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Research in NoMaD: Nanoelectronic Materials & Devices Research Group. Jonathan P. Bird Department of Electrical Engineering University at Buffalo Buffalo, NY 14260, USA. Presentation Overview. Today I will give an overview of some of the research in my group in the area of nanoelectronics.
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Research in NoMaD:Nanoelectronic Materials & Devices Research Group Jonathan P. Bird Department of Electrical Engineering University at BuffaloBuffalo, NY 14260, USA
Presentation Overview Today I will give an overview of some of the research in my group in the area of nanoelectronics Nanoelectronics … Although the term nanotechnology is generally defined as utilizing technology less than 100 nm in size, nanoelectronics often refers to transistor devices that are so small that inter-atomic interactions & quantum mechanical properties need to be studied extensively … source: Wikipedia
NoMaD Research in Nanoelectronics: Main Themes NanoscaleQuantum Transport Phenomena Spontaneous Spin Polarization in 1D Wires Transient Transport Phenomena in Nanodevices Prototype Device DevelopmentNanoscale Terahertz SensorsReprogrammable Hybrid Nanomagnetic Devices Characterization of New NanomaterialsMetallic Nanowires, Carbon NanotubesFocused-Beam Nanofabrication Techniques
NanoscaleQuantum Phenomena: Spin Readout With Nanowires SpinDetector Trapped Spin INPUT Pulse 500 nm All-Electrical Preparation &Readout of Trapped Single Spin! OUTPUTPulse Science 303, 1621 (2004) Phys. Rev. Lett. 92, 096802(2004) Phys. Rev. Lett. 99, 136805 (2007)
Prototype Device Development: Nanoscale Terahertz Sensors Appl. Phys. Lett. 92, 223115 (2008)
Characterization of New Nanomaterials: Metallic Nanowires Magneto-Resistance Hysteresis: Surface Magnetism? Appl. Phys. Lett. 85, 281 (2004) Phys. Rev. B 76, 184404 (2007)
Nanomagnetoelectronics • The marriage of ferromagnetic materials with semiconductor devices offers manypotential advantages: • Integration of logic and memory schemes within the framework of a single hardware • Fast non-volatile memories based on the switching of single magnetic domains • Reduced power dissipation associated with the storage of non- volatile memory in magnetic form Semiconductor approaches lagging far behind metal-based technology
Nanomagnetoelectronics: Mag-FET for Integrated Logic & Memory • We are exploring the implementation of a Ferro-FET that adds non-volatile memory capability to the logic functionality of FETs • This is achieved by using a nanoscale ferromagnet as the gate and manipulating its magnetic fringe fields to control the current
Nanomagnetoelectronics: Mag-FET for Integrated Logic & Memory Hysteretic MR that is strongly enhanced in the threshold regime!
Nanomagnetoelectronics: Mag-FET for Integrated Logic & Memory • In spite of the promise of these results, there are many issues that must be overcome in order to implement the Ferro-FET as a viable technology Operation temperature must be increased above 300 K Amplitude of tunneling magneto-resistance must be increased Convenient means to switch the gate magnetization is needed … • Solution of these problems could provide new advances however in the field of reprogrammable electronics
