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A Pageable Defect Tolerant Nanoscale Memory System

A Pageable Defect Tolerant Nanoscale Memory System. Susmit Biswas, Tzvetan S. Metodi, Frederic T. Chong, Ryan Kastner susmit@cs.ucsb.edu. Problem Statement. In a nanoscale memory system with high manufacturing defect rate , we aim to find a scheme with low static and dynamic overhead

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A Pageable Defect Tolerant Nanoscale Memory System

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  1. A Pageable Defect Tolerant Nanoscale Memory System Susmit Biswas, Tzvetan S. Metodi, Frederic T. Chong, Ryan Kastner susmit@cs.ucsb.edu Susmit Biswas

  2. Problem Statement • In a nanoscale memory system with high manufacturing defect rate, we aim to find a scheme with low static and dynamic overhead to identify and avoid the use of defective blocks and make usable memory in the granularity of 4-KByte size pages. Susmit Biswas

  3. Is it a significant problem? • Manufacturing defect • 10 – 30% using Self-assembly • DNA computing • Low yield • Yield decreases with block size Susmit Biswas

  4. Is it a significant problem? Susmit Biswas

  5. Critical Factors • Static Overhead • Bad block information • Dynamic Overhead • Reading and writing latency Susmit Biswas

  6. ECC Overhead source: Likharev07 Susmit Biswas

  7. Contribution • Analytical model • Defect tolerance technique • ECC, defect map, sparing • Study on area benefit • Fixed size block or variable size? Susmit Biswas

  8. Prior Work • Error Correcting Codes [Jeffery04] [Ou04] • Reconfiguration using Defect Map [Tahoori05][Wang06][DeHon05][Likharev-JETC07] • Built-in-self-Repair (BISR) [Bhavsar-ITC99][Schöber-ITC01][Nicolaidis-JET05] • Combination of schemes [Sun06] [Likharev-JETC07][Biswas-ICCAD07] Susmit Biswas

  9. Technique • Benefit from all • Error Correcting Code (BCH) • Strength of code • Defect Map • Level of map • Spare Block • Amount of sparing Susmit Biswas

  10. Technique • Store the defect map in unreliable memory Reconfiguration Map Defect Map Susmit Biswas

  11. Defect Map 101 111 101 Majority Voter 101 Technique • Majority voting to provide correctness Susmit Biswas

  12. System Architecture Data Defect Map Spare Map Metadata Susmit Biswas

  13. Pros and Cons • Pros • Locality of data and metadata • Low static overhead • High yield • Can be pipelined • Support for virtual memory system • Cons • 2s + 1 memory block read • Locality reduces overhead Susmit Biswas

  14. Results: Storage Efficiency Susmit Biswas

  15. Results: Static Overhead Susmit Biswas

  16. Fixed vs. Variable Block Susmit Biswas

  17. Summary • Defect tolerance technique • Combination of static and dynamic scheme • Encoding defect-map with data • Locality of data • Low static overhead • High yield • Higher yield using variable sized page • Static overhead increases Susmit Biswas

  18. Future Work • Efficient BCH module design • Interconnect reliability by redundancy • Cache design using unreliable memory Susmit Biswas

  19. Thanks ! Contact: Susmit Biswas Arch Lab, Department of Computer Science University of California at Santa Barbara susmit@cs.ucsb.edu Online version available at: http://cs.ucsb.edu/~susmit/papers/nanoarch07_nanomemory.pdf Susmit Biswas

  20. References • [Sun06] F. Sun and T. Zhang. “Two Fault Tolerance Design Approaches for Hybrid CMOS/Nanodevice Digital Memories”. Nanoarch 2006 • [Wang06] G. Wang, W. Gong, and R. Kastner. “Defect-Tolerant Nanocomputing Using Bloom Filters”. ICCAD 2006 • [DeHon05] A. DeHon and K. K. Likharev. “Hybrid CMOS /Nanoelectronic Digital Circuits: Devices, Architectures, and Design Automation”. ICCAD '05 • [Tahoori05] M. B. Tahoori. “A Mapping Algorithm for Defect-Tolerance of Recongurable Nano-Architectures”.ICCAD ’05 Susmit Biswas

  21. References • [Likharev07] D. Strukov and K. Likharev, “Defect-Tolerant Architectures for Nanoelectric Crossbar Memories”.Journal of Nanoscience and Nanotechnology, January 2007 • [Jeffery04] C. M. Jeffery, A. Basagalar, and R. J. O. Figueiredo, “Dynamic Sparing and Error Correction Techniques for Fault Tolerance in Nanoscale Memory Structures”.4th IEEE Conference on Nanotechnology 2004. • [Ou04] E. Ou and W. Yang, “Fast Error-Correcting Circuits for Fault-Tolerant Memory”, MTDT, pages 8 - 12, 2004. Susmit Biswas

  22. Reference • [Ramón05] Ramón Compaňó, “Trends in nanoelectronics”, Journal of Nanotechnology 12, 2001 • [Biswas-ICCAD07] Susmit Biswas, Gang Wang, Tzvetan S. Metodi, Frederic T. Chong, Ryan Kastner,“Combining Static and Dynamic Defect-Tolerance Techniques for Nanoscale Memory Systems”, to appear in ICCAD 07 Susmit Biswas

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