniel Miller2, Paul Zimmerman2
  • 1Department of Materials Science & Engineering, Cornell University, 2International SEMATECH
  • Molecular Anisotropy in 157nm Photoresist Materials
  • Jeanette Roberts, Robert Meagley, Adam J. Schafer
  • Intel Corporation
poster session resists3
Poster Session: Resists
  • Negative Photoresist for 157 nm Microlithography
  • Paul Zimmerman1*, Brian Trinque2, Will Conley3, Daniel Miller4, Ralph Dammel5, Andrew Romano5, Raj Sakumari, Shiro Kumamoto2, Hoang Tran2, Matthew Pinnow2, Ryan Callahan2, Charles Chambers2, C. Grant Willson2
  • 1Intel assignee to International SEMATECH, 2Departments of Chemistry and Chemical Engineering, University of Texas, 3Motorola assignee to International SEMATECH, 4International SEMATECH, 5Clariant Corporation
  • Synthesis and Properties of Noval Fluoropolymer for 157nm Photoresists by Cyclo-polymerization
  • Osamu Yokokoji1, Shun-ichi Kodama1, Isamu Kaneko1, Yoko Takebe1, Shinji Okada1, Yasuhide Kawaguchi1, Shigeo Irie2, Seiichi Ishikawa2, Minoryu Toriumi2, Toshiro Itani2
  • 1Asahi Glass Co. Ltd.,2Selete
  • Advances in TFE Based Fluoropolymers for 157nm Lithography: A Progress Report
  • Iqbal Sharif1, Darryl DesMarteau1, Will Conley2, Paul Zimmerman3, Daniel Miller4, Guen Su Lee5, Charles Chambers6, Brian Trinque6, Takashi Chiba6, Brian Osborn6, C. Grant Willson4
  • 1Clemson University, Dept of Chemistry, 2Motorola assignee at International SEMATECH, 3Intel assignee at International SEMATECH, 4International SEMATECH, 5Hynix assignee at International SEMATECH, 6Department of Chemistry & Chemical Engineering, University of Texas at Austin
ad