Section 10 layout
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Section 10: Layout. Layout Design Rules. (1) Absolute-Value Design Rules * Use absolute distances (2)  -based Design Rules. 2. Metal-Si Contact Hole. (same rule for Metal-poly). Min. contact hole = 2  x 2 . Min contact hole to diffusion layer distance = . . Al. SiO 2. SiO 2.

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Section 10: Layout

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Section 10 layout

Section 10: Layout

EE143 –Ali Javey


Layout design rules

Layout Design Rules

(1) Absolute-Value Design Rules

* Use absolute distances

(2)  -based Design Rules

EE143 –Ali Javey

2


Metal si contact hole

Metal-Si Contact Hole

(same rule for Metal-poly)

Min. contact hole = 2  x 2 

Min contact hole to diffusion

layer distance = 

Al

SiO2

SiO2

n+

n+

p-sub

p-sub

EE143 –Ali Javey


Metal lines

Metal Lines

Line

1

Min width = 2

Min. metal-metal

spacing = 3

Line

2

[Rationale]

metal runs

on rough

topography

3  spacing to ensure no shorting between the 2 lines.

EE143 –Ali Javey


M1 contact overlap

M1-Contact Overlap

Min overlap of contact hole = 

Etching

problem

CVD SiO2

deposition.

problem in

narrow gap

SiO2

  • Si

EE143 –Ali Javey


Poly si gate

Poly-Si Gate

Min gate-overlap of

field oxide =

Avoid n+ channel formation during S/D Implant

n+

n+

n+

ideal

With overlay error

EE143 –Ali Javey


Gate contacting

Gate contacting

Comment:

Al to poly contact

should not be directly on top

of gate oxide area

Al

Poly gate

Gate oxide

Si

Al

Al

~400OC

Al

spike

Poly

Poly

SiO2

SiO2

Si

Si

EE143 –Ali Javey


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