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电磁环境与电磁干扰 PowerPoint PPT Presentation


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电磁环境与电磁干扰. 主讲人 徐晓英 教授. 绪 论. 随着现代科学技术的发展,电气及电子设备的数量、种类不断增加,空间电磁环境变得日益复杂。一方面在这种复杂的电磁环境下,如何减少相互间的电磁干扰,使各种设备不受干扰的影响而相容地正常工作,另一方面,恶劣的电磁环境对人类及生态产生如何的不良影响等等,都是迫切需要研究的课题。. 绪 论.

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电磁环境与电磁干扰

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EMCEMCElectromagnetic CompatibilityEMCEMCEMC


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GHzRadio Frequency InterferenceRFI

EME


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ESD

1

2

3

4


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ESD)

-


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ESD

  • EMP


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  • corona discharge)

    An electrical discharge characterized by a corona and occurring when one of two electrodes in a gas has a shape causing the electric field at its surface to be significantly greater than that between the electrodes.


Corona discharge

corona discharge)

  • 10-14 A10-6A


Corona discharge1

corona discharge)

  • (Townsend)


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  • 104Hz106Hz(Trichel)1938


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Spark discharge

spark discharge


Brush discharge

brush discharge


Brush discharge1

brush discharge

  • 4mJ


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  • (Lichtenberg)

  • 2.710-4 C/m22.710-5C/m28mm


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ESD


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HBM

  • C=100pF, R1500


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HBM

A real case of human-body-model (HBM) ESD stress on a packaged IC.


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HBM

A real case of human-body-model (HBM) ESD stress on a packaged IC.


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HBM


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HBM

The equivalent circuit of the HBM ESD event with R1= 1500ohm and C1= 100pF.


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HBM

MIL-STD-883E

GBJ128A-97

GBJ548A-96


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HBM

MIL-STD-883E

GBJ128A-97

GBJ548A-96


Iec61340 3 1

IEC61340-3-1

Methods for simulation of electrostatic effect

Human body model (HBM)

Component testing


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IEC61340-3-1

Typical current waveform through a shorting wire ( tr )

IEC61340-3-1


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IEC61340-3-1

Typical current waveform through a shorting wire ( td )

IEC61340-3-1


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IEC61340-3-1

Typical current waveform through a 500 resistor

IEC61340-3-1


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IEC61340-3-1

Typical current waveform through a 500 resistor

IEC61340-3-1


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(V)

0

<250

1A

250~<500

1B

500~<1000

1C

1000~<2000

2

2000~<4000

3A

4000~<8000

3B

8000

HBM ESDS


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MM

Machine ModelMM

200pF


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BMM)


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BMM)

  • --

  • ESD

  • ,

  • --

  • --


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BMM)


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CDM

CDM1974Speakman


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ESDIBMESDESD--ESDESDESDESD


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ESD


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ESDESDESD1GHz


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ESDESD

ESD


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ESDESD


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    • 1ns20ns

    • 30%

    • ESDESD


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ESDESD


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  • ESDIEC61340-3-1ECMA/40


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-NSG435

NSG435 ESD SCHAFFNERESDNSG435 ESD


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-NSG435

  • 150pF330BMM

  • 150pF15

  • 180pF330

    ANSI-C63.161991--


Ess 200ax

ESS-200AX

  • ESS-200AX ESDNoiseken

  • 30kVIECISO/SAEESD25kV


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ESD3000


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ESD3000

EMC PARTNER offers a new hand-held ESD test system for contact discharge (CD) up to 30 kV and air discharge (AD) up to 32 kV


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ESD

ESD/

ESDESD


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ESD

ESD

FDTD


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ESD

FDTD


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ESD

  • ESD

    • ESD

    • ESD


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A(z, r,)

Z

R1

R

dl

R2

z

z=0

mirror

Dipole model

ESD

P.F.Wilson

ESDP. F. Wilson 1991ESDESDESD


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ESD

ESD


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1

2

3

4

5


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  • ESD EMP


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  • 30, 20003, ,


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ESD

  • ESD (electrostatic discharge) phenomenon can happen according to the different electrostatic potentials between two or more objects.

  • EOS (electrical overstress) is taken place by the electrical event that is outside the specified range of the DUT (device under test).

  • Devices are usually damaged by EOS/ESD via the rapidly generated heat or the rapidly created strong electrical field. The latent or fatal failures on a silicon chip are possibly caused by even an electrostatic discharge or electrical overstress event. To predict the ESD immunity level, or to find the ESD sensitive (weak) point of the DUT, there are several organizations who make the ESD related primary standards.


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ESD

  • ESDA (Electrostatic Discharge Association),

  • AEC(Automotive Electronics Council),

  • EIA/JEDEC (Electronic Industries Alliance / Joint Electron Device Engineering Council)

  • MIL-STD (US Military Standard).

  • IEC (International Electrotechnical Commission)


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ESD

  • HBM (Human Body Model)

  • BMM(Body-Metal Model

  • MM (Machine Model)

  • CDM(non-socketed Charged-Device Model, Field Induced Model, or Direct Charge Model)

  • SDM (Socket Device Model, or Socketed Discharge Model).


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EMC

1991Electromagnetic Environment EffectE3


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LEMP

(Lightning electromagnetic pulse ,LEMP) ,


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LEMP

  • LEMP

  • LEMP

  • LEMP


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LEMP


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1

2

3


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1


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  • 3

  • 1/3 1/6


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2


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  • 1kHz-5MHz

  • 34

  • 0.2s40ms


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0-20kHz100Hz-1000kHz(0-100Hz)2.3%25-100MHz60-70MHz


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30


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300-400


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9514kA,50%30kA,5%80kA;1030kA,200kA


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C2, R1, C1 , R2,

C1C2,

R1

R2

C1S


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T18s20

T220s20

(8 s)(20 s)(2kA ) IEC61000-4-5 (8/20 s) T 1T 2 IEC61000-4-5 3% 10%


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GTEMMarx

MarxGTEM


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LEMPIEC61000-4-9

20 kA/m

() GB/T 17626.52IEC61000-4-5 8/20s () .


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150 kV/m


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:

1()

2

3,


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:

1

2

3


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,


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1011V/m/s/

50/


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2.8103A /m/s0.1mT0.5mT

MIL-STD-46410m


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NEMP

NEMPEMREMR10kV/m100kmkmNEMP


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NEMP


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NEMP


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1.52MeV


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:

:


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2km12


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30km

515km107s/m


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30km


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  • 104105Vm10mT10-8s

  • MHz

  • , 0.3ll021107

  • 38km


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1962784001300


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:


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4

1

2

3

4


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/


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10/


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HEMPEMPEMPEMP


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1962714018001300

20


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0.010.03ss

EMPEMPEMP


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  • 12


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